TLV2316 TLVx316 10MHz、低ノイズ RRIO CMOS オペ・アンプ | TIJ.co.jp

TLV2316
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TLVx316 10MHz、低ノイズ RRIO CMOS オペ・アンプ

 

概要

The TLV316 (single), TLV2316 (dual), and TLV4316 (quad) devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current (400 µA/ch typical) combined with a wide bandwidth of 10 MHz, and very-low noise (12 nV/√Hz at 1 kHz) make this family attractive for a variety of applications that require a good balance between cost and performance. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances.

The robust design of the TLVx316 provides ease-of-use to the circuit designer–a unity-gain stable, integrated RFI/EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V). This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313 and TLVx314 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.

特長

  • Unity-Gain Bandwidth: 10 MHz
  • Low IQ: 400 µA/ch
    • Excellent Power-to-Bandwidth Ratio
    • Stable IQ Over Temperature and Supply Range
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 12 nV/√Hz at 1 kHz
  • Low Input Bias Current: ±10 pA
  • Offset Voltage: ±0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter
  • Extended Temperature Range: –40°C to +125°C

機能一覧

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Part number オーダー・オプション Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
TLV2316 ご注文 2     1.8     5.5     10     6     In
Out    
3     0.4     12     Catalog     -40 to 125     SOIC | 8
VSSOP | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
2     Cost Optimized
EMI Hardened    
90     50     CMOS    
TLV2314 ご注文 2     1.8     5.5     3     1.5     In
Out    
3     0.15     16     Catalog     -40 to 125     SOIC | 8
VSSOP | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
2     Cost Optimized
EMI Hardened    
96     20     CMOS    
TLV9002 ご注文 2     1.8     5.5     1     2     In
Out    
1.5     0.06     30     Catalog     -40 to 125     SOIC | 8
SOT-23-THIN | 8
TSSOP | 8
VSSOP | 10
VSSOP | 8
WSON | 8
X2QFN | 10    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8SOT-23-THIN: 8 mm2: 2.8 x 2.9 (SOT-23-THIN | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)
10VSSOP: 9 mm2: 3 x 3 (VSSOP | 10)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)
8WSON: 4 mm2: 2 x 2 (WSON | 8)
10X2QFN: 3 mm2: 2 x 1.5 (X2QFN | 10)    
0.6     Cost Optimized
EMI Hardened
Shutdown
Small Size    
90     40     CMOS    
TLV9052 ご注文 2     1.8     5.5     5     15     In
Out    
1.6     0.33     20     Catalog     -40 to 125     SOIC | 8
SOT-23-THIN | 8
TSSOP | 8
VSSOP | 10
VSSOP | 8
WSON | 8
X2QFN | 10    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8SOT-23-THIN: 8 mm2: 2.8 x 2.9 (SOT-23-THIN | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)
10VSSOP: 9 mm2: 3 x 3 (VSSOP | 10)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)
8WSON: 4 mm2: 2 x 2 (WSON | 8)
10X2QFN: 3 mm2: 2 x 1.5 (X2QFN | 10)    
0.5     Cost Optimized
EMI Hardened
Shutdown
Small Size    
96     50     CMOS    
TLV9062 ご注文 2     1.8     5.5     10