SLLSEK0A December   2014  – February 2015 TPD6F002-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 AEC-Q101 Qualified
      2. 8.3.2 Six-Channel EMI Filtering
      3. 8.3.3 Pi-Style Filter Configuration
      4. 8.3.4 Robust ESD Protection
      5. 8.3.5 Low Leakage Current
      6. 8.3.6 Space-Saving SON Package
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Signal Range on All Protected Lines
        2. 9.2.2.2 Operating Frequency
        3. 9.2.2.3 Crosstalk Response
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO IO to GND 5.75 V
TJ Junction temperature 125 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002, all pins(1) ±10 kV
Charged device model (CDM), per AEC Q101-005, all pins ±1.5
IEC 61000-4-2 Contact Discharge ±20
IEC 61000-4-2 Air-Gap Discharge ±30
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIO Input pin voltage 0 5.5 V
TA Operating free-air temperature -40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPD6F002-Q1 UNIT
DSV
12 PINS
RθJA Junction-to-ambient thermal resistance 120.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 104.4
RθJB Junction-to-board thermal resistance 78.5
ψJT Junction-to-top characterization parameter 13.0
ψJB Junction-to-board characterization parameter 77.7
RθJC(bot) Junction-to-case (bottom) thermal resistance 66.5
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

TA = –40°C to 125°C (Unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VBR DC breakdown voltage IIO = 10 μA 6 V
R Resistance VIN = 3.3 V, IIn-to-out = 1mA 85 100 115 Ω
C Capacitance (C1 or C2) VIO = 2.5 V 17 pF
IIO Channel leakage current VIO = 3.3 V 1 20 nA
fC Cut-off frequency ZSOURCE = 50 Ω, ZLOAD = 50 Ω 100 MHz
(1) Typical values are at TA = 25°C.

7.6 Typical Characteristics

TA = 25°C unless otherwise noted
D001_SLLSEK0.gifFigure 1. DC Voltage-Current Sweep across Input, Output Pins
D003_SLLSEK0.gifFigure 3. Typical Insertion-loss Characteristics
(DC Bias = 0 V, 50 Ω Environment)
D006_SLLSEK0.gifFigure 5. +8-kV IEC Waveform
D002_SLLSEK0.gifFigure 2. Series Resistance vs Temperature
D004_SLLSEK0.gifFigure 4. Capacitance (C1 or C2) vs. Bias Voltage
D007_SLLSEK0.gifFigure 6. -8-kV IEC Waveform