SLPS260E March   2010  – September 2015 CSD17313Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q2 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQK|6
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery and Load Management Applications

3 Description

This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Top View
CSD17313Q2 P0108-01_LPS235.gif

Added text for spacing

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 2.1 nC
Qgd Gate Charge Gate-to-Drain 0.4 nC
RDS(on) Drain-to-Source On Resistance VGS = 3 V 31 mΩ
VGS = 4.5 V 26 mΩ
VGS = 8 V 24 mΩ
VGS(th) Threshold Voltage 1.3 V

Ordering Information(1)

PART NUMBER QTY MEDIA PACKAGE SHIP
CSD17313Q2 3000 13-Inch Reel SON 2-mm × 2-mm Plastic Package Tape and Reel
CSD17313Q2T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current (package limited) 5 A
Continuous Drain Current (silicon limited), TC = 25°C 19
Continuous Drain Current(1) 7.3
IDM Pulsed Drain Current, TA = 25°C(2) 57 A
PD Power Dissipation(1) 2.4 W
Power Dissipation, TC = 25°C 17
TJ,
TSTG 		Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse,
ID = 19A, L = 0.1mH, RG = 25Ω		 18 mJ
  1. Typical RθJA = 53°C/W on a 1-inch2, 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJC = 7.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

On State Resistance vs Gate to Source Voltage

CSD17313Q2 D007_SLPS260.gif

Gate Charge

CSD17313Q2 D004_SLPS260_FP.gif