TLV4316 TLVx316 10MHz、低ノイズ RRIO CMOS オペ・アンプ | TIJ.co.jp

TLV4316
この製品はすでに市場にリリースされており、ご購入できます。 一部の製品は、より新しい代替品を使用できる可能性があります。
TLVx316 10MHz、低ノイズ RRIO CMOS オペ・アンプ

 

概要

The TLV316 (single), TLV2316 (dual), and TLV4316 (quad) devices comprise a family of general-purpose, low-power operational amplifiers. Features such as rail-to-rail input and output swings, low quiescent current (400 µA/ch typical) combined with a wide bandwidth of 10 MHz, and very-low noise (12 nV/√Hz at 1 kHz) make this family attractive for a variety of applications that require a good balance between cost and performance. The low input bias current supports operational amplifiers that are used in applications with megaohm source impedances.

The robust design of the TLVx316 provides ease-of-use to the circuit designer–a unity-gain stable, integrated RFI/EMI rejection filter, no phase reversal in overdrive condition, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V). This latest addition of low-voltage CMOS operational amplifiers to the portfolio, in conjunction with the TLVx313 and TLVx314 series, offer a family of bandwidth, noise, and power options to meet the needs of a wide variety of applications.

特長

  • Unity-Gain Bandwidth: 10 MHz
  • Low IQ: 400 µA/ch
    • Excellent Power-to-Bandwidth Ratio
    • Stable IQ Over Temperature and Supply Range
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 12 nV/√Hz at 1 kHz
  • Low Input Bias Current: ±10 pA
  • Offset Voltage: ±0.75 mV
  • Unity-Gain Stable
  • Internal RFI/EMI Filter
  • Extended Temperature Range: –40°C to +125°C

機能一覧

他の製品と比較 汎用オペアンプ メール Excelへダウンロード
Part number オーダー・オプション Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
TLV4316 ご注文 4     1.8     5.5     10     6     In
Out    
3     0.4     12     Catalog     -40 to 125     SOIC | 14
TSSOP | 14    
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)
14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)    
2     Cost Optimized
EMI Hardened    
  90     50     CMOS    
LM324LV ご注文 4     2.7     5.5     1     1.5     In to V-     3     0.09     40     Catalog     -40 to 125     SOIC | 14
TSSOP | 14    
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)
14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)    
4     Cost Optimized
EMI Hardened
Standard Amps    
    40     CMOS    
LMV604 ご注文 4     2.7     5.5     1     1     In to V-
Out    
5     0.107     39     Catalog     -40 to 125     SOIC | 14
TSSOP | 14    
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)
14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)    
1.9         200     86     75     CMOS    
TLV4313 ご注文 4     1.8     5.5     1     0.5     In
Out    
3     0.065     26     Catalog     -40 to 125     TSSOP | 14     14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)     2     Cost Optimized
EMI Hardened    
  85     15     CMOS    
TLV9004 ご注文 4     1.8     5.5     1     2     In
Out