JAJSL98D October 2020 – February 2024 LMG3522R030-Q1
PRODUCTION DATA
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The LMG3522R030-Q1 is a high-performance power GaN device with integrated gate driver. The GaN device offers zero reverse recovery and ultra-low output capacitance, which enables high efficiency in bridge-based topologies. Direct-drive architecture is applied to control the GaN device directly by the integrated gate driver. This architecture provides superior switching performance compared to the traditional cascode approach and helps solve a number of challenges in GaN applications.
The integrated driver ensures the device stays off for high drain slew rates. The integrated driver also protects the GaN device from overcurrent, short-circuit, undervoltage, and overtemperature. Regarding fault signal reporting, LMG3522R030-Q1 provides different reporting method which is shown in Table 7-2. Refer to Fault Detection for more details. The integrated driver is also able to sense the die temperature and send out the temperature signal through a modulated PWM signal.
Unlike Si MOSFETs, GaN devices do not have a p-n junction from source to drain and thus have no reverse recovery charge. However, GaN devices still conduct from source to drain similar to a p-n junction body diode, but with higher voltage drop and higher conduction loss. Therefore, source-to-drain conduction time must be minimized while the LMG3522R030-Q1 GaN FET is turned off.