SLOS580G May   2008  – March 2015 ISO15 , ISO35

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Simplified Schematics
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Dissipation Ratings
    6. 7.6  Supply Current
    7. 7.7  Driver Electrical Characteristics
    8. 7.8  Receiver Electrical Characteristics
    9. 7.9  Driver Switching Characteristics
    10. 7.10 Receiver Switching Characteristics
    11. 7.11 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagrams
    3. 9.3 Feature Description
      1. 9.3.1 Insulation and Safety-Related Package Characteristics
      2. 9.3.2 IEC 60664-1 Ratings Table
      3. 9.3.3 Regulatory Information
      4. 9.3.4 Safety-Limiting Values
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device I/O Schematics
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)

MAX MAX UNIT
VCC Input supply voltage. (2) VCC1, VCC2 –0.3 6 V
VO Voltage at any bus I/O terminal –9 14 V
VIT Voltage input, transient pulse, A, B, Y, and Z (through 100Ω, see Figure 13) –50 50 V
VI Voltage input at any D, DE or RE terminal –0.5 7 V
IO Receiver output current –10 10 mA
TJ Maximum junction temperature 170 °C
Tstg Storage temperature -65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) Bus pins and GND1 ±6000 V
Bus pins and GND2 ±16000
All pins ±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
Machine model ANSI/ESDS5.2-1996 ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC Supply Voltage, VCC1, VCC2 3.15 3.3 3.6 V
VOC Voltage at either bus I/O terminal A, B –7 12 V
VIH High-level input voltage D, DE, RE 2 VCC V
VIL Low-level input voltage 0 0.8
VID Differential input voltage A with respect to B –12 12 V
RL Differential input resistance 54 60 Ω
IO Output current Driver –60 60 mA
Receiver –8 8
1/tUI Signaling rate ISO15x and ISO35x 1 Mbps
TA Ambient temperature ISO15 and ISO35 –40 25 85 °C
ISO15M and ISO35M –55 25 125
TJ Operating junction temperature ISO15 and ISO35 –40 150 °C
ISO15M and ISO35M –55 150

7.4 Thermal Information

THERMAL METRIC(1) ISO15, ISO35 UNIT
DW (SOIC)
16 PINS
RθJA Junction-to-ambient thermal resistance High-K board 79.6 °C/W
Low-K board 168
RθJC(top) Junction-to-case (top) thermal resistance 39.7
RθJB Junction-to-board thermal resistance 44.6
ψJT Junction-to-top characterization parameter 11.8
ψJB Junction-to-board characterization parameter 44
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Dissipation Ratings

VALUE UNIT
PD Device Power Dissipation VCC1 = VCC2 = 3.6 V, TJ = 150°C, CL = 15 pF,
Input a 0.5 MHz 50% duty cycle square wave
220 mW

7.6 Supply Current

over recommended operating condition (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC1 Logic-side supply current ISO35x and ISO15x RE at 0 V or VCC, DE at 0 V, No load (driver disabled) 8 mA
RE at 0 V or VCC, DE at VCC, No Load (driver enabled) 8
ICC2 Bus-side supply current ISO35x and ISO15x RE at 0 V or VCC, DE at 0 V, No load (driver disabled) 15 mA
RE at 0 V or VCC, DE at VCC, No Load (driver enabled) 19

7.7 Driver Electrical Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
| VOD | Differential output voltage magnitude IO = 0 mA, no load 2.5 VCC V
RL = 54 Ω, See Figure 3 1.5 2
RL = 100 Ω (RS-422), See Figure 3 2 2.3
Vtest from –7 V to +12 V, See Figure 4 1.5
Δ|VOD| Change in magnitude of the differential output voltage See Figure 3 and Figure 4 –0.2 0 0.2 V
VOC(SS) Steady-state common-mode output voltage See Figure 5 1 2.6 3 V
ΔVOC(SS) Change in steady-state common-mode output voltage –0.1 0.1
VOC(pp) Peak-to-peak common-mode output voltage See Figure 5 0.5 V
II Input current D, DE, VI at 0 V or VCC1 –10 10 μA
IOZ High-impedance state output current ISO15 See receiver input current
ISO35 VY or VZ = 12 V Other input
at 0 V
90 μA
VY or VZ = 12 V, VCC = 0 90
VY or VZ = –7 V –10
VY or VZ = –7 V, VCC = 0 -10
IOS Short-circuit output current VA or VB at –7 V Other input
at 0 V
–250 250 mA
VA or VB at 12 V
COD Differential output capacitance VI = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V 16 pF
CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 14 and Figure 15 25 50 kV/μs

7.8 Receiver Electrical Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIT(+) Positive-going input threshold voltage IO = –8 mA –20 mV
VIT(–) Negative-going input threshold voltage IO = 8 mA –200 mV
Vhys Hysteresis voltage (VIT+ – VIT–) 50 mV
VO Output voltage VID = 200 mV, See Figure 9 IO = –8 mA 2.4 V
IO = 8 mA 0.4
IOZ High-impedance state output current VI = –7 to 12 V, Other input = 0 V –1 1 μA
IA or IB Bus input current -55oC ≤ TA ≤ 85oC VA or VB = 12 V Other input at 0 V 50 100 μA
VA or VB = 12 V, VCC = 0 50 100
85oC ≤ TA ≤ 125oC VA or VB = 12 V 200
VA or VB = 12 V, VCC = 0 200
-55oC ≤ TA ≤ 125oC VA or VB = –7 V –100 –40
VA or VB = –7 V, VCC = 0 –100 –30
IIH High-level input current, RE VIH = 2 V –10 μA
IIL Low-level input current, RE VIL = 0.8 V –10 μA
RID Differential input resistance A, B 48
CID Differential input capacitance VI = 0.4 sin (4E6πt) + 0.5V, DE at 0 V 16 pF

7.9 Driver Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay See Figure 6 340 ns
tsk(p) Pulse skew (|tPHL – tPLH|) 6
tr, tf Differential output signal rise time, fall time ISO15 and ISO35 120 180 300
ISO15M and ISO35M 120 180 350
tPHZ Propagation delay, high-level-to-high-impedance output See Figure 7 205 ns
tPZH Propagation delay, high-impedance-to-high-level output 530
tPLZ Propagation delay, low-level to high-impedance output See Figure 8 330 ns
tPZL Propagation delay, standby-to-low-level output 530

7.10 Receiver Switching Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH, tPHL Propagation delay ISO15x and ISO35x See Figure 10 100 ns
tsk(p) Pulse skew (|tPHL – tPLH|) ISO15 and ISO35 13
ISO15M and ISO35M 18
tr, tf Output signal rise and fall time ISO15 and ISO35 2 4
ISO15M and ISO35M 2 6
tPZH,
tPZL
Propagation delay, high-impedance-to-high-level output
Propagation delay, high-impedance-to-low-level output
DE at 0 V, See Figure 11 and Figure 12 13 25 ns
tPHZ,
tPLZ
Propagation delay, high-level-to-high-impedance output
Propagation delay, low-level to high-impedance output
13 25

7.11 Typical Characteristics

ISO15 ISO35 ISO15M ISO35M g1_slos580.gifFigure 1. ISOx5 Supply Current vs Data Rate With Load
ISO15 ISO35 ISO15M ISO35M g2_slos580.gifFigure 2. ISOx5 Supply Current vs Data Rate With No Load