SWRS109C May   2011  – December 2016 CC110L

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Diagram
    2. 3.2 Signal Descriptions
  4. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Handling Ratings
    3. 4.3  Recommended Operating Conditions
    4. 4.4  General Characteristics
    5. 4.5  Current Consumption
      1. 4.5.1 Typical TX Current Consumption over Temperature and Supply Voltage, 868 MHz
      2. 4.5.2 Typical TX Current Consumption over Temperature and Supply Voltage, 915 MHz
    6. 4.6  Typical RX Current Consumption Over Temperature and Input Power Level, 868 or 915 MHz
    7. 4.7  RF Receive Section
      1. 4.7.1 Typical Sensitivity over Temperature and Supply Voltage, 868 MHz, Sensitivity Optimized Setting
      2. 4.7.2 Typical Sensitivity over Temperature and Supply Voltage, 915 MHz, Sensitivity Optimized Setting
      3. 4.7.3 Blocking and Selectivity
    8. 4.8  RF Transmit Section
      1. 4.8.1 Typical Variation in Output Power over Temperature and Supply Voltage, 868 MHz
      2. 4.8.2 Typical Variation in Output Power over Temperature and Supply Voltage, 915 MHz
    9. 4.9  Crystal Oscillator
    10. 4.10 Frequency Synthesizer Characteristics
    11. 4.11 DC Characteristics
    12. 4.12 Power-On Reset
    13. 4.13 Thermal Characteristics
    14. 4.14 Typical Characteristics
      1. 4.14.1 Typical Characteristics, RX Current Consumption
      2. 4.14.2 Typical Characteristics, Blocking and Selectivity
  5. 5Detailed Description
    1. 5.1  Overview
    2. 5.2  Functional Block Diagram
    3. 5.3  Configuration Overview
    4. 5.4  Configuration Software
    5. 5.5  4-wire Serial Configuration and Data Interface
    6. 5.6  Chip Status Byte
    7. 5.7  Register Access
    8. 5.8  SPI Read
    9. 5.9  Command Strobes
    10. 5.10 FIFO Access
    11. 5.11 PATABLE Access
    12. 5.12 Microcontroller Interface and Pin Configuration
      1. 5.12.1 Configuration Interface
      2. 5.12.2 General Control and Status Pins
    13. 5.13 Data Rate Programming
    14. 5.14 Receiver Channel Filter Bandwidth
    15. 5.15 Demodulator, Symbol Synchronizer, and Data Decision
      1. 5.15.1 Frequency Offset Compensation
      2. 5.15.2 Bit Synchronization
      3. 5.15.3 Byte Synchronization
    16. 5.16 Packet Handling Hardware Support
      1. 5.16.1 Packet Format
        1. 5.16.1.1 Arbitrary Length Field Configuration
        2. 5.16.1.2 Packet Length > 255
      2. 5.16.2 Packet Filtering in Receive Mode
        1. 5.16.2.1 Address Filtering
        2. 5.16.2.2 Maximum Length Filtering
        3. 5.16.2.3 CRC Filtering
      3. 5.16.3 Packet Handling in Transmit Mode
      4. 5.16.4 Packet Handling in Receive Mode
      5. 5.16.5 Packet Handling in Firmware
    17. 5.17 Modulation Formats
      1. 5.17.1 Frequency Shift Keying
      2. 5.17.2 Amplitude Modulation
    18. 5.18 Received Signal Qualifiers and RSSI
      1. 5.18.1 Sync Word Qualifier
      2. 5.18.2 RSSI
      3. 5.18.3 Carrier Sense (CS)
        1. 5.18.3.1 CS Absolute Threshold
        2. 5.18.3.2 CS Relative Threshold
      4. 5.18.4 Clear Channel Assessment (CCA)
    19. 5.19 Radio Control
      1. 5.19.1 Power-On Start-Up Sequence
        1. 5.19.1.1 Automatic POR
        2. 5.19.1.2 Manual Reset
      2. 5.19.2 Crystal Control
      3. 5.19.3 Voltage Regulator Control
      4. 5.19.4 Active Modes (RX and TX)
      5. 5.19.5 RX Termination
      6. 5.19.6 Timing
        1. 5.19.6.1 Overall State Transition Times
        2. 5.19.6.2 Frequency Synthesizer Calibration Time
    20. 5.20 Data FIFO
    21. 5.21 Frequency Programming
    22. 5.22 VCO
      1. 5.22.1 VCO and PLL Self-Calibration
    23. 5.23 Voltage Regulators
    24. 5.24 Output Power Programming
    25. 5.25 General Purpose and Test Output Control Pins
    26. 5.26 Asynchronous and Synchronous Serial Operation
      1. 5.26.1 Asynchronous Serial Operation
      2. 5.26.2 Synchronous Serial Operation
    27. 5.27 System Considerations and Guidelines
      1. 5.27.1 SRD Regulations
      2. 5.27.2 Frequency Hopping and Multi-Channel Systems
      3. 5.27.3 Wideband Modulation when not Using Spread Spectrum
      4. 5.27.4 Data Burst Transmissions
      5. 5.27.5 Continuous Transmissions
      6. 5.27.6 Increasing Range
    28. 5.28 Configuration Registers
      1. 5.28.1 Configuration Register Details - Registers with preserved values in SLEEP state
      2. 5.28.2 Configuration Register Details - Registers that Loose Programming in SLEEP State
      3. 5.28.3 Status Register Details
    29. 5.29 Development Kit Ordering Information
  6. 6Applications, Implementation, and Layout
    1. 6.1 Bias Resistor
    2. 6.2 Balun and RF Matching
    3. 6.3 Crystal
    4. 6.4 Reference Signal
    5. 6.5 Additional Filtering
    6. 6.6 Power Supply Decoupling
    7. 6.7 PCB Layout Recommendations
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Device Nomenclature
    2. 7.2 Documentation Support
      1. 7.2.1 Related Documentation from Texas Instruments
      2. 7.2.2 Community Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Export Control Notice
    6. 7.6 Glossary
    7. 7.7 Additional Acronyms
  8. 8Mechanical Packaging and Orderable Information
    1. 8.1 Packaging Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

4 Specifications

4.1 Absolute Maximum Ratings

Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device.
Parameter Min Max Units Condition
Supply voltage –0.3 3.9 V All supply pins must have the same voltage
Voltage on any digital pin –0.3 VDD + 0.3, max 3.9 V
Voltage on the pins RF_P, RF_N, DCOUPL, RBIAS –0.3 2.0 V
Voltage ramp-up rate 120 kV/µs
Input RF level +10 dBm

4.2 Handling Ratings

Parameter MIN MAX UNIT
Storage temperature range, Tstg (default) –50 150 °C
ESD Stress Voltage, VESD Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001(1) 750 V
Charged Device Model (CDM), per JJESD22-C101(2) 400 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions

Parameter Min Max Unit Condition
Operating temperature –40 85 °C
Operating supply voltage 1.8 3.6 V All supply pins must have the same voltage

4.4 General Characteristics

Parameter Min Typ Max Unit Condition
Frequency range 300 348 MHz
387 464 MHz If using a 27 MHz crystal, the lower frequency limit for this band is 392 MHz
779 928 MHz
Data rate 0.6 500 kBaud 2-FSK
0.6 250 kBaud GFSK and OOK
0.6 300 kBaud 4-FSK (the data rate in kbps will be twice the baud rate) Optional Manchester encoding (the data rate in kbps will be half the baud rate)

4.5 Current Consumption

TA = 25°C, VDD = 3.0 V if nothing else stated. All measurement results are obtained using SWRR046 and SWRR045. Reduced current settings, MDMCFG2.DEM_DCFILT_OFF=1, gives a slightly lower current consumption at the cost of a reduction in sensitivity. See Section 4.7 for additional details on current consumption and sensitivity.

spacer

Parameter Min Typ Max Unit Condition
Current consumption in power down modes 0.2 1 µA Voltage regulator to digital part off, register values retained (SLEEP state). All GDO pins programmed to 0x2F (HW to 0)
100 µA Voltage regulator to digital part off, register values retained, XOSC running (SLEEP state with MCSM0.OSC_FORCE_ON set)
165 µA Voltage regulator to digital part on, all other modules in power down (XOFF state)
Current consumption 1.7 mA Only voltage regulator to digital part and crystal oscillator running (IDLE state)
8.4 mA Only the frequency synthesizer is running (FSTXON state). This currents consumption is also representative for the other intermediate states when going from IDLE to RX or TX, including the calibration state
Current consumption, 315 MHz 15.4 mA Receive mode, 1.2 kBaud, reduced current, input at sensitivity limit
14.4 mA Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit
15.2 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit
14.3 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit
16.5 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit
15.1 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit
27.4 mA Transmit mode, +10 dBm output power
15.0 mA Transmit mode, 0 dBm output power
12.3 mA Transmit mode, –6 dBm output power
Current consumption, 433 MHz 16.0 mA Receive mode, 1.2 kBaud, register settings optimized for reduced current, input at sensitivity limit
15.0 mA Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit
15.7 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit
15.0 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit
17.1 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit
15.7 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit
29.2 mA Transmit mode, +10 dBm output power
16.0 mA Transmit mode, 0 dBm output power
13.1 mA Transmit mode, –6 dBm output power
Current consumption, 868/915 MHz 15.7 mA Receive mode, 1.2 kBaud, register settings optimized for reduced current, input at sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
14.7 mA Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
15.6 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
14.6 mA Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
16.9 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
15.6 mA Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit.
See Figure 4-1 through Figure 4-3 for current consumption with register settings optimized for sensitivity.
34.2 mA Transmit mode, +12 dBm output power, 868 MHz
30.0 mA Transmit mode, +10 dBm output power, 868 MHz
16.8 mA Transmit mode, 0 dBm output power, 868 MHz
16.4 mA Transmit mode, –6 dBm output power, 868 MHz.
33.4 mA Transmit mode, +11 dBm output power, 915 MHz
30.7 mA Transmit mode, +10 dBm output power, 915 MHz
17.2 mA Transmit mode, 0 dBm output power, 915 MHz
17.0 mA Transmit mode, –6 dBm output power, 915 MHz

4.5.1 Typical TX Current Consumption over Temperature and Supply Voltage, 868 MHz

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] −40 25 85 −40 25 85 −40 25 85
Current [mA], PATABLE=0xC0, +12 dBm 32.7 31.5 30.5 35.3 34.2 33.3 35.5 34.4 33.5
Current [mA], PATABLE=0xC5, +10 dBm 30.1 29.2 28.3 30.9 30.0 29.4 31.1 30.3 29.6
Current [mA], PATABLE=0x50, 0 dBm 16.4 16.0 15.6 17.3 16.8 16.4 17.6 17.1 16.7

4.5.2 Typical TX Current Consumption over Temperature and Supply Voltage, 915 MHz

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] −40 25 85 −40 25 85 −40 25 85
Current [mA], PATABLE=0xC0, +11 dBm 31.9 30.7 29.8 34.6 33.4 32.5 34.8 33.6 32.7
Current [mA], PATABLE=0xC3, +10 dBm 30.9 29.8 28.9 31.7 30.7 30.0 31.9 31.0 30.2
Current [mA], PATABLE=0x8E, 0 dBm 17.2 16.8 16.4 17.6 17.2 16.9 17.8 17.4 17.1

4.6 Typical RX Current Consumption Over Temperature and Input Power Level, 868 or 915 MHz

See Section 4.14.1.

4.7 RF Receive Section

TA = 25°C, VDD = 3.0 V if nothing else stated. All measurement results are obtained using SWRR046 and SWRR045.
Parameter Min Typ Max Unit Condition
Digital channel filter bandwidth 58 812 kHz User programmable. The bandwidth limits are proportional to crystal frequency (given values assume a 26.0 MHz crystal)
Spurious emissions –68 –57 dBm 25 MHz - 1 GHz
(Maximum figure is the ETSI EN 300 220 V2.3.1 limit)
–66 –47 dBm Above 1 GHz
(Maximum figure is the ETSI EN 300 220 V2.3.1 limit)
Typical radiated spurious emission is –49 dBm measured at the VCO frequency
RX latency 9 bit Serial operation. Time from start of reception until data is available on the receiver data output pin is equal to 9 bit
315 MHz
1.2 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(2-FSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth)
Receiver sensitivity –111 dBm Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF=1. The typical current consumption is then reduced from 17.2 mA to 15.4 mA at the sensitivity limit. The sensitivity is typically reduced to -109 dBm
433 MHz
0.6 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 14.3 kHz deviation, 58 kHz digital channel filter bandwidth)
Receiver sensitivity –116 dBm
1.2 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth)
Receiver sensitivity –112 dBm Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF=1. The typical current consumption is then reduced from 18.0 mA to 16.0 mA at the sensitivity limit. The sensitivity is typically reduced to –110 dBm
38.4 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth)
Receiver sensitivity –104 dBm
250 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 540 kHz digital channel filter bandwidth)
Receiver sensitivity –95 dBm
868/915 MHz
1.2 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth)
Receiver sensitivity –112 dBm Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF=1. The typical current consumption is then reduced from 17.7 mA to 15.7 mA at sensitivity limit. The sensitivity is typically reduced to –109 dBm
Saturation –14 dBm FIFOTHR.CLOSE_IN_RX=0. See more in DN010 SWRA147
Adjacent channel rejection ±100 kHz offset 37 dB Desired channel 3 dB above the sensitivity limit.
100 kHz channel spacing
See Figure 4-4 and Figure 4-5 for selectivity performance at other offset frequencies
Image channel rejection 31 dB IF frequency 152 kHz
Desired channel 3 dB above the sensitivity limit
Blocking Desired channel 3 dB above the sensitivity limit
See Figure 4-4 and Figure 4-5 for blocking performance at other offset frequencies
±2 MHz offset –50 dBm
±10 MHz offset –40 dBm
38.4 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth)
Receiver sensitivity –104 dBm Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF=1. The typical current consumption is then reduced from 17.7 mA to 15.6 mA at the sensitivity limit. The sensitivity is typically reduced to -102 dBm
Saturation –16 dBm FIFOTHR.CLOSE_IN_RX=0. See more in DN010 SWRA147
Adjacent channel rejection Desired channel 3 dB above the sensitivity limit.
200 kHz channel spacing
See Figure 4-6 and Figure 4-7 for blocking performance at other offset frequencies
–200 kHz offset 12 dB
+200 kHz offset 25 dB
Image channel rejection 23 dB IF frequency 152 kHz
Desired channel 3 dB above the sensitivity limit
Blocking Desired channel 3 dB above the sensitivity limit
See Figure 4-6 and Figure 4-7 for blocking performance at other offset frequencies
±2 MHz offset –50 dBm
±10 MHz offset –40 dBm
250 kBaud data rate, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0
(GFSK, 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 540 kHz digital channel filter bandwidth)
Receiver sensitivity –95 dBm Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF=1. The typical current consumption is then reduced from 18.9 mA to 16.9 mA at the sensitivity limit. The sensitivity is typically reduced to -91 dBm
Saturation –17 dBm FIFOTHR.CLOSE_IN_RX=0. See more in DN010 SWRA147
Adjacent channel rejection 25 dB Desired channel 3 dB above the sensitivity limit.
750-kHz channel spacing
See Figure 4-8 and Figure 4-9 for blocking performance at other offset frequencies
Image channel rejection 14 dB IF frequency 304 kHz
Desired channel 3 dB above the sensitivity limit
Blocking Desired channel 3 dB above the sensitivity limit
See Figure 4-8 and Figure 4-9 for blocking performance at other offset frequencies

4.7.1 Typical Sensitivity over Temperature and Supply Voltage, 868 MHz, Sensitivity Optimized Setting

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] –40 25 85 –40 25 85 –40 25 85
Sensitivity [dBm] 1.2 kBaud –113 –112 –110 –113 –112 –110 –113 –112 –110
Sensitivity [dBm] 38.4 kBaud –105 –104 –102 –105 –104 –102 –105 –104 –102
Sensitivity [dBm] 250 kBaud –97 –96 –92 –97 –95 –92 –97 –94 –92

4.7.2 Typical Sensitivity over Temperature and Supply Voltage, 915 MHz, Sensitivity Optimized Setting

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] –40 25 85 –40 25 85 –40 25 85
Sensitivity [dBm] 1.2 kBaud –113 –112 –110 –113 –112 –110 –113 –112 –110
Sensitivity [dBm] 38.4 kBaud –105 –104 –102 –104 –104 –102 –105 –104 –102
Sensitivity [dBm] 250 kBaud –97 –94 –92 –97 –95 –92 –97 –95 –92

4.7.3 Blocking and Selectivity

See Section 4.14.2.

4.8 RF Transmit Section

TA = 25°C, VDD = 3.0 V, +10 dBm if nothing else stated. All measurement results are obtained using SWRR046 and SWRR045.
Parameter Min Typ Max Unit Condition
Differential load impedance Differential impedance as seen from the RF-port (RF_P and RF_N) towards the antenna.
315 MHz 122 + j31 Ω
433 MHz 116 + j41 Ω
868/915 MHz 86.5 + j43 Ω
Output power, highest setting Output power is programmable, and full range is available in all frequency bands. Output power may be restricted by regulatory limits.
See Design Note DN013 SWRA168 for output power and harmonics figures when using multi-layer inductors. The output power is then typically +10 dBm when operating at 868/915 MHz.
Delivered to a 50-Ω single-ended load through the RF matching network in SWRR046 and SWRR045
315 MHz +10 dBm
433 MHz +10 dBm
868 MHz +12 dBm
915 MHz +11 dBm
Output power, lowest setting −30 dBm Output power is programmable, and full range is available in all frequency bands
Delivered to a 50-Ω single-ended load through the RF matching network in SWRR046 and SWRR045
Harmonics, radiated Measured on SWRR046 and SWRR045 with CW, maximum output power
The antennas used during the radiated measurements (SMAFF-433 from R.W. Badland and Nearson S331 868/915) play a part in attenuating the harmonics
Note: All harmonics are below −41.2 dBm when operating in the 902 - 928 MHz band
2nd Harm, 433 MHz −49 dBm
3rd Harm, 433 MHz −40 dBm
2nd Harm, 868 MHz −47 dBm
3rd Harm, 868 MHz −55 dBm
2nd Harm, 915 MHz −50 dBm
3rd Harm, 915 MHz −54 dBm
Harmonics, conducted Measured with +10 dBm CW at 315 MHz and 433 MHz
315 MHz < −35 dBm Frequencies below 960 MHz
< −53 dBm Frequencies above 960 MHz
433 MHz −43 dBm Frequencies below 1 GHz
< −45 dBm Frequencies above 1 GHz
868 MHz 2nd Harm other harmonics −36 dBm Measured with +12 dBm CW at 868 MHz
< −46 dBm
915 MHz 2nd Harm other harmonics −34 dBm Measured with +11 dBm CW at 915 MHz (requirement is −20 dBc under FCC 15.247)
< −50 dBm
Spurious emissions conducted, harmonics not included Measured with +10 dBm CW at 315 MHz and 433 MHz
315 MHz < −58 Frequencies below 960 MHz
< −53 Frequencies above 960 MHz
433 MHz < −50 Frequencies below 1 GHz
< −54 Frequencies above 1 GHz
< −56 Frequencies within 47-74, 87.5-118, 174-230, 470-862 MHz
Measured with +12 dBm CW at 868 MHz
868 MHz < −50 Frequencies below 1 GHz
< −52 Frequencies above 1 GHz
< −53 Frequencies within 47-74, 87.5-118, 174-230, 470-862 MHz
All radiated spurious emissions are within the limits of ETSI. The peak conducted spurious emission is −53 dBm at 699 MHz (868 MHz - 169 MHz), which is in a frequency band limited to −54 dBm by EN 300 220 V2.3.1. An alternative filter can be used to reduce the emission at 699 MHz below −54 dBm, for conducted measurements, and is shown in Figure 6-2. See more information in DN017 SWRA168.
For compliance with modulation bandwidth requirements under EN 300 220 V2.3.1 in the 863 to 870 MHz frequency range it is recommended to use a 26 MHz crystal for frequencies below 869 MHz and a 27 MHz crystal for frequencies above 869 MHz.
Measured with +11 dBm CW at 915 MHz
915 MHz < −51 Frequencies below 960 MHz
< −54 Frequencies above 960 MHz
TX latency 8 bit Serial operation. Time from sampling the data on the transmitter data input pin until it is observed on the RF output ports

4.8.1 Typical Variation in Output Power over Temperature and Supply Voltage, 868 MHz

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] −40 25 85 −40 25 85 −40 25 85
Output Power [dBm], PATABLE=0xC0, +12 dBm 12 11 10 12 12 11 12 12 11
Output Power [dBm], PATABLE=0xC5, +10 dBm 11 10 9 11 10 10 11 10 10
Output Power [dBm], PATABLE=0x50, 0 dBm 1 0 -1 2 1 0 2 1 0

4.8.2 Typical Variation in Output Power over Temperature and Supply Voltage, 915 MHz

Supply Voltage Supply Voltage Supply Voltage
VDD = 1.8 V VDD = 3.0 V VDD = 3.6 V
Temperature [°C] −40 25 85 −40 25 85 −40 25 85
Output Power [dBm], PATABLE=0xC0, +11 dBm 11 10 10 12 11 11 12 11 11
Output Power [dBm], PATABLE=0x8E, +0 dBm 2 1 0 2 1 0 2 1 0

4.9 Crystal Oscillator

TA = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using SWRR046 and SWRR045.
Parameter Min Typ Max Unit Condition
Crystal frequency 26 26 27 MHz For compliance with modulation bandwidth requirements under EN 300 220 V2.3.1 in the 863 to 870 MHz frequency range it is recommended to use a 26 MHz crystal for frequencies below 869 MHz and a 27 MHz crystal for frequencies above 869 MHz.
Tolerance ±40 ppm This is the total tolerance including a) initial tolerance, b) crystal loading, c) aging, and d) temperature dependence. The acceptable crystal tolerance depends on RF frequency and channel spacing / bandwidth.
Load capacitance 10 13 20 pF Simulated over operating conditions
ESR 100 Ω
Start-up time 150 µs This parameter is to a large degree crystal dependent. Measured on SWRR046 and SWRR045 using crystal AT-41CD2 from NDK

4.10 Frequency Synthesizer Characteristics

TA = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results are obtained using SWRR046 and SWRR045. Min figures are given using a 27-MHz crystal. Typical and maximum figures are given using a 26-MHz crystal.
Parameter Min Typ Max Unit Condition
Programmed frequency resolution 397 FXOSC/216 412 Hz 26- to 27-MHz crystal. The resolution (in Hz) is equal for all frequency bands
Synthesizer frequency tolerance ±40 ppm Given by crystal used. Required accuracy (including temperature and aging) depends on frequency band and channel bandwidth / spacing
RF carrier phase noise –92 dBc/Hz at 50 kHz offset from carrier
RF carrier phase noise –92 dBc/Hz at 100 kHz offset from carrier
RF carrier phase noise –92 dBc/Hz at 200 kHz offset from carrier
RF carrier phase noise –98 dBc/Hz at 500 kHz offset from carrier
RF carrier phase noise –107 dBc/Hz at 1 MHz offset from carrier
RF carrier phase noise –113 dBc/Hz at 2 MHz offset from carrier
RF carrier phase noise –119 dBc/Hz at 5 MHz offset from carrier
RF carrier phase noise –129 dBc/Hz at 10 MHz offset from carrier
PLL turn-on or hop time
(See Table 5-11)		 72 75 75 µs Time from leaving the IDLE state until arriving in the RX, FSTXON, or TX state, when not performing calibration. Crystal oscillator running.
PLL RX/TX settling time
(See Table 5-11)		 29 30 30 µs Settling time for the 1×IF frequency step from RX to TX
PLL TX/RX settling time
(See Table 5-11)		 30 31 31 µs Settling time for the 1×IF frequency step from TX to RX. 250 kbps data rate.
PLL calibration time
(See Table 5-12)		 685 712 724 µs Calibration can be initiated manually or automatically before entering or after leaving RX/TX

4.11 DC Characteristics

TA = 25°C if nothing else stated.
Digital Inputs/Outputs Min Max Unit Condition
Logic "0" input voltage 0 0.7 V
Logic "1" input voltage VDD – 0.7 VDD V
Logic "0" output voltage 0 0.5 V For up to 4 mA output current
Logic "1" output voltage VDD – 0.3 VDD V For up to 4 mA output current
Logic "0" input current N/A –50 nA Input equals 0 V
Logic "1" input current N/A 50 nA Input equals VDD

4.12 Power-On Reset

For proper Power-On-Reset functionality the power supply should comply with the requirements in Section 4.12. Otherwise, the chip should be assumed to have unknown state until transmitting an SRES strobe over the SPI interface. See Section 5.19.1, Power-On Start-Up Sequence, for further details.
Parameter Min Typ Max Unit Condition
Power-up ramp-up time 5 ms From 0 V until reaching 1.8 V
Power off time 1 ms Minimum time between power-on and power-off

4.13 Thermal Characteristics

NAME DESCRIPTION QFN (°C/W)
RθJA Junction-to-ambient thermal resistance 47
RθJC(top) Junction-to-case (top) thermal resistance 45
RθJB Junction-to-board thermal resistance 13.6
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.12

4.14 Typical Characteristics

4.14.1 Typical Characteristics, RX Current Consumption

CC110L C001_SWRS109.png
Figure 4-1 Typical RX Current Consumption Over Temperature and Input Power Level, 868 or 915 MHz, Sensitivity Optimized Setting – 1.2 kBaud GFSK
CC110L C003_SWRS109.png
Figure 4-3 Typical RX Current Consumption Over Temperature and Input Power Level, 868 or 915 MHz, Sensitivity Optimized Setting – 250 kBaud GFSK
CC110L C002_SWRS109.png
Figure 4-2 Typical RX Current Consumption Over Temperature and Input Power Level, 868 or 915 MHz, Sensitivity Optimized Setting – 38.4 kBaud GFSK

4.14.2 Typical Characteristics, Blocking and Selectivity

CC110L C004_SWRS109.png
Figure 4-4 Typical Blocking at 1.2 kBaud Data Rate, 868.3 MHz, GFSK, 5.2 kHz Deviation. IF is 152.3 kHz and the Digital Channel Filter Bandwidth is 58 kHz
CC110L C006_SWRS109.png
Figure 4-6 Typical Blocking at 38.4 kBaud Data Rate, 868 MHz, GFSK, 20 kHz Deviation. IF is 152.3 kHz and the Digital Channel Filter Bandwidth is 100 kHz
CC110L C008_SWRS109.png
Figure 4-8 Typical Blocking at 250 kBaud Data Rate, 868 MHz, GFSK, IF is 304 kHz and the Digital Channel Filter Bandwidth is 540 kHz
CC110L C005_SWRS109.png
Figure 4-5 Typical Selectivity at 1.2 kBaud Data Rate, 868.3 MHz, GFSK, 5.2 kHz Deviation. IF is 152.3 kHz and the Digital Channel Filter Bandwidth is 58 kHz
CC110L C007_SWRS109.png
Figure 4-7 Typical Selectivity at 38.4 kBaud Data Rate, 868 MHz, GFSK, 20 kHz Deviation. IF is 152.3 kHz and the Digital Channel Filter Bandwidth is 100 kHz
CC110L C009_SWRS109.png
Figure 4-9 Typical Selectivity at 250 kBaud Data Rate, 868 MHz, GFSK, IF is 304 kHz and the Digital Channel Filter Bandwidth is 540 kHz