SLPS393A October   2013  – January 2015 CSD17571Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
      1. 7.1.1 Recommended PCB Pattern
      2. 7.1.2 Recommended Stencil Pattern
    2. 7.2 Q2 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQK|6
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2 mm × 2 mm Plastic Package

2 Applications

  • Optimized for Load Switch Applications
  • Storage, Tablets, and Handheld Devices
  • Optimized for Control FET Applications

3 Description

This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.

Top View
P0108-01_LPS235.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 2.4 nC
Qgd Gate Charge Gate-to-Drain 0.6 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 24 mΩ
VGS = 10 V 20 mΩ
VGS(th) Threshold Voltage 1.6 V

Ordering Information(1)

Device Media Qty Package Ship
CSD17571Q2 7-Inch Reel 3000 SON 2 x 2 mm Plastic Package Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limit) 22 A
Continuous Drain Current(1) 7.6 A
IDM Pulsed Drain Current, TA = 25°C(2) 39 A
PD Power Dissipation(1) 2.5 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 12 A, L = 0.1 mH, RG = 25 Ω		 7.2 mJ
  1. RθJA = 50 on 1 in² Cu (2 oz.) on 0.060" thick FR4 PCB
  2. Pulse duration 10 μs, duty cycle ≤2%

RDS(on) vs VGS

graph07_SLPS393.png

Gate Charge

graph04_SLPS393.png