JAJSF22D July   2013  – March 2018 UCC28740

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション概略図
      2.      代表的なV-I図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Description
      2. 7.3.2 Valley-Switching and Valley-Skipping
      3. 7.3.3 Startup Operation
      4. 7.3.4 Fault Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Secondary-Side Optically Coupled Constant-Voltage (CV) Regulation
      2. 7.4.2 Primary-Side Constant-Current (CC) Regulation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Standby Power Estimate and No-Load Switching Frequency
        3. 8.2.2.3 Input Bulk Capacitance and Minimum Bulk Voltage
        4. 8.2.2.4 Transformer Turns-Ratio, Inductance, Primary Peak Current
        5. 8.2.2.5 Transformer Parameter Verification
        6. 8.2.2.6 VS Resistor Divider, Line Compensation
        7. 8.2.2.7 Output Capacitance
        8. 8.2.2.8 VDD Capacitance, CVDD
        9. 8.2.2.9 Feedback Network Biasing
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 VDD Pin
      2. 10.1.2 VS Pin
      3. 10.1.3 FB Pin
      4. 10.1.4 GND Pin
      5. 10.1.5 CS Pin
      6. 10.1.6 DRV Pin
      7. 10.1.7 HV Pin
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
        1. 11.1.1.1 WEBENCH®ツールによるカスタム設計
      2. 11.1.2 デバイスの項目表記
        1. 11.1.2.1  容量項(ファラッド単位)
        2. 11.1.2.2  デューティ・サイクル項
        3. 11.1.2.3  周波数項(ヘルツ単位)
        4. 11.1.2.4  電流項(アンペア単位)
        5. 11.1.2.5  電流および電圧のスケーリング項
        6. 11.1.2.6  変圧器の項
        7. 11.1.2.7  電力項(ワット単位)
        8. 11.1.2.8  抵抗項(オーム単位)
        9. 11.1.2.9  タイミング項(秒単位)
        10. 11.1.2.10 電圧項(ボルト単位)
        11. 11.1.2.11 AC電圧項(VRMS単位)
        12. 11.1.2.12 効率項
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.2.2.5 Transformer Parameter Verification

Because the selected transformer turns-ratio affects the MOSFET VDS and the secondary and auxiliary rectifier reverse voltages, a review of these voltages is important. In addition, internal timing constraints of the UCC28740 require a minimum on time of the MOSFET (tON) and a minimum demagnetization time (tDM) of the transformer in the high-line minimum-load condition. The selection of fMAX, LP, and RCS affects the minimum tON and tDM.

Equation 18 and Equation 19 determine the reverse voltage stresses on the secondary and auxiliary rectifiers. Stray inductance can impress additional voltage spikes upon these stresses and snubbers may be necessary.

Equation 18. UCC28740 q_Vrevs_lusbf3.gif
Equation 19. UCC28740 q_Vreva_lusbf3.gif

For the MOSFET VDS peak voltage stress, an estimated leakage inductance voltage spike (VLK) is included.

Equation 20. UCC28740 q_dp_Vdspk_lusb41.gif

Equation 21 determines if tON(min) exceeds the minimum tON target of 280 ns (maximum tCSLEB). Equation 22 verifies that tDM(min) exceeds the minimum tDM target of 1.2 µs.

Equation 21. UCC28740 q_tonmin_lusbf3.gif
Equation 22. UCC28740 q_tdmmin_lusbf3.gif