The slew rate of LMG352xR030-Q1 can be adjusted between approximately 20 V/ns and 150 V/ns by connecting a resistor, RDRV, from the RDRV pin to GND. The slew rate affects GaN device performance in terms of:
Generally, high slew rates provide low switching loss, but high slew rates can also create higher voltage overshoot, noise coupling, and EMI emission. Following the design recommendations in this data sheet will help mitigate the challenges caused by a high slew rate. The LMG352xR030-Q1 offers circuit designers the flexibility to select the proper slew rate for the best performance of their end equipment.