JAJSLS0C June   2021  – March 2022 TLC6A598

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Timing Waveforms
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Serial-In Interface
      2. 8.3.2 Clear Registers
      3. 8.3.3 Output Channels
      4. 8.3.4 Register Clock
      5. 8.3.5 Cascade Through SER OUT
      6. 8.3.6 Output Control
      7. 8.3.7 Clamping Structure
      8. 8.3.8 Protection Functions
        1. 8.3.8.1 Overcurrent Protection
        2. 8.3.8.2 Output Detection
        3. 8.3.8.3 Serial Communication Error
        4. 8.3.8.4 Thermal Shutdown
      9. 8.3.9 Interface
        1. 8.3.9.1 Register Write
        2. 8.3.9.2 Register Read
        3. 8.3.9.3 Shift-Register Communication-Fault Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VCC < 3 V
      2. 8.4.2 Operation With 5.5 V ≤ VCC ≤ 7 V
    5. 8.5 Register Maps
      1. 8.5.1 Configuration Register(Offset=0h)[reset=0h]
      2. 8.5.2 Fault Readback Register(Offset=1h)[reset=0h]
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application 1
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application 2
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
    4. 9.4 Typical Application 3
      1. 9.4.1 Design Requirements
      2. 9.4.2 Detailed Design Procedure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 サポート・リソース
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Parameter Measurement Information

Figure 7-1 shows the resistive-load test circuit and voltage waveforms. One can see from Figure 7-1 that with G held low and SRCLR held high, the status of each drain changes on the rising edge of the register clock, indicating the transfer of data to the output buffers at that time.

CL includes probe and jig capacitance.
Figure 7-1 Resistive-Load Test Circuit and Voltage Waveforms

Figure 7-2 shows the reverse recovery current test circuit and waveforms of source to drain diode.

Figure 7-2 Reverse Recovery Current Test Circuit and Waveforms of Source to Drain Diode
Note: A. The VGG amplitude and RG are adjusted for di/dt = 14 A/μs. A VGG double-pulse train is used to set IF = 0.35 A, where t1 = 10 μs, t2 = 7 μs, and t3 = 3 μs.
Note: B. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point.
Note: C. IRM = maximum recovery current.

Figure 7-3 shows the single pulse avalanche energy test circuit and waveforms.

Figure 7-3 Single Pulse Avalanche Energy Test Circuit and Waveforms
Note: A. The MCU has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
Note: B. Input pulse duration, tw, is increased until peak current IAS = 500 mA.

Energy test level is defined as EAS = (IAS × V(BR)DSX × tav) / 2 = 90 mJ.