SLPS570 November   2015 CSD25404Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD25404Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DQG|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Low RDS(on)
  • Halogen Free
  • RoHS Compliant
  • Pb Free Terminal Plating
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This –20 V, 5.5 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

Top View
CSD25404Q3 p0100-01_lps211.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage –20 V
Qg Gate charge total (–4.5 V) 10.9 nC
Qgd Gate charge gate to drain 2.2 nC
RDS(on) Drain-to-source on resistance VGS = –1.8 V 40
VGS = –2.5 V 10.1
VGS = –4.5 V 5.5
Vth Threshold voltage –0.9 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD25404Q3 2500 13-Inch Reel SON 3.3 mm × 3.3 mm Plastic Package Tape and Reel
CSD25404Q3T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage –20 V
VGS Gate-to-source voltage ±12 V
ID Continuous drain current, TC = 25°C –104 A
Continuous drain current (package limit) –60
Continuous drain current(1) –18
IDM Pulsed drain current(2) –240 A
PD Power dissipation(1) 2.8 W
Power dissipation, TC = 25°C 96
TJ,
Tstg
Operating junction,
storage temperature
–55 to 150 °C
  1. RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4 PCB.
  2. Max RθJC = 1.3, pulse duration ≤100 µs, duty cycle ≤1%.

RDS(on) vs VGS

CSD25404Q3 D007_SLPS570.gif

Gate Charge

CSD25404Q3 D004_SLPS570_FP.gif