LMG3410 Spitfire - Smart GaN FET、内蔵ドライバおよび安全スイッチ付 - LMG3410

LMG3410 (開発中)

LMG3410 Spitfire - Smart GaN FET、内蔵ドライバおよび安全スイッチ付


More Information and Sample Availability

Experimental samples are available (XLMG3410RWHT). Order now

Realize the potential of GaN today with LMG3410 performance development kits (LMG3410-HB-EVM). Buy from TI


The LMG3410 Single-Channel Gallium-Nitride (GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by 8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device while providing the native switching performance of the GaN power transistor. When the LMG3410 is unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. In normal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device is gated directly from an internally-generated negative voltage supply.

The integrated driver provides additional protection and convenience features. Fast over-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safe system; the device’s status is indicated by the FAULT output. An internal 5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally, externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drain ringing, and electrical noise generation.


  • Integrated 70-mΩ, 600-V GaN and Driver
  • Single Package for Ease of Design and Layout
  • Up to 1 MHz Steady-State Operation
  • 20-ns Typical Propagation Delay
  • Operates From a Single Unregulated 12-V Supply
  • Externally-Adjustable Drive Strength for Switching Performance and EMI Control
    • Supports 25 to 100 V/ns
  • Integrated DC-DC Converter for Negative Drive Voltage
  • Fault Output Ensures Safety
    • UVLO Protection
    • Over-Current Protection
    • Over-Temperature Protection
  • High Edge-Rate Tolerance

All trademarks are the property of their respective owners.


機能一覧 他の製品と比較 GaN FET モジュール

VDS (Max) (V)
ID (Max) (A)
RDS (on) (Milliohm)
Coss (pF)
Logic Level
Prop Delay (ns)
Prop Delay Matching (ns)
PulseWidth Min (ns)
Control Method
LMG3410 LMG5200
Single-Channel Power Stage    Half Bridge Power Stage   
600    80   
12    10   
70    15   
71    266   
12    5   
3V to 5V CMOS and TTL    3V to 5V CMOS and TTL   
20    29.5   
External    External