SBAS550C June   2011  – May 2015 ADS4229

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: ADS4229 (250 MSPS)
    6. 7.6  Electrical Characteristics: General
    7. 7.7  Digital Characteristics
    8. 7.8  LVDS and CMOS Modes Timing Requirements
    9. 7.9  LVDS Timings at Lower Sampling Frequencies
    10. 7.10 CMOS Timings at Lower Sampling Frequencies
    11. 7.11 Serial Interface Timing Characteristics
    12. 7.12 Reset Timing (Only when Serial Interface is Used)
    13. 7.13 Typical Characteristics
      1. 7.13.1 Typical Characteristics: ADS4229
      2. 7.13.2 Typical Characteristics: Contour
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Digital Functions
      2. 8.3.2 Gain for SFDR/SNR Trade-off
      3. 8.3.3 Offset Correction
      4. 8.3.4 Power-Down
        1. 8.3.4.1 Global Power-Down
        2. 8.3.4.2 Channel Standby
        3. 8.3.4.3 Input Clock Stop
      5. 8.3.5 Output Data Format
    4. 8.4 Device Functional Modes
      1. 8.4.1 Output Interface Modes
        1. 8.4.1.1 Output Interface
        2. 8.4.1.2 DDR LVDS Outputs
        3. 8.4.1.3 LVDS Buffer
        4. 8.4.1.4 Parallel CMOS Interface
        5. 8.4.1.5 CMOS Interface Power Dissipation
        6. 8.4.1.6 Multiplexed Mode of Operation
    5. 8.5 Programming
      1. 8.5.1 Device Configuration
      2. 8.5.2 Parallel Configuration Only
      3. 8.5.3 Serial Interface Configuration Only
      4. 8.5.4 Using Both Serial Interface and Parallel Controls
      5. 8.5.5 Parallel Configuration Details
      6. 8.5.6 Serial Interface Details
        1. 8.5.6.1 Register Initialization
        2. 8.5.6.2 Serial Register Readout
    6. 8.6 Register Maps
      1. 8.6.1 Serial Register Map
      2. 8.6.2 Description of Serial Registers
        1. 8.6.2.1  Register Address 00h (Default = 00h)
        2. 8.6.2.2  Register Address 01h (Default = 00h)
        3. 8.6.2.3  Register Address 03h (Default = 00h)
        4. 8.6.2.4  Register Address 25h (Default = 00h)
        5. 8.6.2.5  Register Address 29h (Default = 00h)
        6. 8.6.2.6  Register Address 2Bh (Default = 00h)
        7. 8.6.2.7  Register Address 3Dh (Default = 00h)
        8. 8.6.2.8  Register Address 3Fh (Default = 00h)
        9. 8.6.2.9  Register Address 40h (Default = 00h)
        10. 8.6.2.10 Register Address 41h (Default = 00h)
        11. 8.6.2.11 Register Address 42h (Default = 00h)
        12. 8.6.2.12 Register Address 45h (Default = 00h)
        13. 8.6.2.13 Register Address 4Ah (Default = 00h)
        14. 8.6.2.14 Register Address 58h (Default = 00h)
        15. 8.6.2.15 Register Address BFh (Default = 00h)
        16. 8.6.2.16 Register Address C1h (Default = 00h)
        17. 8.6.2.17 Register Address CFh (Default = 00h)
        18. 8.6.2.18 Register Address EFh (Default = 00h)
        19. 8.6.2.19 Register Address F1h (Default = 00h)
        20. 8.6.2.20 Register Address F2h (Default = 00h)
        21. 8.6.2.21 Register Address 2h (Default = 00h)
        22. 8.6.2.22 Register Address D5h (Default = 00h)
        23. 8.6.2.23 Register Address D7h (Default = 00h)
        24. 8.6.2.24 Register Address DBh (Default = 00h)
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Theory of Operation
      2. 9.1.2 Analog Input
        1. 9.1.2.1 Drive Circuit Requirements
        2. 9.1.2.2 Driving Circuit
      3. 9.1.3 Clock Input
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Analog Input
        2. 9.2.2.2 Common Mode Voltage Output (VCM)
        3. 9.2.2.3 Clock Driver
        4. 9.2.2.4 Digital Interface
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Sharing DRVDD and AVDD Supplies
    2. 10.2 Using DC/DC Power Supplies
    3. 10.3 Power Supply Bypassing
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Grounding
      2. 11.1.2 Exposed Pad
      3. 11.1.3 Routing Analog Inputs
      4. 11.1.4 Routing Digital Outputs
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Definition of Specifications
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Device Support

12.1.1 Development Support

12.1.1.1 Definition of Specifications

Analog Bandwidth – The analog input frequency at which the power of the fundamental is reduced by 3 dB with respect to the low-frequency value.

Aperture Delay – The delay in time between the rising edge of the input sampling clock and the actual time at which the sampling occurs. This delay is different across channels. The maximum variation is specified as aperture delay variation (channel-to-channel).

Aperture Uncertainty (Jitter) – The sample-to-sample variation in aperture delay.

Clock Pulse Width/Duty Cycle – The duty cycle of a clock signal is the ratio of the time the clock signal remains at a logic high (clock pulse width) to the period of the clock signal. Duty cycle is typically expressed as a percentage. A perfect differential sine-wave clock results in a 50% duty cycle.

Maximum Conversion Rate – The maximum sampling rate at which specified operation is given. All parametric testing is performed at this sampling rate unless otherwise noted.

Minimum Conversion Rate – The minimum sampling rate at which the ADC functions.

Differential Nonlinearity (DNL) – An ideal ADC exhibits code transitions at analog input values spaced exactly 1LSB apart. The DNL is the deviation of any single step from this ideal value, measured in units of LSBs.

Integral Nonlinearity (INL) – The INL is the deviation of the ADC transfer function from a best fit line determined by a least squares curve fit of that transfer function, measured in units of LSBs.

Gain Error – Gain error is the deviation of the ADC actual input full-scale range from its ideal value. The gain error is given as a percentage of the ideal input full-scale range. Gain error has two components: error as a result of reference inaccuracy (EGREF) and error as a result of the channel (EGCHAN). Both errors are specified independently as EGREF and EGCHAN.

To a first-order approximation, the total gain error is ETOTAL ~ EGREF + EGCHAN.

For example, if ETOTAL = ±0.5%, the full-scale input varies from (1 – 0.5/100) x FSideal to (1 + 0.5/100) x FSideal.

Offset Error – The offset error is the difference, given in number of LSBs, between the ADC actual average idle channel output code and the ideal average idle channel output code. This quantity is often mapped into millivolts.

Temperature Drift – The temperature drift coefficient (with respect to gain error and offset error) specifies the change per degree Celsius of the parameter from TMIN to TMAX. It is calculated by dividing the maximum deviation of the parameter across the TMIN to TMAX range by the difference TMAX – TMIN.

Signal-to-Noise Ratio – SNR is the ratio of the power of the fundamental (PS) to the noise floor power (PN), excluding the power at dc and the first nine harmonics.

Equation 2. ADS4229 q_snr_las635.gif

SNR is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter full-scale range.

Signal-to-Noise and Distortion (SINAD) – SINAD is the ratio of the power of the fundamental (PS) to the power of all the other spectral components including noise (PN) and distortion (PD), but excluding dc.

Equation 3. ADS4229 q_sinad_las635.gif

SINAD is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter full-scale range.

Effective Number of Bits (ENOB) – ENOB is a measure of the converter performance as compared to the theoretical limit based on quantization noise.

Equation 4. ADS4229 q_enob_las635.gif

Total Harmonic Distortion (THD) – THD is the ratio of the power of the fundamental (PS) to the power of the first nine harmonics (PD).

Equation 5. ADS4229 q_thd_las635.gif

THD is typically given in units of dBc (dB to carrier).

Spurious-Free Dynamic Range (SFDR) – The ratio of the power of the fundamental to the highest other spectral component (either spur or harmonic). SFDR is typically given in units of dBc (dB to carrier).

Two-Tone Intermodulation Distortion – IMD3 is the ratio of the power of the fundamental (at frequencies f1 and f2) to the power of the worst spectral component at either frequency 2f1 – f2 or 2f2 – f1. IMD3 is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter full-scale range.

DC Power-Supply Rejection Ratio (DC PSRR) – DC PSSR is the ratio of the change in offset error to a change in analog supply voltage. The dc PSRR is typically given in units of mV/V.

AC Power-Supply Rejection Ratio (AC PSRR) – AC PSRR is the measure of rejection of variations in the supply voltage by the ADC. If ΔVSUP is the change in supply voltage and ΔVOUT is the resultant change of the ADC output code (referred to the input), then:

Equation 6. ADS4229 q_psrr_las635.gif

Voltage Overload Recovery – The number of clock cycles taken to recover to less than 1% error after an overload on the analog inputs. This is tested by separately applying a sine wave signal with 6 dB positive and negative overload. The deviation of the first few samples after the overload (from the expected values) is noted.

Common-Mode Rejection Ratio (CMRR) – CMRR is the measure of rejection of variation in the analog input common-mode by the ADC. If ΔVCM_IN is the change in the common-mode voltage of the input pins and ΔVOUT is the resulting change of the ADC output code (referred to the input), then:

Equation 7. ADS4229 q_cmrr_las635.gif

Crosstalk (only for multi-channel ADCs) – This is a measure of the internal coupling of a signal from an adjacent channel into the channel of interest. It is specified separately for coupling from the immediate neighboring channel (near-channel) and for coupling from channel across the package (far-channel). It is usually measured by applying a full-scale signal in the adjacent channel. Crosstalk is the ratio of the power of the coupling signal (as measured at the output of the channel of interest) to the power of the signal applied at the adjacent channel input. It is typically expressed in dBc.

12.2 Documentation Support

12.2.1 Related Documentation

For related documentation see the following:

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.6 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.