GaN FET gate drivers
High-speed GaN gate drivers enabling high power density and design simplicity for every power topology
TI’s portfolio of gate drivers tailor made for GaN are enabling new levels of high speed, power density, and efficiency in GaN designs. TI GaN drivers provide best-in-class propagation delay and matching for frequencies to 50MHz, better than 5% gate bias clamping to ensure reliable switching, and advanced features such as dead-time control and high slew rate immunity to 300V/ns. From single channel, half-bridge, to automotive qualified solutions, TI offers a GaN FET driver for every high performance application.
GaN FET driver products
Featured reference designs and EVM boards
1ns GaN laser drive stage for high resolution LiDAR applications.
Flexible GaN power stage for high efficiency designs up to 50MHz.
Learn how this 50MHz half-bridge GaN driver’s adjustable dead time control can be optimized to reduce system losses in high speed designs.
GaN technical articles