JAJSER7D November   2018  – January 2019 LMG1210

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの概略図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
    8. 7.8 Timing Diagrams
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bootstrap Diode Operation
      2. 8.3.2 LDO Operation
      3. 8.3.3 Dead Time Selection
      4. 8.3.4 Overtemperature Protection
      5. 8.3.5 High-Performance Level Shifter
      6. 8.3.6 Negative HS Voltage Handling
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bypass Capacitor
        2. 9.2.2.2 Bootstrap Diode Selection
        3. 9.2.2.3 Handling Ground Bounce
        4. 9.2.2.4 Independent Input Mode
        5. 9.2.2.5 Computing Power Dissipation
      3. 9.2.3 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • RVR|19
サーマルパッド・メカニカル・データ
発注情報

9.2.2.2 Bootstrap Diode Selection

The bootstrap diode blocks the high voltage from the gate drive circuitry when the switch node swings high, with the rated blocking voltage equal to the maximum Vds of the GaN FET. For low or moderate frequency operation ultra-fast recovery diodes (<50 ns) are recommended. The internal low voltage switch in the LMG1210 acts to reduce the reverse recovery. For high-frequency operation a Schottky diode is recommended. To minimize switching losses and improve performance, it is important to select a diode with low capacitance.

For extreme cases, where the low-side FET on time is less than 20 ns, TI recommends using a small GaN FET as synchronous bootstrap instead of a diode. In this case, TI recommends leaving the BST pin floating or connected to VDD, and to connect the source of the synchronous bootstrap directly to VDD.