SiC と IGBT トランジスタ / 電源モジュール向け駆動機能と保護機能の評価ボード UCC21710QDWEVM-025 (供給中)
UCC21710QDWEVM-025 is a prototype evaluation module and is available in limited quantities.
UCC21710-Q1 full data sheet, EVM user's guide, and PSpice model are available. Request now
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2019年 4月 30日 （英語）
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The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC21710 in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with soft turn OFF and Miller clamp with internal FET
- Robust noise-immune solution with CMTI > 100 V/ns