LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier | TIJ.co.jp

LF353-N
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Wide Bandwidth Dual JFET Input Operational Amplifier

Wide Bandwidth Dual JFET Input Operational Amplifier - LF353-N
データシート
 

推奨代替製品

  • LM8272  -  高帯域幅、高スルー・レート、低消費電力、RRIO
  • LMC6032  -  チャネルあたりの電源電流および入力バイアス電流の向上
  • LMC6082  -  帯域幅、スルー・レート、入力バイアス電流、オフセット電圧の向上
  • LMC662  -  帯域幅、スルー・レート、および最小電源電圧の向上
  • LMP7702  -  高精度、RRIO、低消費電力、高 CMRR
  • LF353  - このデバイスは、比較対象のデバイスの機能と同等ですが、ピン配列は同じでなく、パラメータも同一ではない可能性があります。   Designs can achieve better performance

概要

These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF353-N is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and LM358 designs.

These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The devices also exhibit low noise and offset voltage drift.

特長

  • Internally Trimmed Offset Voltage: 10 mV
  • Low Input Bias Current: 50pA
  • Low Input Noise Voltage: 25 nV/√Hz
  • Low Input Noise Current: 0.01 pA/√Hz
  • Wide Gain Bandwidth: 4 MHz
  • High Slew Rate: 13 V/μs
  • Low Supply Current: 3.6 mA
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion : ≤0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 μs

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機能一覧

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Part number オーダー・オプション Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
LF353-N ご注文 2     10     36     4     13     In to V+     10     1.8     16     Catalog     0 to 70     PDIP | 8
SOIC | 8    
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)    
10         200     100     20     FET