The TLV234x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike other products in this family designed primarily to meet aggressive power consumption specifications, the TLV234x was developed to offer ac performance approaching that of a BiFET operational amplifier while operating from a single-supply rail. At 3 V, the TLV234x has a typical slew rate of 2.1 V/us and 790-kHz unity-gain bandwidth.
Each amplifier is fully functional down to a minimum supply voltage of 2 V and is fully characterized, tested, and specified at both 3-V and 5-V power supplies over a temperature range of -40°C to 85°C. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors.
To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
LinCMOS is a trademark of Texas Instruments Incorporated.
Part number | オーダー・オプション | Number of channels (#) | Total supply voltage (Min) (+5V=5, +/-5V=10) | Total supply voltage (Max) (+5V=5, +/-5V=10) | GBW (Typ) (MHz) | Slew rate (Typ) (V/us) | Rail-to-rail | Vos (offset voltage @ 25 C) (Max) (mV) | Iq per channel (Typ) (mA) | Vn at 1 kHz (Typ) (nV/rtHz) | Rating | Operating temperature range (C) | Package Group | Package size: mm2:W x L (PKG) | Offset drift (Typ) (uV/C) | Features | Input bias current (Max) (pA) | CMRR (Typ) (dB) | Output current (Typ) (mA) | Architecture |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TLV2342 |
|
2 | 2 | 8 | 0.32 | 3.6 |
In to V-
Out |
9 | 0.7 | 25 | Catalog | -40 to 85 |
PDIP | 8
SOIC | 8 TSSOP | 8 |
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8) 8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8) |
2.7 | 200 | 80 | 9 | CMOS |