SCES531L December   2003  – May 2017 SN74AVC2T45

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics: VCCA = 1.2 V
    7. 6.7  Switching Characteristics: VCCA = 1.5 V ±0.1 V
    8. 6.8  Switching Characteristics: VCCA = 1.8 V ±0.15 V
    9. 6.9  Switching Characteristics: VCCA = 2.5 V ±0.2 V
    10. 6.10 Switching Characteristics: VCCA = 3.3 V ±0.3 V
    11. 6.11 Operating Characteristics
    12. 6.12 Typical Characteristics
      1. 6.12.1 Typical Propagation Delay (A to B) vs Load Capacitance, TA = 25°C, VCCA = 1.2 V
      2. 6.12.2 Typical Propagation Delay (A to B) vs Load Capacitance, TA = 25°C, VCCA = 1.5 V
      3. 6.12.3 Typical Propagation Delay (A-to-B) vs Load Capacitance, TA = 25°C, VCCA = 1.8 V
      4. 6.12.4 Typical Propagation Delay (A to B) vs Load Capacitance, TA = 25°C, VCCA = 2.5 V
      5. 6.12.5 Typical Propagation Delay (A to B) vs Load Capacitance, TA = 25°C, VCCA = 3.3 V
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VCC Isolation
      2. 8.3.2 2-Rail Design
      3. 8.3.3 IO Ports are 4.6-V Tolerant
      4. 8.3.4 Partial-Power-Down Mode
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Unidirectional Logic Level-Shifting Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Bidirectional Logic Level-Shifting Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Enable Times
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DCU|8
  • YZP|8
  • DCT|8
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation see the following:

Implications of Slow or Floating CMOS Inputs, SCBA004

12.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

NanoFree, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.