JAJSDU1 August   2017 DRV5012

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Magnetic Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Magnetic Flux Direction
      2. 7.3.2 Magnetic Response
      3. 7.3.3 Output Driver
      4. 7.3.4 Sampling Rate
      5. 7.3.5 SEL Pin
      6. 7.3.6 Hall Element Location
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 BLDC Motor Sensors Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Incremental Rotary Encoding Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
    3. 8.3 Do's and Don'ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DMR|4
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage VCC –0.3 5.5 V
Power supply voltage slew rate VCC Unlimited V / µs
Output voltage OUT –0.3 VCC + 0.3 V
Output current OUT –5 5 mA
Input voltage SEL –0.3 VCC + 0.3 V
Magnetic flux density, BMAX Unlimited T
Junction temperature, TJ 105 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±6000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power supply voltage (VCC) 1.65 5.5 V
VO Output voltage (OUT) 0 VCC V
IO Output current (OUT) –5 5 mA
VI Input voltage (SEL) 0 VCC V
TA Operating ambient temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) DRV5012 UNIT
DMR (X2SON)
4 PINS
RθJA Junction-to-ambient thermal resistance 159 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 77 °C/W
RθJB Junction-to-board thermal resistance 102 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 100 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUT pin
VOH High-level output voltage IOUT = –1 mA VCC – 0.35 VCC – 0.1 V
VOL Low-level output voltage IOUT = 1 mA 0.1 0.3 V
SEL pin
VIH High-level input voltage VCC = 1.65 to 2.5 V 0.8 × VCC V
VCC = 2.5 to 5.5 V 2
VIL Low-level input voltage 0.15 × VCC V
IIH High-level input leakage current SEL = VCC 1 nA
IIL Low-level input leakage current SEL = 0 V 1 nA
DYNAMIC CHARACTERISTICS
fS Frequency of magnetic sampling SEL = Low 13.3 20 37 Hz
SEL = High 1665 2500 4700
tS Period of magnetic sampling SEL = Low 27 50 75 ms
SEL = High 0.21 0.4 0.6
ICC(AVG) Average current consumption VCC = 1.8 V SEL = Low 1.3 µA
SEL = High 142
VCC = 3 V SEL = Low 1.6 3.3
SEL = High 153 370
VCC = 5 V SEL = Low 2
SEL = High 160
ICC(PK) Peak current consumption 2 2.7 mA
tON Power-on time (see Figure 11) 55 100 µs
tACTIVE Active time period (see Figure 11) 40 µs

6.6 Magnetic Characteristics

for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BOP Magnetic threshold operate point (see Figure 9) 0.6 2 3.3 mT
BRP Magnetic threshold release point (see Figure 9) –3.3 –2 –0.6 mT
BHYS Magnetic hysteresis: |BOP – BRP| 2 4 mT

6.7 Typical Characteristics

DRV5012 D016.gif Figure 1. ICC(AVG) vs Temperature (20-Hz Mode)
DRV5012 D002-drv5012-bop-v-temperature.gif Figure 3. BOP vs Temperature
DRV5012 D004-drv5012-bop-v-supply-voltage.gif Figure 5. BOP vs VCC
DRV5012 D001-drv5012-average-supply-current-v-temperature.gif Figure 2. ICC(AVG) vs Temperature (2.5-kHz Mode)
DRV5012 D003-drv5012-brp-v-temperature.gif Figure 4. BRP vs Temperature
DRV5012 D005-drv5012-brp-v-supply-voltage.gif Figure 6. BRP vs VCC