SCES215Y April   1999  – December 2017 SN74LVC1GU04

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: TA = -40°C to +85°C
    7. 6.7 Switching Characteristics: TA = -40°C to +125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristic
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Negative Clamping Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
      6. 8.3.6 Unbuffered Logic
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • YZV|4
  • DRL|5
  • YZP|5
  • DRY|6
サーマルパッド・メカニカル・データ
発注情報

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

9.1 Application Information

The unbuffered inverter is commonly used in oscillator circuits because it is less sensitive to parameter changes in the oscillator circuit due to having lower total gain than a buffered equivalent. An example application circuit is shown in Figure 5. To learn more about how to use an unbuffered inverter in an oscillator circuit, refer to the Use of the CMOS Unbuffered Inverter in Oscillator Circuits application report.

9.2 Typical Application

SN74LVC1GU04 SN74LVC1GU04application.gif Figure 5. Typical Application Diagram

9.2.1 Design Requirements

This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it can drive currents that would exceed maximum limits. The high drive also creates fast edges into light loads, so routing and load conditions should be considered to prevent ringing.

9.2.2 Detailed Design Procedure

To learn more about how to use an unbuffered inverter in an oscillator circuit, refer to the Use of the CMOS Unbuffered Inverter in Oscillator Circuits application report.

  1. Recommended Input Conditions
    • Specified high and low levels. See (VIH and VIL) in .
    • Inputs are overvoltage tolerant allowing them to go as high as (VI max) in at any valid VCC.
  2. Absolute Maximum Output Conditions
    • Load currents must not exceed (IO max) per output and must not exceed (Continuous current through VCC or GND) total current for the part. These limits are located in .
    • Outputs must not be pulled above the voltage rated in the .

9.2.3 Application Curve

SN74LVC1GU04 D003_SCES296.gif Figure 6. ICC vs Frequency