SLPS590A March   2016  – March 2017 CSD18542KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • KTT|2
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18542KTT FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 44 nC
Qgd Gate Charge Gate-to-Drain 6.9 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 4.0 mΩ
VGS = 10 V 3.3
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18542KTT 500 13-Inch Reel D2PAK
Plastic Package		 Tape and Reel
CSD18542KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 200 A
Continuous Drain Current (Silicon Limited), TC = 25°C 170
Continuous Drain Current (Silicon Limited), TC = 100°C 120
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 250 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 75 A, L = 0.1 mH, RG = 25 Ω		 281 mJ
  1. Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD18542KTT D007_SLPS590_r2.gif

Gate Charge

CSD18542KTT D004_SLPS590_FP.gif