JAJSGH0C November   2018  – August 2019 SN6505A-Q1 , SN6505B-Q1 , SN6505D-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. 概要(続き)
  6. Pin Configuration and Functions
  7. Specifications
    1. Table 1. Absolute Maximum Ratings
    2. Table 2. ESD Ratings
    3. Table 3. Recommended Operating Conditions
    4. Table 4. Thermal Information
    5. Table 5. Electrical Characteristics
    6. Table 6. Timing Requirements
    7. 7.1      Typical Characteristics, SN6505A-Q1
    8. 7.2      Typical Characteristics, SN6505B-Q1 or SN6505D-Q1
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Push-Pull Converter
      2. 9.3.2 Core Magnetization
    4. 9.4 Device Functional Modes
      1. 9.4.1 Start-Up Mode
        1. 9.4.1.1 Soft-Start
      2. 9.4.2 Operating Mode
      3. 9.4.3 Shutdown-Mode
      4. 9.4.4 Spread Spectrum Clocking
      5. 9.4.5 External Clock Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Drive Capability
        2. 10.2.2.2 LDO Selection
        3. 10.2.2.3 Diode Selection
        4. 10.2.2.4 Capacitor Selection
        5. 10.2.2.5 Transformer Selection
          1. 10.2.2.5.1 V-t Product Calculation
          2. 10.2.2.5.2 Turns Ratio Estimate
          3. 10.2.2.5.3 Recommended Transformers
      3. 10.2.3 Application Curves
      4. 10.2.4 System Examples
        1. 10.2.4.1 Higher Output Voltage Designs
        2. 10.2.4.2 Application Circuits
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 関連リンク
    4. 13.4 ドキュメントの更新通知を受け取る方法
    5. 13.5 コミュニティ・リソース
    6. 13.6 商標
    7. 13.7 静電気放電に関する注意事項
    8. 13.8 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Diode Selection

A rectifier diode should always possess low-forward voltage to provide as much voltage to the converter output as possible. When used in high-frequency switching applications, such as the SN6505x-Q1 however, the diode must also possess a short recovery time. Schottky diodes meet both requirements and are therefore strongly recommended in push-pull converter designs. A good choice for low-volt applications and ambient temperatures of up to 85°C is the low-cost Schottky rectifier MBR0520L with a typical forward voltage of 275 mV at 100-mA forward current. For higher output voltages such as ±10 V and above use the MBR0530 which provides a higher DC blocking voltage of 30 V.

Lab measurements have shown that at temperatures higher than 100°C the leakage currents of the above Schottky diodes increase significantly. This can cause thermal runaway leading to the collapse of the rectifier output voltage. Therefore, for ambient temperatures higher than 85°C use low-leakage Schottky diodes, such as RB168MM-40.

SN6505A-Q1 SN6505B-Q1 SN6505D-Q1 diode_forward_left_SLLSEP9.gifFigure 43. Diode Forward Characteristics for MBR0520L
SN6505A-Q1 SN6505B-Q1 SN6505D-Q1 diode_forward_rifgt_SLLSEP9.gifFigure 44. Diode Forward Characteristics MBR0530