SLPS235D October   2009  – November 2016 CSD16301Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q2 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQK|6
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery and Load Management Applications

3 Description

This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.

Top View
CSD16301Q2 P0108-01_LPS235.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 2 nC
Qgd Gate Charge Gate-to-Drain 0.4 nC
RDS(on) Drain-to-Source On Resistance VGS = 3 V 27 mΩ
VGS = 4.5 V 23
VGS = 8 V 19
VGS(th) Threshold Voltage 1.1 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD16301Q2 3000 7-Inch Reel SON
2.00-mm × 2.00-mm
Plastic Package		 Tape and Reel
CSD16301Q2T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current (Package Limited) 5 A
Continuous Drain Current (Silicon Limited), TC = 25°C 20
Continuous Drain Current(1) 8.2
IDM Pulsed Drain Current(2) 85 A
PD Power Dissipation(1) 2.5 W
Power Dissipation, TC = 25°C 15
TJ,
TSTG		 Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 14 A, L = 0.1 mH, RG = 25 Ω		 10 mJ
  1. Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Max RθJC = 8.4°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD16301Q2 D007_SLPS235C.gif

Gate Charge

CSD16301Q2 D004_SLPS235C_FP.gif