SBOS538F January   2011  – December 2016 OPA2322 , OPA322 , OPA4322

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA322, OPA322S
    5. 6.5 Thermal Information: OPA2322, OPA2322S
    6. 6.6 Thermal Information: OPA4322, OPA4322S
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Input and ESD Protection
      3. 7.3.3 Phase Reversal
      4. 7.3.4 Feedback Capacitor Improves Response
      5. 7.3.5 EMI Susceptibility and Input Filtering
      6. 7.3.6 Output Impedance
      7. 7.3.7 Capacitive Load and Stability
      8. 7.3.8 Overload Recovery Time
      9. 7.3.9 Shutdown Function
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Active Filter
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Leadless DFN Package
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 TINA-TI™ (Free Software Download)
        2. 11.1.2.2 DIP Adapter EVM
        3. 11.1.2.3 Universal Operational Amplifier EVM
        4. 11.1.2.4 TI Precision Designs
        5. 11.1.2.5 WEBENCH Filter Designer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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サーマルパッド・メカニカル・データ
発注情報

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply voltage, VS = (V+) – (V–) 6 V
Signal input pins(2) (V–) – 0.5 (V+) + 0.5 V
Current Signal input pins(2) –10 10 mA
Output short-circuit(3) Continuous
Temperature Operating, TA –40 150 °C
Junction, TJ 150 °C
Storage, Tstg –65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less.
Short-circuit to ground, one amplifier per package.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±200
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VS Specified voltage 1.8 5.5 V
TA Specified temperature –40 125 °C

Thermal Information: OPA322, OPA322S

THERMAL METRIC(1) OPA322 OPA322S UNITS
DBV (SOT-23) DBV (SOT-23)
5 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 219.3 177.5 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 107.5 108.9 °C/W
RθJB Junction-to-board thermal resistance 57.5 27.4 °C/W
ψJT Junction-to-top characterization parameter 7.4 13.3 °C/W
ψJB Junction-to-board characterization parameter 56.9 26.9 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Thermal Information: OPA2322, OPA2322S

THERMAL METRIC(1) OPA2322 OPA2322S UNITS
D (SOIC) DRG (SON) DGK (VSSOP) DGS (VSSOP)
8 PINS 8 PINS 8 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 122.6 50.6 174.8 171.5 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 67.1 54.9 43.9 43 °C/W
RθJB Junction-to-board thermal resistance 64 25.2 95 91.4 °C/W
ψJT Junction-to-top characterization parameter 13.2 0.6 2 1.9 °C/W
ψJB Junction-to-board characterization parameter 63.4 25.3 93.5 89.9 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance 5.7 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Thermal Information: OPA4322, OPA4322S

THERMAL METRIC(1) OPA4322 OPA4322S UNITS
PW (TSSOP) PW (TSSOP)
14 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 109.8 105.9 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 34.9 28.1 °C/W
RθJB Junction-to-board thermal resistance 52.5 51.1 °C/W
ψJT Junction-to-top characterization parameter 2.2 0.8 °C/W
ψJB Junction-to-board characterization parameter 51.8 50.4 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Electrical Characteristics

At VS = 1.8 V to 5.5 V, or ±0.9 V to ±2.75 V, TA = 25°C, RL = 10 kΩ connected to VS/2, VCM = VS/2, VOUT = VS/2, and
SHDN_x = VS+ (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage 0.5 2 mV
dVOS/dT vs temperature VS = 5.5 V 1.8 6 μV/°C
PSR vs power supply VS = 1.8 V to 5.5 V TA = 25°C 10 50 μV/V
TA = –40°C to 125°C 20 65
Channel separation At 1 kHz 130 dB
INPUT VOLTAGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio (V–) – 0.1 V < VCM < (V+) + 0.1 V TA = 25°C 90 100 dB
TA = –40°C to 125°C 90
INPUT BIAS CURRENT
IB Input bias current TA = 25°C ±0.2 ±10 pA
TA = –40°C to 85°C ±50
OPA322 and OPA322S, TA = –40°C to 125°C ±800
OPA2322 and OPA2322S, TA = –40°C to 125°C ±400
OPA4322 and OPA4322S, TA = –40°C to 125°C ±400
IOS Input offset current TA = 25°C ±0.2 ±10 pA
TA = –40°C to 85°C ±50
TA = –40°C to 125°C ±400
NOISE
Input voltage noise f = 0.1 Hz to 10 Hz 2.8 μVPP
en Input voltage noise density f = 1 kHz 8.5 nV/√Hz
f = 10 kHz 7
in Input current noise density f = 1 kHz 0.6 fA/√Hz
INPUT CAPACITANCE
Differential 5 pF
Common-mode 4 pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain 0.1 V < VO < (V+) – 0.1 V, RL = 10 kΩ 100 130 dB
0.1 V < VO < (V+) – 0.1 V, RL = 10 kΩ 94
PM Phase margin VS = 5 V, CL = 50 pF 47 °
FREQUENCY RESPONSE
GBP Gain bandwidth product VS = 5 V, CL = 50 pF, unity gain 20 MHz
SR Slew rate VS = 5 V, CL = 50 pF, G = +1 10 V/μs
tS Settling time VS = 5 V, CL = 50 pF, to 0.1%, 2-V step, G = +1 0.25 μs
VS = 5 V, CL = 50 pF, to 0.01%, 2-V step, G = +1 0.32
Overload recovery time VS = 5 V, CL = 50 pF, VIN × G > VS 100 ns
THD+N Total harmonic distortion + noise(1) VS = 5 V, CL = 50 pF, VO = 4 VPP, G = +1, f = 10 kHz,
RL = 10 kΩ
0.0005%
VS = 5 V, CL = 50 pF, VO = 2 VPP, G = +1, f = 10 kHz,
RL = 600 Ω
0.0011%
OUTPUT
VO Voltage output (swing from both rails) RL = 10 kΩ TA = 25°C 10 20 mV
TA = –40°C to 125°C 30
ISC Short-circuit current VS = 5.5 V ±65 mA
CL Capacitive load drive See Typical Characteristics
RO Open-loop output resistance IO = 0 mA, f = 1 MHz 90 Ω
POWER SUPPLY
VS Specified voltage range 1.8 5.5 V
IQ Quiescent current per amplifier OPA322 and OPA322S,
IO = 0 mA, VS = 5.5 V
TA = 25°C 1.6 1.9 mA
TA = –40°C to 125°C 2
OPA2322 and OPA2322S,
IO = 0 mA, VS = 5.5 V
TA = 25°C 1.5 1.75
TA = –40°C to 125°C 1.85
OPA4322 and OPA4322S,
IO = 0 mA, VS = 5.5 V
TA = 25°C 1.4 1.65
TA = –40°C to 125°C 1.75
Power-on time VS+ = 0 V to 5 V, to 90% IQ level 28 μs
SHUTDOWN(2)
IQSD Quiescent current
(per amplifier)
VS = 1.8 V to 5.5 V, all amplifiers disabled, SHDN = VS– 0.1 0.5 µA
VIH High voltage (enabled) VS = 1.8 V to 5.5 V, amplifier enabled (V+) – 0.1 V
VIL Low voltage (disabled) VS = 1.8 V to 5.5 V, amplifier disabled (V–) + 0.1 V
tON Amplifier enable time
(full shutdown)(3)
VS = 1.8 V to 5.5 V, full shutdown; G = 1,
VOUT = 0.9 × VS/2(4)
10 µs
Amplifier enable time
(partial shutdown)(3)
VS = 1.8 V to 5.5 V, partial shutdown; G = 1,
VOUT = 0.9 × VS/2(4)
6 µs
tOFF Amplifier disable time(3) VS = 1.8 V to 5.5 V, G = 1, VOUT = 0.1 × VS/2 3 µs
SHDN pin input bias current
(per pin)
VS = 1.8 V to 5.5 V, VIH = 5 V 0.13 µA
VS = 1.8 V to 5.5 V, VIL = 0 V 0.04
Third-order filter; bandwidth = 80 kHz at –3 dB
Ensured by design and characterization; not production tested.
Disable time (tOFF) and enable time (tON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.
Full shutdown refers to the dual OPA2322S having both channels A and B disabled (SHDN_A = SHDN_B = VS–) and the quad OPA4322S having all channels A to D disabled (SHDN_A/B = SHDN_C/D = VS–). For partial shutdown, only one SHDN pin is exercised; in this mode, the internal biasing and oscillator remain operational and the enable time is shorter.

Typical Characteristics

At TA = 25°C, VCM = VOUT = mid-supply, and RL = 10 kΩ (unless otherwise noted).
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_oloop_g_ph-frq_bos538.gif Figure 1. Open-Loop Gain and Phase vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_ibc-vs_bos513.gif Figure 3. Input Bias Current vs Supply Voltage
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_ibc-tmp_bos538.gif Figure 5. Input Bias Current vs Temperature
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_histo_voff_bos538.gif Figure 7. Offset Voltage Production Histogram
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_noise_density_bos538.gif Figure 9. Input Voltage Noise Spectral Density
vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_cloop-frq_18v_bos538.gif Figure 11. Closed-Loop Gain vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_max_vo-frq_bos538.gif Figure 13. Maximum Output Voltage vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_oloop_imp-frq_bos538.gif Figure 15. Open-Loop Output Impedance
vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_thdn-amp_bos538.gif Figure 17. THD+N vs Amplitude
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_thdn-frq_4vin_bos538.gif Figure 19. THD+N vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_sr-vs_bos538.gif Figure 21. Slew Rate vs Supply Voltage
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_sm_step_neg_bos538.gif Figure 23. Small-Signal Step Response
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_cmrr_psrr-frq_bos538.gif Figure 25. CMRR and PSRR vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S turn-on transient.png Figure 27. Turnon Transient
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S Turn-on_turn-off transient low supply.png
1.8 V (Low Supply)
Figure 29. Turnon and Turnoff Transient
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_oloop_g-tmp_bos538.gif Figure 2. Open-Loop Gain vs Temperature
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_ibc-vcm_bos513.gif Figure 4. Input Bias Current
vs Common-Mode Voltage
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_iq-vs_bos538.gif Figure 6. Quiescent Current vs Supply Voltage
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_voff-vcm_bos538.gif Figure 8. Offset Voltage vs Common-Mode Voltage
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_vin_noise_bos538.gif Figure 10. 0.1-Hz to 10-Hz Input Voltage Noise
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_cloop-frq_55v_bos538.gif Figure 12. Closed-Loop Gain vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_vo-io_bos538.gif Figure 14. Output Voltage Swing vs Output Current
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_oshoot-cl_bos538.gif Figure 16. Small-Signal Overshoot
vs Load Capacitance
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_thdn-frq_2vin_bos538.gif Figure 18. THD+N vs Frequency
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_ch_sep-frq_bos538.gif Figure 20. Channel Separation
vs Frequency (for Dual)
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_sm_step_pos_bos538.gif Figure 22. Small-Signal Step Response
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S tc_lg_step_resp_bos538.gif Figure 24. Large-Signal Step Response vs Time
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S turn-off transient.png Figure 26. Turnoff Transient
OPA322 OPA322S OPA2322 OPA2322S OPA4322 OPA4322S Turn-on_turn-off transient high supply.png
5.5 V (High Supply)
Figure 28. Turnon and Turnoff Transient