The successful use of GaN devices in
general and the LMG352xR030-Q1 in particular depends on proper use of the device. When
using the LMG352xR030-Q1, DO:
- Read and fully understand the
datasheet, including the application notes and layout recommendations.
- Use a four-layer board and place
the return power path on an inner layer to minimize power-loop inductance.
- Use small, surface-mount bypass
and bus capacitors to minimize parasitic inductance.
- Use the proper size decoupling
capacitors and locate them close to the IC as described in Section 12.1.
- Use a signal isolator to supply
the input signal for the low-side device. If not, ensure the signal source is
connected to the signal GND plane which is tied to the power source only
at the LMG352xR030-Q1 IC.
- Use the
FAULT pin to determine power-up state and to detect
overcurrent and overtemperature events and safely shut off the converter.
To avoid issues in your system when
using the LMG352xR030-Q1, DON'T:
- Use a single-layer or two-layer
PCB for the LMG352xR030-Q1 as the power-loop and bypass capacitor
inductances will be excessive and prevent proper operation of the IC.
- Reduce the bypass capacitor
values below the recommended values.
- Allow the device to experience
drain transients above 600 V as they may damage the device.
- Allow significant third-quadrant
conduction when the device is OFF or unpowered, which may cause overheating.
Self-protection feature cannot protect the device in this mode of
- Ignore the
FAULT pin output.