SCDS238H March   2007  – August 2022 TS3A24159

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics for 3-V Supply
    6. 6.6  Electrical Characteristics for 2.5-V Supply
    7. 6.7  Electrical Characteristics for 1.8-V Supply
    8. 6.8  Switching Characteristics for a 3-V Supply
    9. 6.9  Switching Characteristics for a 2.5-V Supply
    10. 6.10 Switching Characteristics for a 1.8-V Supply
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Specified break-before-make switching
  • Low ON-state resistance (0.3 Ω maximum)
  • Low charge injection
  • Excellent ON-state resistance matching
  • Low total harmonic distortion (THD)
  • 1.65-V to 3.6-V single-supply operation
  • Control inputs are 1.8-V logic compatible
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)