JAJSDZ7B March   2016  – October 2017

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Supply Current
    6. 6.6  Electrical Characteristics: Power Supply Control
    7. 6.7  Electrical Characteristics: AFE Power-On Reset
    8. 6.8  Electrical Characteristics: AFE Watchdog Reset and Wake Timer
    9. 6.9  Electrical Characteristics: Current Wake Comparator
    10. 6.10 Electrical Characteristics: VC1, VC2, VC3, VC4, BAT, PACK
    11. 6.11 Electrical Characteristics: SMBD, SMBC
    12. 6.12 Electrical Characteristics: PRES, BTP_INT, DISP
    13. 6.13 Electrical Characteristics: LEDCNTLA, LEDCNTLB, LEDCNTLC
    14. 6.14 Electrical Characteristics: Coulomb Counter
    15. 6.15 Electrical Characteristics: CC Digital Filter
    16. 6.16 Electrical Characteristics: ADC
    17. 6.17 Electrical Characteristics: ADC Digital Filter
    18. 6.18 Electrical Characteristics: CHG, DSG FET Drive
    19. 6.19 Electrical Characteristics: PCHG FET Drive
    20. 6.20 Electrical Characteristics: FUSE Drive
    21. 6.21 Electrical Characteristics: Internal Temperature Sensor
    22. 6.22 Electrical Characteristics: TS1, TS2, TS3, TS4
    23. 6.23 Electrical Characteristics: PTC, PTCEN
    24. 6.24 Electrical Characteristics: Internal 1.8-V LDO
    25. 6.25 Electrical Characteristics: High-Frequency Oscillator
    26. 6.26 Electrical Characteristics: Low-Frequency Oscillator
    27. 6.27 Electrical Characteristics: Voltage Reference 1
    28. 6.28 Electrical Characteristics: Voltage Reference 2
    29. 6.29 Electrical Characteristics: Instruction Flash
    30. 6.30 Electrical Characteristics: Data Flash
    31. 6.31 Electrical Characteristics: OCD, SCC, SCD1, SCD2 Current Protection Thresholds
    32. 6.32 Timing Requirements: OCD, SCC, SCD1, SCD2 Current Protection Timing
    33. 6.33 Timing Requirements: SMBus
    34. 6.34 Timing Requirements: SMBus XL
    35. 6.35 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Primary (1st Level) Safety Features
      2. 7.3.2  Secondary (2nd Level) Safety Features
      3. 7.3.3  Charge Control Features
      4. 7.3.4  Gas Gauging
      5. 7.3.5  Configuration
        1. 7.3.5.1 Oscillator Function
        2. 7.3.5.2 System Present Operation
        3. 7.3.5.3 Emergency Shutdown
        4. 7.3.5.4 1-Series, 2-Series, 3-Series, or 4-Series Cell Configuration
        5. 7.3.5.5 Cell Balancing
      6. 7.3.6  Battery Parameter Measurements
        1. 7.3.6.1 Charge and Discharge Counting
      7. 7.3.7  Battery Trip Point (BTP)
      8. 7.3.8  Lifetime Data Logging Features
      9. 7.3.9  Authentication
      10. 7.3.10 LED Display
      11. 7.3.11 Voltage
      12. 7.3.12 Current
      13. 7.3.13 Temperature
      14. 7.3.14 Communications
        1. 7.3.14.1 SMBus On and Off State
        2. 7.3.14.2 SBS Commands
    4. 7.4 Device Functional Modes
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 High-Current Path
          1. 8.2.2.1.1 Protection FETs
          2. 8.2.2.1.2 Chemical Fuse
          3. 8.2.2.1.3 Lithium-Ion Cell Connections
          4. 8.2.2.1.4 Sense Resistor
          5. 8.2.2.1.5 ESD Mitigation
        2. 8.2.2.2 Gas Gauge Circuit
          1. 8.2.2.2.1 Coulomb-Counting Interface
          2. 8.2.2.2.2 Power Supply Decoupling and PBI
          3. 8.2.2.2.3 System Present
          4. 8.2.2.2.4 SMBus Communication
          5. 8.2.2.2.5 FUSE Circuitry
        3. 8.2.2.3 Secondary-Current Protection
          1. 8.2.2.3.1 Cell and Battery Inputs
          2. 8.2.2.3.2 External Cell Balancing
          3. 8.2.2.3.3 PACK and FET Control
          4. 8.2.2.3.4 Temperature Output
          5. 8.2.2.3.5 LEDs
          6. 8.2.2.3.6 Safety PTC Thermistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Protector FET Bypass and Pack Terminal Bypass Capacitors
      2. 10.1.2 ESD Spark Gap
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 コミュニティ・リソース
    3. 11.3 商標
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

Over-operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage range, VCC BAT, VCC, PBI –0.3 30 V
Input voltage range, VIN PACK, SMBC, SMBD, PRES or SHUTDN, BTP_INT, DISP –0.3 30 V
TS1, TS2, TS3, TS4 –0.3 VREG + 0.3 V
PTC, PTCEN, LEDCNTLA, LEDCNTLB, LEDCNTLC –0.3 VBAT + 0.3 V
SRP, SRN –0.3 0.3 V
VC4 VC3 – 0.3 VC3 + 8.5 V, or VSS + 30 V
VC3 VC2 – 0.3 VC2 + 8.5 V, or VSS + 30 V
VC2 VC1 – 0.3 VC1 + 8.5 V, or VSS + 30 V
VC1 VSS – 0.3 VSS + 8.5 V, or VSS + 30 V V
Output voltage range, VO CHG, DSG –0.3 32
PCHG, FUSE –0.3 30 V
Maximum VSS current, ISS 50 mA
TSTG Storage temperature –65 150 °C
Lead temperature (soldering, 10 s), TSOLDER 300 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage BAT, VCC, PBI 2.2 26 V
VSHUTDOWN– Shutdown voltage VPACK < VSHUTDOWN– 1.8 2.0 2.2 V
VSHUTDOWN+ Start-up voltage VPACK > VSHUTDOWN– + VHYS 2.05 2.25 2.45 V
VHYS Shutdown voltage hysteresis VSHUTDOWN+ – VSHUTDOWN– 250 mV
VIN Input voltage range PACK, SMBC, SMBD, PRES, BTP_IN, DISP 26 V
TS1, TS2, TS3, TS4 VREG
PTC, PTCEN, LEDCNTLA, LEDCNTLB, LEDCNTLC VBAT
SRP, SRN –0.2 0.2
VC4 VVC3 VVC3 + 5
VC3 VVC2 VVC2 + 5
VC2 VVC1 VVC1 + 5
VC1 VVSS VVSS + 5
VO Output voltage range CHG, DSG, PCHG, FUSE 26 V
CPBI External PBI capacitor 2.2 µF
TOPR Operating temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) bq4050 UNIT
RSM (QFN)
32 PINS
RθJA, High K Junction-to-ambient thermal resistance 47.4 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 40.3 °C/W
RθJB Junction-to-board thermal resistance 14.7 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 14.4 °C/W
RθJC(bottom) Junction-to-case(bottom) thermal resistance 3.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: Supply Current

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 20 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INORMAL NORMAL mode CHG on. DSG on, no Flash write 336 µA
ISLEEP SLEEP mode CHG off, DSG on, no SBS communication 75 µA
CHG off, DSG off, no SBS communication 52
ISHUTDOWN SHUTDOWN mode 1.6 µA

6.6 Electrical Characteristics: Power Supply Control

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VSWITCHOVER– BAT to VCC switchover voltage VBAT < VSWITCHOVER– 1.95 2.1 2.2 V
VSWITCHOVER+ VCC to BAT switchover voltage VBAT > VSWITCHOVER– + VHYS 2.9 3.1 3.25 V
VHYS Switchover voltage hysteresis VSWITCHOVER+ – VSWITCHOVER– 1000 mV
ILKG Input Leakage current BAT pin, BAT = 0 V, VCC = 25 V, PACK = 25 V 1 µA
PACK pin, BAT = 25 V, VCC = 0 V, PACK = 0 V 1
BAT and PACK terminals, BAT = 0 V, VCC = 0 V, PACK = 0 V, PBI = 25 V 1
RPD Internal pulldown resistance PACK 30 40 50 kΩ

6.7 Electrical Characteristics: AFE Power-On Reset

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREGIT– Negative-going voltage input VREG 1.51 1.55 1.59 V
VHYS Power-on reset hysteresis VREGIT+ – VREGIT– 70 100 130 mV
tRST Power-on reset time 200 300 400 µs

6.8 Electrical Characteristics: AFE Watchdog Reset and Wake Timer

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tWDT AFE watchdog timeout tWDT = 500 372 500 628 ms
tWDT = 1000 744 1000 1256
tWDT = 2000 1488 2000 2512
tWDT = 4000 2976 4000 5024
tWAKE AFE wake timer tWAKE = 250 186 250 314 ms
tWAKE = 500 372 500 628
tWAKE = 1000 744 1000 1256
tWAKE = 512 1488 2000 2512
tFETOFF FET off delay after reset tFETOFF = 512 409 512 614 ms

6.9 Electrical Characteristics: Current Wake Comparator

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VWAKE Wake voltage threshold VWAKE = ±0.625 mV ±0.3 ±0.625 ±0.9 mV
VWAKE = ±1.25 mV ±0.6 ±1.25 ±1.8
VWAKE = ±2.5 mV ±1.2 ±2.5 ±3.6
VWAKE = ±5 mV ±2.4 ±5.0 ±7.2
VWAKE(DRIFT) Temperature drift of VWAKE accuracy 0.5% °C
tWAKE Time from application of current to wake interrupt 700 µs
tWAKE(SU) Wake comparator startup time 500 1000 µs

6.10 Electrical Characteristics: VC1, VC2, VC3, VC4, BAT, PACK

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
K Scaling factor VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3 0.1980 0.2000 0.2020 —
BAT–VSS, PACK–VSS 0.049 0.050 0.051
VREF2 0.490 0.500 0.510
VIN Input voltage range VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3 –0.2 5 V
BAT–VSS, PACK–VSS –0.2 20
ILKG Input leakage current VC1, VC2, VC3, VC4, cell balancing off, cell detach detection off, ADC multiplexer off 1 µA
RCB Internal cell balance resistance RDS(ON) for internal FET switch at 2 V < VDS < 4 V 200 Ω
ICD Internal cell detach check current VCx > VSS + 0.8 V 30 50 70 µA

6.11 Electrical Characteristics: SMBD, SMBC

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH Input voltage high SMBC, SMBD, VREG = 1.8 V 1.3 V
VIL Input voltage low SMBC, SMBD, VREG = 1.8 V 0.8 V
VOL Output low voltage SMBC, SMBD, VREG = 1.8 V, IOL = 1.5 mA 0.4 V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA
RPD Pulldown resistance 0.7 1.0 1.3 MΩ

6.12 Electrical Characteristics: PRES, BTP_INT, DISP

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input 1.3 V
VIL Low-level input 0.55 V
VOH Output voltage high VBAT > 5.5 V, IOH = –0 µA 3.5 V
VBAT > 5.5 V, IOH = –10 µA 1.8
VOL Output voltage low IOL = 1.5 mA 0.4 V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA
RO Output reverse resistance Between PRES or BTP_INT or DISP and PBI 8 kΩ

6.13 Electrical Characteristics: LEDCNTLA, LEDCNTLB, LEDCNTLC

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input 1.45 V
VIL Low-level input 0.55 V
VOH Output voltage high VBAT > 3.0 V, IOH = –22.5 mA VBAT – 1.6 V
VOL Output voltage low IOL = 1.5 mA 0.4 V
ISC High level output current protection –30 –45 –6 0 mA
IOL Low level output current VBAT > 3.0 V, VOH = 0.4 V 15.75 22.5 29.25 mA
ILEDCNTLx Current matching between LEDCNTLx VBAT = VLEDCNTLx + 2.5 V ±1%
CIN Input capacitance 20 pF
ILKG Input leakage current 1 µA
fLEDCNTLx Frequency of LED pattern 124 Hz

6.14 Electrical Characteristics: Coulomb Counter

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range –0.1 0.1 V
Full scale range –VREF1/10 VREF1/10 V
Integral nonlinearity(1) 16-bit, best fit over input voltage range ±5.2 ±22.3 LSB
Offset error 16-bit, Post-calibration ±5 ±10 µV
Offset error drift 15-bit + sign, Post-calibration 0.2 0.3 µV/°C
Gain error 15-bit + sign, over input voltage range ±0.2% ±0.8% FSR
Gain error drift 15-bit + sign, over input voltage range 150 PPM/°C
Effective input resistance 2.5 MΩ
(1) 1 LSB = VREF1/(10 × 2N) = 1.215/(10 × 215) = 3.71 µV

6.15 Electrical Characteristics: CC Digital Filter

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Conversion time Single conversion 250 ms
Effective resolution Single conversion 15 Bits

6.16 Electrical Characteristics: ADC

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range Internal reference (VREF1) –0.2 1 V
External reference (VREG) –0.2 0.8 × VREG
Full scale range VFS = VREF1 or VREG –VFS VFS V
Integral nonlinearity(1) 16-bit, best fit, –0.1 V to 0.8 × VREF1 ±6.6 LSB
16-bit, best fit, –0.2 V to –0.1 V ±13.1
Offset error(2) 16-bit, Post-calibration, VFS = VREF1 ±67 ±157 µV
Offset error drift 16-bit, Post-calibration, VFS = VREF1 0.6 3 µV/°C
Gain error 16-bit, –0.1 V to 0.8 × VFS ±0.2% ±0.8% FSR
Gain error drift 16-bit, –0.1 V to 0.8 × VFS 150 PPM/°C
Effective input resistance 8 MΩ
(1) 1 LSB = VREF1/(2N) = 1.225/(215) = 37.4 µV (when tCONV = 31.25 ms)
(2) For VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3, VC4–VSS, PACK–VSS, and VREF1/2, the offset error is multiplied by (1/ADC multiplexer scaling factor (K)).

6.17 Electrical Characteristics: ADC Digital Filter

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Conversion time Single conversion 31.25 ms
Single conversion 15.63
Single conversion 7.81
Single conversion 1.95
Resolution No missing codes 16 Bits
Effective resolution With sign, tCONV = 31.25 ms 14 15 Bits
With sign, tCONV = 15.63 ms 13 14
With sign, tCONV = 7.81 ms 11 12
With sign, tCONV = 1.95 ms 9 10

6.18 Electrical Characteristics: CHG, DSG FET Drive

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output voltage ratio RatioDSG = (VDSG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V, 10 MΩ between PACK and DSG 2.133 2.333 2.433 —
RatioCHG = (VCHG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V, 10 MΩ between BAT and CHG 2.133 2.333 2.433
V(FETON) Output voltage, CHG and DSG on VDSG(ON) = VDSG – VBAT, 4.92 V ≤ VBAT ≤ 18 V, 10 MΩ between PACK and DSG 10.5 11.5 12 V
VCHG(ON) = VCHG – VBAT, 4.92 V ≤ VBAT ≤ 18 V, 10 MΩ between BAT and CHG 10.5 11.5 12
V(FETOFF) Output voltage, CHG and DSG off VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and DSG –0.4 0.4 V
VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG –0.4 0.4
tR Rise time VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 200 500 µs
VCHG from 0% to 35% VCHG(ON)(TYP), VBAT ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 200 500
tF Fall time VDSG from VDSG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 40 300 µs
VCHG from VCHG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 40 200

6.19 Electrical Characteristics: PCHG FET Drive

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(FETON) Output voltage, PCHG on VPCHG(ON) = VVCC – VPCHG, 10 MΩ between VCC and PCHG 6 7 8 V
V(FETOFF) Output voltage, PCHG off VPCHG(OFF) = VVCC – VPCHG, 10 MΩ between VCC and PCHG –0.4 0.4 V
tR Rise time VPCHG from 10% to 90% VPCHG(ON)(TYP), VVCC ≥ 8 V, CL = 4.7 nF between PCHG and VCC, 5.1 kΩ between PCHG and CL, 10 MΩ between VCC and CHG 40 200 µs
tF Fall time VPCHG from 90% to 10% VPCHG(ON)(TYP), VCC ≥ 8 V, CL = 4.7 nF between PCHG and VCC, 5.1 kΩ between PCHG and CL, 10 MΩ between VCC and CHG 40 200 µs

6.20 Electrical Characteristics: FUSE Drive

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH Output voltage high VBAT ≥ 8 V, CL = 1 nF, IAFEFUSE = 0 µA 6 7 8.65 V
VBAT < 8 V, CL = 1 nF, IAFEFUSE = 0 µA VBAT – 0.1 VBAT
VIH High-level input 1.5 2.0 2.5 V
IAFEFUSE(PU) Internal pullup current VBAT ≥ 8 V, VAFEFUSE = VSS 150 330 nA
RAFEFUSE Output impedance 2 2.6 3.2 kΩ
CIN Input capacitance 5 pF
tDELAY Fuse trip detection delay 128 256 µs
tRISE Fuse output rise time VBAT ≥ 8 V, CL = 1 nF, VOH = 0 V to 5 V 5 20 µs

6.21 Electrical Characteristics: Internal Temperature Sensor

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VTEMP Internal temperature sensor voltage drift VTEMPP –1.9 –2.0 –2.1 mV/°C
VTEMPP – VTEMPN, assured by design 0.177 0.178 0.179

6.22 Electrical Characteristics: TS1, TS2, TS3, TS4

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range TS1, TS2, TS3, TS4, VBIAS = VREF1 –0.2 0.8 × VREF1 V
TS1, TS2, TS3, TS4, VBIAS = VREG –0.2 0.8 × VREG
RNTC(PU) Internal pullup resistance TS1, TS2, TS3, TS4 14.4 18 21.6 kΩ
RNTC(DRIFT) Resistance drift over temperature TS1, TS2, TS3, TS4 –360 –280 –200 PPM/°C

6.23 Electrical Characteristics: PTC, PTCEN

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RPTC(TRIP) PTC trip resistance 1.2 2.5 3.95 MΩ
VPTC(TRIP) PTC trip voltage VPTC(TRIP) = VPTCEN – VPTC 200 500 890 mV
IPTC Internal PTC current bias TA = –40°C to 110°C 200 290 350 nA
tPTC(DELAY) PTC delay time TA = –40°C to 110°C 40 80 145 ms

6.24 Electrical Characteristics: Internal 1.8-V LDO

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREG Regulator voltage 1.6 1.8 2.0 V
ΔVO(TEMP) Regulator output over temperature ΔVREG/ΔTA, IREG = 10 mA ±0.25%
ΔVO(LINE) Line regulation ΔVREG/ΔVBAT, VBAT = 10 mA –0 .6% 0.5%
ΔVO(LOAD) Load regulation ΔVREG/ΔIREG, IREG = 0 mA to 10 mA –1.5% 1.5%
IREG Regulator output current limit VREG = 0.9 × VREG(NOM), VIN > 2.2 V 20 mA
ISC Regulator short-circuit current limit VREG = 0 × VREG(NOM) 25 40 55 mA
PSRRREG Power supply rejection ratio ΔVBAT/ΔVREG, IREG = 10 mA ,VIN > 2.5 V, f = 10 Hz 40 dB
VSLEW Slew rate enhancement voltage threshold VREG 1.58 1.65 V

6.25 Electrical Characteristics: High-Frequency Oscillator

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fHFO Operating frequency 16.78 MHz
fHFO(ERR) Frequency error TA = –20°C to 70°C, includes frequency drift –2.5% ±0.25% 2.5%
TA = –40°C to 85°C, includes frequency drift –3.5% ±0.25% 3.5%
tHFO(SU) Start-up time TA = –20°C to 85°C, oscillator frequency within +/–3% of nominal 4 ms
oscillator frequency within +/–3% of nominal 100 µs

6.26 Electrical Characteristics: Low-Frequency Oscillator

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fLFO Operating frequency 262.144 kHz
fLFO(ERR) Frequency error TA = –20°C to 70°C, includes frequency drift –1.5% ±0.25% 1.5%
TA = –40°C to 85°C, includes frequency drift –2.5 ±0.25 2.5
fLFO(FAIL) Failure detection frequency 30 80 100 kHz

6.27 Electrical Characteristics: Voltage Reference 1

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF1 Internal reference voltage TA = 25°C, after trim 1.21 1.215 1.22 V
VREF1(DRIFT) Internal reference voltage drift TA = 0°C to 60°C, after trim ±50 PPM/°C
TA = –40°C to 85°C, after trim ±80

6.28 Electrical Characteristics: Voltage Reference 2

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF2 Internal reference voltage TA = 25°C, after trim 1.22 1.225 1.23 V
VREF2(DRIFT) Internal reference voltage drift TA = 0°C to 60°C, after trim ±50 PPM/°C
TA = –40°C to 85°C, after trim ±80

6.29 Electrical Characteristics: Instruction Flash

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write cycles 1000 Cycles
tPROGWORD Word programming time TA = –40°C to 85°C 40 µs
tMASSERASE Mass-erase time TA = –40°C to 85°C 40 ms
tPAGEERASE Page-erase time TA = –40°C to 85°C 40 ms
IFLASHREAD Flash-read current TA = –40°C to 85°C 2 mA
IFLASHWRITE Flash-write current TA = –40°C to 85°C 5 mA
IFLASHERASE Flash-erase current TA = –40°C to 85°C 15 mA

6.30 Electrical Characteristics: Data Flash

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Data retention 10 Years
Flash programming write cycles 20000 Cycles
tPROGWORD Word programming time TA = –40°C to 85°C 40 µs
tMASSERASE Mass-erase time TA = –40°C to 85°C 40 ms
tPAGEERASE Page-erase time TA = –40°C to 85°C 40 ms
IFLASHREAD Flash-read current TA = –40°C to 85°C 1 mA
IFLASHWRITE Flash-write current TA = –40°C to 85°C 5 mA
IFLASHERASE Flash-erase current TA = –40°C to 85°C 15 mA

6.31 Electrical Characteristics: OCD, SCC, SCD1, SCD2 Current Protection Thresholds

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOCD OCD detection threshold voltage range VOCD = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –16.6 –100 mV
VOCD = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –8.3 –50
ΔVOCD OCD detection threshold voltage program step VOCD = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –5.56 mV
VOCD = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –2.78
VSCC SCC detection threshold voltage range VSCC = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 44.4 200 mV
VSCC = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 22.2 100
ΔVSCC SCC detection threshold voltage program step VSCC = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 22.2 mV
VSCC = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 11.1
VSCD1 SCD1 detection threshold voltage range VSCD1 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –44.4 –200 mV
VSCD1 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –22.2 –100
ΔVSCD1 SCD1 detection threshold voltage program step VSCD1 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –22.2 mV
VSCD1 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –11.1
VSCD2 SCD2 detection threshold voltage range VSCD2 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –44.4 –200 mV
VSCD2 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –22.2 –100
ΔVSCD2 SCD2 detection threshold voltage program step VSCD2 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 1 –22.2 mV
VSCD2 = VSRP – VSRN, AFE PROTECTION CONTROL[RSNS] = 0 –11.1
VOFFSET OCD, SCC, and SCDx offset error Post-trim –2.5 2.5 mV
VSCALE OCD, SCC, and SCDx scale error No trim –10% 10%
Post-trim –5% 5%

6.32 Timing Requirements: OCD, SCC, SCD1, SCD2 Current Protection Timing

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN NOM MAX UNIT
tOCD OCD detection delay time 1 31 ms
ΔtOCD OCD detection delay time program step 2 ms
tSCC SCC detection delay time 0 915 µs
ΔtSCC SCC detection delay time program step 61 µs
tSCD1 SCD1 detection delay time AFE PROTECTION CONTROL[SCDDx2] = 0 0 915 µs
AFE PROTECTION CONTROL[SCDDx2] = 1 0 1850
ΔtSCD1 SCD1 detection delay time program step AFE PROTECTION CONTROL[SCDDx2] = 0 61 µs
AFE PROTECTION CONTROL[SCDDx2] = 1 121
tSCD2 SCD2 detection delay time AFE PROTECTION CONTROL[SCDDx2] = 0 0 458 µs
AFE PROTECTION CONTROL[SCDDx2] = 1 0 915
ΔtSCD2 SCD2 detection delay time program step AFE PROTECTION CONTROL[SCDDx2] = 0 30.5 µs
AFE PROTECTION CONTROL[SCDDx2] = 1 61
tDETECT Current fault detect time VSRP – VSRN = VT – 3 mV for OCD, SCD1, and SC2, VSRP – VSRN = VT + 3 mV for SCC 160 µs
tACC Current fault delay time accuracy Max delay setting –10% 10%

6.33 Timing Requirements: SMBus

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN NOM MAX UNIT
fSMB SMBus operating frequency SLAVE mode, SMBC 50% duty cycle 10 100 kHz
fMAS SMBus master clock frequency MASTER mode, no clock low slave extend 51.2 kHz
tBUF Bus free time between start and stop 4.7 µs
tHD(START) Hold time after (repeated) start 4.0 µs
tSU(START) Repeated start setup time 4.7 µs
tSU(STOP) Stop setup time 4.0 µs
tHD(DATA) Data hold time 300 ns
tSU(DATA) Data setup time 250 ns
tTIMEOUT Error signal detect time 25 35 ms
tLOW Clock low period 4.7 µs
tHIGH Clock high period 4.0 50 µs
tR Clock rise time 10% to 90% 1000 ns
tF Clock fall time 90% to 10% 300 ns
tLOW(SEXT) Cumulative clock low slave extend time 25 ms
tLOW(MEXT) Cumulative clock low master extend time 10 ms

6.34 Timing Requirements: SMBus XL

Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted)
MIN NOM MAX UNIT
fSMBXL SMBus XL operating frequency SLAVE mode 40 400 kHz
tBUF Bus free time between start and stop 4.7 µs
tHD(START) Hold time after (repeated) start 4.0 µs
tSU(START) Repeated start setup time 4.7 µs
tSU(STOP) Stop setup time 4.0 µs
tTIMEOUT Error signal detect time 5 20 ms
tLOW Clock low period 20 µs
tHIGH Clock high period 20 µs
bq4050 ParaMeasureInfo.gif Figure 4. SMBus Timing Diagram

6.35 Typical Characteristics

bq4050 C001_SLUSAS3.png
Figure 5. CC Offset Error vs. Temperature
bq4050 C006_SLUSAS3.png
Figure 7. Reference Voltage vs. Temperature
bq4050 C008_SLUSAS3.png
Figure 9. High-Frequency Oscillator vs. Temperature
bq4050 C010_SLUSAS3.png
Threshold setting is 88.85 mV.
Figure 11. Short Circuit Charge Protection Threshold vs. Temperature
bq4050 C012_SLUSAS3.png
Threshold setting is –177.7 mV.
Figure 13. Short Circuit Discharge 2 Protection Threshold vs. Temperature
bq4050 C014_SLUSAS3.png
Threshold setting is 465 µs.
Figure 15. Short Circuit Charge Current Delay Time vs. Temperature
bq4050 C016_SLUSAS3.png
Figure 17. VCELL Measurement at 2.5-V vs. Temperature
bq4050 C018_SLUSAS3.png
This is the VCELL average for single cell.
Figure 19. VCELL Measurement at 4.25-V vs. Temperature
bq4050 C003_SLUSAS3.gif
Figure 6. ADC Offset Error vs. Temperature
bq4050 C007_SLUSAS3.png
Figure 8. Low-Frequency Oscillator vs. Temperature
bq4050 C009_SLUSAS3.png
Threshold setting is –25 mV.
Figure 10. Overcurrent Discharge Protection Threshold vs. Temperature
bq4050 C011_SLUSAS3.png
Threshold setting is –88.85 mV.
Figure 12. Short Circuit Discharge 1 Protection Threshold vs. Temperature
bq4050 C013_SLUSAS3.png
Threshold setting is 11 ms.
Figure 14. Overcurrent Delay Time vs. Temperature
bq4050 C015_SLUSAS3.png
Threshold setting is 465 µs (including internal delay).
Figure 16. Short Circuit Discharge 1 Delay Time vs. Temperature
bq4050 C017_SLUSAS3.png
This is the VCELL average for single cell.
Figure 18. VCELL Measurement at 3.5-V vs. Temperature
bq4050 C019_SLUSAS3.png
ISET = 100 mA
Figure 20. I Measured vs. Temperature