1 Features

• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
  • Device Temperature Grade 1:
    –40°C to 125°C Ambient Operating Temperature Range
  • Device HBM ESD Classification Level 2
  • Device CDM ESD Classification Level C5
• Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
• Maximum Boot Voltage: 120 V
• Maximum V_DD Voltage: 20 V
• On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
• Greater than 1 MHz of Operation
• 20-ns Propagation Delay Times
• 3-A Sink, 3-A Source Output Currents
• 8-ns Rise and 7-ns Fall Time With 1000-pF Load
• 1-ns Delay Matching
• Specified from –40°C to 140°C (Junction Temperature)

2 Applications

• Power Supplies for Telecom, Datacom, and Merchant Markets
• Half-Bridge Applications and Full-Bridge Converters
• Isolated Bus Architecture
• Two-Switch Forward Converters
• Active-Clamp Forward Converters
• High-Voltage Synchronous-Buck Converters
• Class-D Audio Amplifiers

3 Description

The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.

Both devices are offered in the 8-pin SO PowerPAD™ (DDA) package.

1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application Diagram