JFET Input Operational Amplifiers - LF356

LF356 (供給中)

JFET Input Operational Amplifiers

 

推奨代替製品

  • LMV712-N  -  レール・ツー・レール入力および出力、シャットダウン

概要

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

特長

  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

詳細を表示

関連アプリケーション

  • Precision High-Speed Integrators
  • Fast D/A and A/D Converters
  • High Impedance Buffers
  • Wideband, Low Noise, Low Drift Amplifiers
  • Logarithmic Amplifiers
  • Photocell Amplifiers
  • Sample and Hold Circuits

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WEBENCH® Designer LF356

Amplifier Topology
 Non-inverting
 Inverting
Desired Power Supply Voltage
Positive Supply (Vcc):  V
Negative Supply (Vee):  V
Allowed Power Supply(Vcc-Vee) = 10.0 to 36.0 V
Desired Input and Output Requirements
  Min Max
Vin  V  V
Vout  V  V
Minimum Temperature = 0.0 °C
Maximum Temperature = 70.0 °C

機能一覧 他の製品と比較 オペアンプ

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Vos (Offset Voltage @ 25C) (Max) (mV)
Iq per channel (Typ) (mA)
Rating
Operating Temperature Range (C)
Package Group
Output Current (Typ) (mA)
Offset Drift (Typ) (uV/C)
Vn at 1kHz (Typ) (nV/rtHz)
Architecture
Additional Features
IIB (Max) (pA)
CMRR (Typ) (dB)
Package Size: mm2=WxL (PKG) (mm2=WxL)
LF356
1   
10   
36   
5   
12   
In to V+   
2   
5   
Military   
-40 to 85
0 to 70   
PDIP
SOIC
TO-99
WAFERSALE   
25   
3   
12   
FET   
Vos Adj Pin   
50   
100   
8SOIC: 19.159 mm2: 3.91 x 4.9
8PDIP: 62.2935 mm2: 6.35 x 9.81
8TO-99: 82.4464 mm2: 9.08 x 9.08