SLPS482B December 2013 – January 2015 CSD19533KCS
PRODUCTION DATA.
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This 100 V, 8.7 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V | |
Qg | Gate Charge Total (10 V) | 27 | nC | |
Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 6 V | 9.7 | mΩ |
VGS = 10 V | 8.7 | mΩ | ||
VGS(th) | Threshold Voltage | 2.8 | V |
Device | Package | Media | Qty | Ship |
---|---|---|---|---|
CSD19533KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 86 | ||
Continuous Drain Current (Silicon limited), TC = 100°C | 61 | ||
IDM | Pulsed Drain Current (1) | 207 | A |
PD | Power Dissipation | 188 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 175 | °C |
EAS | Avalanche Energy, single pulse ID = 46 A, L = 0.1 mH, RG = 25 Ω |
106 | mJ |
RDS(on) vs VGS |
Gate Charge |