SLVSC88B August   2013  – August  2015 UCC27517A-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Switching Characteristics
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD and Undervoltage Lockout
      2. 9.3.2 Operating Supply Current
      3. 9.3.3 Input Stage
      4. 9.3.4 Enable Function
      5. 9.3.5 Output Stage
      6. 9.3.6 Low Propagation Delays
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Input-to-Output Logic
        2. 10.2.2.2 Input Threshold Type
        3. 10.2.2.3 VDD Bias Supply Voltage
        4. 10.2.2.4 Peak Source and Sink Currents
        5. 10.2.2.5 Enable and Disable Runction
        6. 10.2.2.6 Propagation Delay
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
    4. 12.4 Power Dissipation
  13. 13Device and Documentation Support
    1. 13.1 Community Resources
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DBV|5
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise Immunity
  • Dual Input Design (choice of an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option

2 Applications

  • Automotive
  • Switch-Mode Power Supplies
  • DC-to-DC Converters
  • Companion Gate-Driver Devices for Digital-Power Controllers
  • Solar Power, Motor Control, UPS
  • Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

3 Description

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
UCC27517A-Q1 SOT-23 (5) 2.90 mm × 1.60 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Typical Applications Diagrams

UCC27517A-Q1 typ_apps_first_page_slvsc88.gif

4 Revision History

Changes from A Revision (September 2013) to B Revision

  • Added ESD Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. Go

Changes from * Revision (August 2013) to A Revision

  • Changed document status from Product Preview to Production DataGo