JAJSGH0C November   2018  – August 2019 SN6505A-Q1 , SN6505B-Q1 , SN6505D-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. 概要(続き)
  6. Pin Configuration and Functions
  7. Specifications
    1. Table 1. Absolute Maximum Ratings
    2. Table 2. ESD Ratings
    3. Table 3. Recommended Operating Conditions
    4. Table 4. Thermal Information
    5. Table 5. Electrical Characteristics
    6. Table 6. Timing Requirements
    7. 7.1      Typical Characteristics, SN6505A-Q1
    8. 7.2      Typical Characteristics, SN6505B-Q1 or SN6505D-Q1
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Push-Pull Converter
      2. 9.3.2 Core Magnetization
    4. 9.4 Device Functional Modes
      1. 9.4.1 Start-Up Mode
        1. 9.4.1.1 Soft-Start
      2. 9.4.2 Operating Mode
      3. 9.4.3 Shutdown-Mode
      4. 9.4.4 Spread Spectrum Clocking
      5. 9.4.5 External Clock Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Drive Capability
        2. 10.2.2.2 LDO Selection
        3. 10.2.2.3 Diode Selection
        4. 10.2.2.4 Capacitor Selection
        5. 10.2.2.5 Transformer Selection
          1. 10.2.2.5.1 V-t Product Calculation
          2. 10.2.2.5.2 Turns Ratio Estimate
          3. 10.2.2.5.3 Recommended Transformers
      3. 10.2.3 Application Curves
      4. 10.2.4 System Examples
        1. 10.2.4.1 Higher Output Voltage Designs
        2. 10.2.4.2 Application Circuits
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 関連リンク
    4. 13.4 ドキュメントの更新通知を受け取る方法
    5. 13.5 コミュニティ・リソース
    6. 13.6 商標
    7. 13.7 静電気放電に関する注意事項
    8. 13.8 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Capacitor Selection

The capacitors in the converter circuit in Figure 47 are multi-layer ceramic chip (MLCC) capacitors.

As with all high speed CMOS ICs, the device requires a bypass capacitor in the range of 10 nF to 100 nF.

The input bulk capacitor at the center-tap of the primary supports large currents into the primary during the fast switching transients. For minimum ripple make this capacitor 1 μF to 10 μF. In a 2-layer PCB design with a dedicated ground plane, place this capacitor close to the primary center-tap to minimize trace inductance. In a 4-layer board design with low-inductance reference planes for ground and VIN, the capacitor can be placed at the supply entrance of the board. To ensure low-inductance paths use two vias in parallel for each connection to a reference plane or to the primary center-tap.

The bulk capacitor at the rectifier output smooths the output voltage. Make this capacitor 1 μF to 10 μF.

The small capacitor at the regulator input is not necessarily required. However, good analog design practice suggests, using a small value of 47 nF to 100 nF improves the regulator’s transient response and noise rejection.

The LDO output capacitor buffers the regulated output for the subsequent isolator and transceiver circuitry. The choice of output capacitor depends on the LDO stability requirements specified in the data sheet. However, in most cases, a low-ESR ceramic capacitor in the range of 4.7 μF to 10 μF will satisfy these requirements.