DLPS036B September   2014  – October 2016 DLP9000

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  Storage Conditions
    3. 7.3  ESD Ratings
    4. 7.4  Recommended Operating Conditions
    5. 7.5  Thermal Information
    6. 7.6  Electrical Characteristics
    7. 7.7  Timing Requirements
    8. 7.8  Capacitance at Recommended Operating Conditions
    9. 7.9  Typical Characteristics
    10. 7.10 System Mounting Interface Loads
    11. 7.11 Micromirror Array Physical Characteristics
    12. 7.12 Micromirror Array Optical Characteristics
    13. 7.13 Optical and System Image Quality
    14. 7.14 Window Characteristics
    15. 7.15 Chipset Component Usage Specification
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 DLP9000
      2. 9.4.2 DLP9000X
    5. 9.5 Window Characteristics and Optics
      1. 9.5.1 Optical Interface and System Image Quality
      2. 9.5.2 Numerical Aperture and Stray Light Control
      3. 9.5.3 Pupil Match
      4. 9.5.4 Illumination Overfill
    6. 9.6 Micromirror Array Temperature Calculation
    7. 9.7 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 9.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 9.7.2 Landed Duty Cycle and Useful Life of the DMD
      3. 9.7.3 Landed Duty Cycle and Operational DMD Temperature
      4. 9.7.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Typical Application using DLP9000
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
      2. 10.2.2 Typical Application Using DLP9000X
  11. 11Power Supply Requirements
    1. 11.1 DMD Power Supply Requirements
    2. 11.2 DMD Power Supply Power-Up Procedure
    3. 11.3 DMD Mirror Park Sequence Requirements
      1. 11.3.1 DLP9000
      2. 11.3.2 DLP9000X
    4. 11.4 DMD Power Supply Power-Down Procedure
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 General PCB Recommendations
      2. 12.1.2 Power Planes
      3. 12.1.3 LVDS Signals
      4. 12.1.4 Critical Signals
      5. 12.1.5 Flex Connector Plating
      6. 12.1.6 Device Placement
      7. 12.1.7 Device Orientation
      8. 12.1.8 Fiducials
    2. 12.2 Layout Example
      1. 12.2.1 Board Stack and Impedance Requirements
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Device Handling
      2. 13.1.2 Device Nomenclature
      3. 13.1.3 Device Markings
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information
    1. 14.1 Thermal Characteristics
    2. 14.2 Package Thermal Resistance
    3. 14.3 Case Temperature

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
SUPPLY VOLTAGES
VCC Supply voltage for LVCMOS core logic (2) –0.5 4 V
VCCI Supply voltage for LVDS receivers (2) –0.5 4 V
VOFFSET Supply voltage for HVCMOS and micromirror electrode (2) (3) –0.5 9 V
VBIAS Supply voltage for micromirror electrode (2) –0.5 17 V
VRESET Supply voltage for micromirror electrode (2) –11 0.5 V
| VCC – VCCI | Supply voltage delta (absolute value) (4) 0.3 V
| VBIAS – VOFFSET | Supply voltage delta (absolute value) (5) 8.75 V
INPUT VOLTAGES
Input voltage for all other LVCMOS input pins (2) –0.5 VCC + 0.3 V
Input voltage for all other LVDS input pins (2) (6) –0.5 VCCI + 0.3 V
| VID | Input differential voltage (absolute value) (7) 700 mV
IID Input differential current (7) 7 mA
CLOCKS
ƒclock DLP9000 Clock frequency for LVDS interface, DCLK_A 440 MHz
Clock frequency for LVDS interface, DCLK_B 440
Clock frequency for LVDS interface, DCLK_C 440
Clock frequency for LVDS interface, DCLK_D 440
DLP9000X Clock frequency for LVDS interface, DCLK_A 500
Clock frequency for LVDS interface, DCLK_B 500
Clock frequency for LVDS interface, DCLK_C 500
Clock frequency for LVDS interface, DCLK_D 500
ENVIRONMENTAL
TARRAY Array temperature: operational (8) (9) 0 90 ºC
Array temperature: non–operational (9) -40 90
TWINDOW Window temperature: operational 0 70 ºC
Window temperature: non–operational -40 90
|TDELTA| Absolute termperature delta between the window test points and the ceramic test point TP1(10) 10 ºC
RH Relative Humidity, operating and non–operating 95%
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device is not implied at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure above Recommended Operating Conditions for extended periods may affect device reliability.
All voltages are referenced to common ground VSS. Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected.
VOFFSET supply transients must fall within specified voltages.
To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. Refer to Power Supply Requirements for additional information.
This maximum LVDS input voltage rating applies when each input of a differential pair is at the same voltage potential.
LVDS differential inputs must not exceed the specified limit or damage may result to the internal termination resistors.
Exposure of the DMD simultaneously to any combination of the maximum operating conditions for case temperature, differential temperature, or illumination power density may affect device reliability.
The highest temperature of the active array as calculated by the Micromirror Array Temperature Calculation using ceramic test point 1 (TP1) in Figure 15.
Temperature delta is the highest difference between the ceramic test point TP1 and window test points TP2 and TP3 in Figure 15.

Storage Conditions

applicable before the DMD is installed in the final product
MIN MAX UNIT
TDMD DMD storage temperature -40 80 °C
RH Relative Humidity, (non-condensing) 95%

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
SUPPLY VOLTAGES (1) (2)
VCC DLP9000 Supply voltage for LVCMOS core logic 3.0 3.3 3.6 V
DLP9000X Supply voltage for LVCMOS core logic 3.3 3.45 3.6
VCCI DLP9000 Supply voltage for LVDS receivers 3.0 3.3 3.6 V
DLP9000X Supply voltage for LVDS receivers 3.3 3.45 3.6
VOFFSET Supply voltage for HVCMOS and micromirror electrodes (3) 8.25 8.5 8.75 V
VBIAS Supply voltage for micromirror electrodes 15.5 16 16.5 V
VRESET –9.5 –10 –10.5 V
|VCCI–VCC| Supply voltage delta (absolute value) (4) 0.3 V
|VBIAS–VOFFSET| Supply voltage delta (absolute value) (5) 8.75 V
LVCMOS PINS
VIH High level Input voltage (6) 1.7 2.5 VCC + 0.3 V
VIL Low level Input voltage (6) – 0.3 0.7 V
IOH High level output current at VOH = 2.4 V –20 mA
IOL Low level output current at VOL = 0.4 V 15 mA
TPWRDNZ PWRDNZ pulse width (7) 10 ns
SCP INTERFACE
ƒclock SCP clock frequency (8) 500 kHz
tSCP_SKEW Time between valid SCPDI and rising edge of SCPCLK (17) –800 800 ns
tSCP_DELAY Time between valid SCPDO and rising edge of SCPCLK (17) 700 ns
tSCP_BYTE_INTERVAL Time between consecutive bytes 1 µs
tSCP_NEG_ENZ Time between falling edge of SCPENZ and the first rising edge of SCPCLK 30 ns
tSCP_PW_ENZ SCPENZ inactive pulse width (high level) 1 µs
tSCP_OUT_EN Time required for SCP output buffer to recover after SCPENZ (from tri-state) 1.5 ns
ƒclock SCP circuit clock oscillator frequency (9) 9.6 11.1 MHz
LVDS INTERFACE
ƒclock DLP9000 Clock frequency DCLK 400 MHz
DLP9000X Clock frequency DCLK (10) 400 480
|VID| Input differential voltage (absolute value) (18) 100 400 600 mV
VCM Common mode (18) 1200 mV
VLVDS LVDS voltage (18) 0 2000 mV
tLVDS_RSTZ Time required for LVDS receivers to recover from PWRDNZ 10 ns
ZIN Internal differential termination resistance 95 105 Ω
ZLINE Line differential impedance (PWB/trace) 90 100 110 Ω
ENVIRONMENTAL (11) For Illumination Source Between 420 nm and 700 nm
TARRAY DLP9000 Array temperature, Long–term operational (13) (12)(19) 10 40 to 65 (14) °C
Array temperature, Short–term operational (13) (12)(20) 0 10
DLP9000X Array temperature, Long–term operational (13) (12)(19) 10 40 (21)
Array temperature, Short–term operational (13) (12)(20) 0 10
TWINDOW DLP9000 Window Temperature test points TP2 and TP3, Long-term operational(19) 10 70 °C
DLP9000X Window Temperature test points TP2 and TP3, Long-term operational(19) 10 40
|TDELTA| Absolute Temperature delta between the window test points (TP2, TP3) and the ceramic test point TP1(15) 10 °C
ILLVIS Illumination Thermally Limited (16) mW/cm2
RH Relative Humidity (non-condensing) 95%
ENVIRONMENTAL (11) For Illumination Source Between 400 nm and 420 nm
TARRAY Array temperature, Long–term operational (13) (12)(19) 20 30 °C
Array temperature, Short–term operational (13) (12)(20) 0 20
TWINDOW Window Temperature test points TP2 and TP3, Long-term operational(19) 30 °C
|TDELTA| Absolute Temperature delta between the window test points (TP2, TP3) and the ceramic test point TP1(15) 10 °C
ILLVIS Illumination 10 W/cm2
RH Relative Humidity (non-condensing) 95%
ENVIRONMENTAL (11) For Illumination Source <400 nm and >700 nm
TARRAY DLP9000 Array temperature, Long–term operational (13) (12)(19) 10 40 to 65 (14) °C
Array temperature, Short–term operational (13) (12)(20) 0 10
DLP9000X Array temperature, Long–term operational (13) (12)(19) 10 40 (21)
Array temperature, Short–term operational (13) (12)(20) 0 10
TWINDOW DLP9000 Window Temperature test points TP2 and TP3, Long-term operational(19) 10 70 °C
DLP9000X Window Temperature test points TP2 and TP3, Long-term operational(19) 10 40
|TDELTA| Absolute Temperature delta between the window test points (TP2, TP3) and the ceramic test point TP1(15) 10 °C
ILLUV Illumination, wavelength < 400 nm 0.68 mW/cm2
ILLIR Illumination, wavelength > 700 nm 10 mW/cm2
RH Relative Humidity (non-condensing) 95%
Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected.
All voltages are referenced to common ground VSS.
VOFFSET supply transients must fall within specified max voltages.
To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. Refer to Power Supply Requirements for additional information.
Tester Conditions for VIH and VIL:
Frequency = 60 MHz. Maximum Rise Time = 2.5 ns at (20% to 80%)
Frequency = 60 MHz. Maximum Fall Time = 2.5 ns at (80% to 20%)
PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tri-states the SCPDO output pin.
The SCP clock is a gated clock. Duty cycle shall be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
SCP internal oscillator is specified to operate all SCP registers. For all SCP operations, DCLK is required.
The DLP9000X, coupled with the DLPC910, is designed for operation at 2 specific DCLK frequencies only - 400 MHz or 480 MHz. 480 MHz operation is only allowed at the specific environmental operating conditions as shown in this table.
Optimal, long-term performance and optical efficiency of the Digital Micromirror Device (DMD) can be affected by various application parameters, including illumination spectrum, illumination power density, micromirror landed duty-cycle, ambient temperature (storage and operating), DMD temperature, ambient humidity (storage and operating), and power on or off duty cycle. TI recommends that application-specific effects be considered as early as possible in the design cycle.
Simultaneous exposure of the DMD to the maximum Recommended Operating Conditions for temperature and UV illumination will reduce device lifetime.
The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1 (TP1) shown in Figure 15 and the package thermal resistance in Thermal Information using Micromirror Array Temperature Calculation.
Per Figure 16, the maximum operational case temperature should be derated based on the micromirror landed duty cycle that the DMD experiences in the end application. Refer to Micromirror Landed-On/Landed-Off Duty Cycle for a definition of micromirror landed duty cycle.
Temperature delta is the highest difference between the ceramic test point (TP1) and window test points (TP2) and (TP3) in Figure 15.
Refer to Figure 1.
Refer to Figure 2, Figure 3, and Figure 4.
Long-term is defined as the usable life of the device.
Array and Window temperatures beyond those specified as long-term are recommended for short-term conditions only (power-up). Short-term is defined as cumulative time over the usable life of the device and is less than 500 hours.
For the DLP9000X, Figure 16 does not apply and the maximum temperature is as specified in table.

Thermal Information

THERMAL METRIC (1) DLP9000 UNIT
FLS (CLGA)
355 PINS
RθJA Thermal resistance, active area to test point 1 (TP1) (max) 0.5 °C/W
The DMD is designed to conduct absorbed and dissipated heat to the back of the package where it can be removed by an appropriate heat sink. The heat sink and cooling system must be capable of maintaining the package within the temperature range specified in the Recommended Operating Conditions. The total heat load on the DMD is largely driven by the incident light absorbed by the active area, although other contributions include light energy absorbed by the window aperture and electrical power dissipation of the array. Optical systems should be designed to minimize the light energy falling outside the window clear aperture since any additional thermal load in this area can significantly degrade the reliability of the device.

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT
VOH High-level output voltage VCC = 3 V, IOH = –20 mA 2.4 V
VOL Low level output voltage VCC = 3.6, IOL = 15 mA 0.4 V
IIH High–level input current (2) (3) VCC = 3.6 V, VI = VCC 250 µA
IlL Low level input current VCC = 3.6 V, VI = 0 –250 µA
IOZ High–impedance output current VCC = 3.6 V 10 µA
CURRENT
ICC Supply current (4) DLP9000 VCC = 3.6 V, DCLK=400 MHz 1600 mA
DLP9000X VCC = 3.6V, DCLK=480 MHz 1850
ICCI DLP9000 VCCI = 3.6 V, DCLK=400 MHz 985
DLP9000X VCCI = 3.6, DCLK=480 MHz 1100
IOFFSET Supply current (5) VOFFSET = 8.75 V 25 mA
IBIAS VBIAS = 16.5 V 14
IRESET Supply current VRESET = –10.5 V 11 mA
ITOTAL DLP9000 Total Sum 2634
DLP9000X Total Sum 3000
POWER
PCC Supply power dissipation DLP9000 VCC = 3.6 V 5760 mW
DLP9000X VCC = 3.6 V 6660
PCCI DLP9000 VCCI = 3.6 V 3546 mW
DLP9000X VCCI = 3.6 V 3960
POFFSET VOFFSET = 8.75 V 219 mW
PBIAS VBIAS = 16.5 V 231 mW
PRESET VRESET = –10.5 V 115 mW
PTOTAL Supply power dissipation (6) DLP9000 Total Sum, DCLK = 400 MHz 9871 mW
DLP9000X Total Sum, DCLK = 480 MHz 11185
CAPACITANCE
CI Input capacitance ƒ = 1 MHz 10 pF
CO Output capacitance ƒ = 1 MHz 10 pF
Reset group capacitance MBRST(31:0) ƒ = 1 MHz; 2560 × 50 micromirrors 230 290 pF
All voltages are referenced to common ground VSS. Supply voltages VCC, VCCI, VOFFSET, VBIAS, and VRESET are all required for proper DMD operation. VSS must also be connected.
Applies to LVCMOS input pins only. Does not apply to LVDS pins and MBRST pins.
LVCMOS input pins utilize an internal 18000 Ω passive resistor for pull-up and pull-down configurations. Refer to Pin Configuration and Functions to determine pull-up or pull-down configuration used.
To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit.
To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit.
Total power on the active micromirror array is the sum of the electrical power dissipation and the absorbed power from the illumination source. See the Micromirror Array Temperature Calculation.

Timing Requirements

over Recommended Operating Conditions (unless otherwise noted) (1)
MIN NOM MAX UNIT
SCP INTERFACE (2)
tr Rise time 20% to 80% 200 ns
tƒ Fall time 80% to 20% 200 ns
LVDS INTERFACE (2)
tr Rise time 20% to 80% 100 400 ps
tƒ Fall time 80% to 20% 100 400 ps
LVDS CLOCKS (3)
tc Cycle time DLP9000 DCLK_A, 50% to 50% 2.5 ns
DCLK_B, 50% to 50% 2.5
DCLK_C, 50% to 50% 2.5
DCLK_D, 50% to 50% 2.5
DLP9000X DCLK_A, 50% to 50% 2.083
DCLK_B, 50% to 50% 2.083
DCLK_C, 50% to 50% 2.083
DCLK_D, 50% to 50% 2.083
tw Pulse duration DLP9000 DCLK_A, 50% to 50% 1.19 1.25 ns
DCLK_B, 50% to 50% 1.19 1.25
DCLK_C, 50% to 50% 1.19 1.25
DCLK_D, 50% to 50% 1.19 1.25
DLP9000X DCLK_A, 50% to 50% 1.031 1.042
DCLK_B, 50% to 50% 1.031 1.042
DCLK_C, 50% to 50% 1.031 1.042
DCLK_D, 50% to 50% 1.031 1.042
LVDS INTERFACE (3)
tsu Setup time D_A(15:0) before rising or falling edge of DCLK_A 0.2 ns
D_B(15:0) before rising or falling edge of DCLK_B 0.2
D_C(15:0) before rising or falling edge of DCLK_C 0.2
D_D(15:0) before rising or falling edge of DCLK_D 0.2
tsu Setup time SCTRL_A before rising or falling edge of DCLK_A 0.2 ns
SCTRL_B before rising or falling edge of DCLK_B 0.2
SCTRL_C before rising or falling edge of DCLK_C 0.2
SCTRL_D before rising or falling edge of DCLK_D 0.2
th Hold time DLP9000 D_A(15:0) after rising or falling edge of DCLK_A 0.5 ns
D_B(15:0) after rising or falling edge of DCLK_B 0.5
D_C(15:0) after rising or falling edge of DCLK_C 0.5
D_D(15:0) after rising or falling edge of DCLK_D 0.5
DLP9000X D_A(15:0) after rising or falling edge of DCLK_A 0.4
D_B(15:0) after rising or falling edge of DCLK_B 0.4
D_C(15:0) after rising or falling edge of DCLK_C 0.4
D_D(15:0) after rising or falling edge of DCLK_D 0.4
th Hold time DLP9000 SCTRL_A after rising or falling edge of DCLK_A 0.5 ns
SCTRL_B after rising or falling edge of DCLK_B 0.5
SCTRL_C after rising or falling edge of DCLK_C 0.5
SCTRL_D after rising or falling edge of DCLK_D 0.5
DLP9000X SCTRL_A after rising or falling edge of DCLK_A 0.4
SCTRL_B after rising or falling edge of DCLK_B 0.4
SCTRL_C after rising or falling edge of DCLK_C 0.4
SCTRL_D after rising or falling edge of DCLK_D 0.4
LVDS INTERFACE (3)
tskew Skew time Channel B relative to Channel A DLP9000 Channel A includes the following LVDS pairs:
DCLK_AP and DCLK_AN
SCTRL_AP and SCTRL_AN
D_AP(15:0) and D_AN(15:0)
–1.25 1.25 ns
DLP9000 Channel B includes the following LVDS pairs:
DCLK_BP and DCLK_BN
SCTRL_BP and SCTRL_BN
D_BP(15:0) and D_BN(15:0)
DLP9000X Channel A includes the following LVDS pairs:
DCLK_AP and DCLK_AN
SCTRL_AP and SCTRL_AN
D_AP(15:0) and D_AN(15:0)
-1.04 1.04 ns
DLP9000X Channel B includes the following LVDS pairs:
DCLK_BP and DCLK_BN
SCTRL_BP and SCTRL_BN
D_BP(15:0) and D_BN(15:0)
Channel D relative to Channel C DLP9000 Channel C includes the following LVDS pairs:
DCLK_CP and DCLK_CN
SCTRL_CP and SCTRL_CN
D_CP(15:0) and D_CN(15:0)
–1.25 1.25 ns
DLP9000 Channel D includes the following LVDS pairs:
DCLK_DP and DCLK_DN
SCTRL_DP and SCTRL_DN
D_DP(15:0) and D_DN(15:0)
DLP9000X Channel C includes the following LVDS pairs:
DCLK_CP and DCLK_CN
SCTRL_CP and SCTRL_CN
D_CP(15:0) and D_CN(15:0)
-1.04 1.04 ns
DLP9000X Channel D includes the following LVDS pairs:
DCLK_DP and DCLK_DN
SCTRL_DP and SCTRL_DN
D_DP(15:0) and D_DN(15:0)
Refer to Pin Configuration and Functions for pin details.
Refer to Figure 5.
Refer to Figure 6.
DLP9000 SCP_Timing_Parameters.gif
Not to scale.
Refer to SCP Interface section of the Recommended Operating Conditions table.
Figure 1. SCP Timing Parameters
DLP9000 LVDS_Voltage_Definitions_references.gif
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Refer to Pin Configuration and Functions for list of LVDS pins.
Figure 2. LVDS Voltage Definitions (References)
DLP9000 LVDS_Voltage_parameters.gif
Not to scale.
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Figure 3. LVDS Voltage Parameters
DLP9000 LVDS_Voltage_Definitions_Parameters.gif
Refer to LVDS Interface section of the Recommended Operating Conditions table.
Refer to Pin Configuration and Functions for list of LVDS pins.
Figure 4. LVDS Equivalent Input Circuit
DLP9000 Rise_Time_Fall_Time.gif
Not to scale.
Refer to the Timing Requirements table
Refer to Pin Configuration and Functions for a list of LVDS pins and SCP pins..
Figure 5. Rise Time and Fall Time
DLP9000 timing_req_Para_def_dlps036.gif
Not to scale.
Refer to LVDS INTERFACE section in the Timing Requirements table.
Figure 6. Timing Requirement Parameter Definitions
DLP9000 lvds_interf_chn_sk_dlps036.gif
Not to scale.
Refer to LVDS INTERFACE section in the Timing Requirements table.
Figure 7. LVDS Interface Channel Skew Definition

Capacitance at Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
CI Input capacitance ƒ = 1 MHz 10 pF
CO Output capacitance ƒ = 1 MHz 10 pF
CIM MBRST(31:0) input capacitance f = 1 MHz. All inputs interconnected. 230 290 pF

Typical Characteristics

When the DLP9000 DMD is controlled by two DLPC900 controllers, these digital controllers offer four modes of operation.

  1. Video Mode
  2. Video Pattern Mode
  3. Pre-Stored Pattern Mode
  4. Pattern On-The-Fly Mode

In video mode, the video source is displayed on the DMD at the rate of the incoming video source.

In modes 2, 3, and 4, the pattern rates depend on the bit depth as shown in Table 1.

When the DLP9000X DMD is controlled by the DLPC910 controller, the digital controller offers streaming 1-bit binary patterns to the DMD at speeds greater than 61 Gigabits per second (Gbps). The patterns are streamed from a customer designed applications processor into the DLPC910 input LVDS data interface. Table 2 shows the pattern rates for the different DMD Reset Modes.

Table 1. DLPC900 with DLP9000 Pattern Rate versus Bit Depth

BIT DEPTH VIDEO PATTERN MODE (Hz) PRE-STORED or PATTERN ON-THE-FLY MODE (Hz)
1 2880 9523
2 1440 3289
3 960 2638
4 720 1364
5 480 823
6 480 672
7 360 500
8 247 247

Table 2. DLPC910 with DLP9000X Pattern Rates versus Reset Mode

RESET MODE(1) MAX PIXEL DATA RATE (Gbps)(2) MAX PATTERN RATE (Hz) (5)
Global 53.42 13043(3)
Single 56.46 13783 (4)
Dual 59.89 14624 (4)
Quad 61.39 14989(4)
Refer to the DLPC910 data sheet in Related Documentation for a description of the reset modes.
Pixel data rates are based on continuous streaming.
Global reset mode allows for continuous or pulsed illumination source.
This reset mode typically requires pulsed illumination such as a laser or LED.
Increasing exposure periods may be necessary for a desired application but may decrease pattern rate.

System Mounting Interface Loads

PARAMETER MIN NOM MAX UNIT
Maximum system mounting interface load to be applied to the: Thermal interface area (See Figure 8) 35 lbs
Electrical interface area 300 lbs
Datum A interface area (1) 160 lbs
Combined loads of the thermal and electrical interface areas in excess of Datum “A” load shall be evenly distributed outside the Datum A area (300 + 35 – Datum A).
DLP9000 fig10_update.gif Figure 8. System Mounting Interface Loads

Micromirror Array Physical Characteristics

VALUE UNIT
M Number of active columns See Figure 9 2560 micromirrors
N Number of active rows 1600 micromirrors
P Micromirror (pixel) pitch 7.56 µm
Micromirror active array width M × P 19.3536 mm
Micromirror active array height N × P 12.096 mm
Micromirror active border Pond of micromirror (POM) (1) 14 micromirrors/ side
Micromirror total area P2 x M x N (converted to cm) 2.341 cm2
The structure and qualities of the border around the active array includes a band of partially functional micromirrors called the POM. These micromirrors are structurally and/or electrically prevented from tilting toward the bright or ON state, but still require an electrical bias to tilt toward OFF.
DLP9000 Micromirror_Array_Physical.gif
Refer to section Micromirror Array Physical Characteristics table for M, N, and P specifications.
Figure 9. Micromirror Array Physical Characteristics
DLP9000 active_area_DLPS036.gif Figure 10. DMD Micromirror Active Area

Micromirror Array Optical Characteristics

Refer to Optical Interface and System Image Quality for important information.

PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
α Micromirror tilt angle DMD landed state (1) 12 °
β Micromirror tilt angle tolerance (1) (2) (3) (4) (5) –1 1 °
Micromirror tilt direction (5) (6) See Figure 11 44 45 46 °
Number of out-of-specification micromirrors (7) Adjacent micromirrors 0 micromirrors
Non-adjacent micromirrors 10
Micromirror crossover time (8) (9) Typical performance 2.5 μs
DMD efficiency within the wavelength range 400 nm to 420 nm (10) 68%
DMD photopic efficiency within the wavelength range 420 nm to 700 nm (10) 66%
Measured relative to the plane formed by the overall micromirror array.
Additional variation exists between the micromirror array and the package datums.
Represents the landed tilt angle variation relative to the nominal landed tilt angle.
Represents the variation that can occur between any two individual micromirrors, located on the same device or located on different devices.
For some applications, it is critical to account for the micromirror tilt angle variation in the overall system optical design. With some system optical designs, the micromirror tilt angle variation within a device may result in perceivable non-uniformities in the light field reflected from the micromirror array. With some system optical designs, the micromirror tilt angle variation between devices may result in colorimetry variations, system efficiency variations, or system contrast variations.
When the micromirror array is landed (not parked), the tilt direction of each individual micromirror is dictated by the binary contents of the CMOS memory cell associated with each individual micromirror. A binary value of 1 results in a micromirror landing in the ON State direction. A binary value of 0 results in a micromirror landing in the OFF State direction.
An out-of-specification micromirror is defined as a micromirror that is unable to transition between the two landed states within the specified Micromirror Switching Time.
Micromirror crossover time is primarily a function of the natural response time of the micromirrors.
Performance as measured at the start of life.
Efficiency numbers assume 24-degree illumination angle, F/2.4 illumination and collection cones, uniform source spectrum, and uniform pupil illumination. Efficiency numbers assume 100% electronic mirror duty cycle and do not include optical overfill loss. Note that this number is specified under conditions described above and deviations from the specified conditions could result in decreased efficiency.
DLP9000 Micromirror_Landed_Orientation.gif
Refer to section Micromirror Array Physical Characteristics table for M, N, and P specifications.
Figure 11. Micromirror Landed Orientation and Tilt

Optical and System Image Quality

Optimizing system optical performance and image quality strongly relate to optical system design parameter trades. Although it is not possible to anticipate every conceivable application, projector image quality and optical performance is contingent on compliance to the optical system operating conditions described in a) through c) below:

  1. Numerical Aperture and Stray Light Control. The angle defined by the numerical aperture of the illumination and projection optics at the DMD optical area should be the same. This angle should not exceed the nominal device mirror tilt angle unless appropriate apertures are added in the illumination and/or projection pupils to block out flat-state and stray light from the projection lens. The mirror tilt angle defines DMD capability to separate the "ON" optical path from any other light path, including undesirable flat-state specular reflections from the DMD window, DMD border structures, or other system surfaces near the DMD such as prism or lens surfaces. If the numerical aperture exceeds the mirror tilt angle, or if the projection numerical aperture angle is more than two degrees larger than the illumination numerical aperture angle, objectionable artifacts in the display’s border and/or active area could occur.
  2. Pupil Match. TI’s optical and image quality specifications assume that the exit pupil of the illumination optics is nominally centered within two degrees of the entrance pupil of the projection optics. Misalignment of pupils can create objectionable artifacts in the display’s border and/or active area, which may require additional system apertures to control, especially if the numerical aperture of the system exceeds the pixel tilt angle.
  3. Illumination Overfill. Overfill light illuminating the area outside the active array can create artifacts from the mechanical features that surround the active array and other surface anomalies that may be visible on the screen. The illumination optical system should be designed to limit light flux incident anywhere outside the active array more than 20 pixels from the edge of the active array on all sides. Depending on the particular system’s optical architecture and assembly tolerances, this amount of overfill light on the outside of the active array may still cause artifacts to still be visible.

NOTE

TI ASSUMES NO RESPONSIBILITY FOR IMAGE QUALITY ARTIFACTS OR DMD FAILURES CAUSED BY OPTICAL SYSTEM OPERATING CONDITIONS EXCEEDING LIMITS DESCRIBED ABOVE.

Window Characteristics

PARAMETER (1) TEST CONDITIONS MIN TYP MAX UNIT
Window material designation Corning 7056
Window refractive index at wavelength 589 nm 1.487
Window aperture See (2)
Illumination overfill Refer to Illumination Overfill
Window transmittance, single–pass through both surfaces and glass (3) At wavelength 405 nm. Applies to 0° and 24° AOI only. 95%
Minimum within the wavelength range 420 nm to 680 nm. Applies to all angles 0° to 30° AOI. 97%
Average over the wavelength range 420 nm to 680 nm. Applies to all angles 30° to 45° AOI. 97%
Refer to Window Characteristics and Optics for more information.
For details regarding the size and location of the window aperture, refer to the package mechanical characteristics listed in the Mechanical ICD in the Mechanical, Packaging, and Orderable Information section.
Refer to the TI application report DLPA031, Wavelength Transmittance Considerations for DMD Window.

Chipset Component Usage Specification

The DMD is a component of one or more DLP® chipsets. Reliable function and operation of the DMD requires that it be used in conjunction with the other components of the applicable DLP chipset, including those components that contain or implement TI DMD control technology. TI DMD control technology is the TI technology and devices for operating or controlling a DMD.