LMG1210 (開発中)

調整可能なデッドタイム機能搭載、200V, 1.5A/3A ハーフ・ブリッジ GaN ドライバ

調整可能なデッドタイム機能搭載、200V, 1.5A/3A ハーフ・ブリッジ GaN ドライバ - LMG1210
 

Sample Availability

Experimental samples are available (XLMG1210RVRT). Request now

概要

The LMG1210 is a 200-V, half-bridge high performance gallium nitride field effect transistor (GaN FET) driver designed for applications requiring high switching speed, minimized dead time, as well as high efficiency. Drive voltage is precisely controlled by an internal LDO to 5 V when higher auxiliary voltages are used.

The LMG1210 GaN driver is designed for ultra-high frequency applications and features adjustable dead-time capability, very small propagation delay, as well as 1.5-ns high-side low-side matching to optimize system efficiency.

Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses. An external bootstrap diode is used to charge the high-side bootstrap capacitor to allow optimal selection for the circuit operating conditions.

An internal switch turns the bootstrap diode off when the low side is not on, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge when a silicon diode is used as the bootstrap diode.

The GaN driver can operate in two different modes: independent input mode (IIM) and PWM mode. In the IIM each of the outputs is independently controller by a dedicated input. In PWM mode the two complementary output signals are generated from a single input, and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

特長

  • Ultra-High Speed Operation of 50 MHz
    • 10 ns Typical Propagation Delay
    • 1.5 ns High-Side to Low-Side Matching
    • Pulse Width ≥ 3 ns
  • 1.5-A Peak Source and 3.1-A Peak Sink Currents
  • Adjustable Dead-Time Control Feature
  • Highest Slew Rate Immunity in Industry of 300 V/ns
  • External Bootstrap Diode For Flexibility
  • High-Side to Low-Side Capacitance Less Than 1 pF
  • UVLO and Overtemperature Protection
  • Low-Inductance WQFN Package

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機能一覧 他の製品と比較 GaN FET ドライバ

 
Driver Configuration
Number of Channels (#)
Power Switch
Bus Voltage (V)
Peak Output Current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise Time (ns)
Fall Time (ns)
Prop Delay (ns)
Input Threshold
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
LMG1210 LM5113-Q1 LMG1020 LMG1205
Half Bridge    Half Bridge    Low Side    Half Bridge   
2    2    1    2   
MOSFET
GaNFET   
MOSFET
GaNFET   
MOSFET
GaNFET   
MOSFET
GaNFET   
200    90      90   
3    5    7    5   
6    4.5    4.75    4.5   
18    5.5    5.25    5.5   
0.5    7    0.21    7   
0.5    3.5    0.21    3.5   
10    30    2.5    35   
TTL    TTL    TTL    TTL   
Catalog    Automotive    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125   
WQFN    WSON    DSBGA    DSBGA   
19WQFN: 12 mm2: 4 x 3(WQFN)    See datasheet (WSON)    See datasheet (DSBGA)    See datasheet (DSBGA)