SLVSE16C May   2019  – January  2020 TPS1HB08-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
          2. 9.3.1.3.2 Driving Inductive Loads
        4. 9.3.1.4 Reverse Battery
        5. 9.3.1.5 Fault Event – Timing Diagrams - Version A and B
        6. 9.3.1.6 Fault Event – Timing Diagrams - Version F
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 Fault Indication and SNS Mux
        4. 9.3.2.4 Resistor Sharing
        5. 9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 TPS1HB08-Q1 AEC-Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 RILIM Calculation
        3. 10.2.2.3 Diagnostics
          1. 10.2.2.3.1 Selecting the RISNS Value
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

Table 3. Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Maximum continuous supply voltage, VBB 36 V
Load dump voltage, VLD ISO16750-2:2010(E) 40 V
Reverse battery voltage, VRev, t ≤ 3 minutes –18 V
Enable pin voltage, VEN –1 7 V
LATCH pin voltage, VLATCH –1 7 V
Diagnostic Enable pin voltage, VDIA_EN –1 7 V
Sense pin voltage, VSNS –1 18 V
Select pin voltage, VSEL` –1 7 V
Reverse ground current, IGND VBB < 0 V –50 mA
Energy dissipation during turnoff, ETOFF Single pulse, LOUT = 5 mH, TJ,start = 125°C 95(2) mJ
Energy dissipation during turnoff, ETOFF Repetitive pulse, LOUT = 5 mH, TJ,start = 125°C 56(2) mJ
Maximum junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
(2) For further details, see the section regarding switch-off of an inductive load.