SLUS599B June   2004  – October  2015 TPS2400

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage and Overvoltage Comparators and Logic
      2. 8.3.2 Charge Pump
      3. 8.3.3 Zener Diodes
      4. 8.3.4 Shut-Off MOSFET
    4. 8.4 Device Functional Modes
      1. 8.4.1 Overvoltage Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPS2400 Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Controlling the Load Inrush-Current
        3. 9.2.1.3 Application Curve
      2. 9.2.2 High-Side Switch Overvoltage Protector That Can Drive a 12−V Load
      3. 9.2.3 Low−Side Switch Overvoltage Protector That Can Drive a 12−V Load
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VVIN Input voltage VIN –0.3 110 V
VOUT Output voltage GATE (continuous) –0.3 22 V
GATE (transient, < 10 µs, Duty Cycle < 0.1%) –0.3 25
Continuous total power dissipation See Thermal Information
TJ Operating junction temperature –40 125 °C
TA Operating free-air temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage at VIN 3.1 6.8 V
Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS2400 UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 219.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 126.2 °C/W
RθJB Junction-to-board thermal resistance 51.2 °C/W
ψJT Junction-to-top characterization parameter 15.9 °C/W
ψJB Junction-to-board characterization parameter 50.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
II(VIN) Input supply current, VIN VI(VIN) = 3.1 V 65 110 µA
VI(VIN) = 5 V 95 180
VI(VIN) = 6.5 V 135 220
VI(VIN) = 100 V 550 1000
UVLO(upper) Undervoltage lockout upper threshold VI(VIN) rising 2.9 3 3.1 V
UVLO(hyst) Undervoltage lockout hysteresis 85 100 115 mV
OVP(upper) Overvoltage protection upper threshold VI(VIN) rising 6.7 6.9 7.1 V
OVP(hyst) Overvoltage protection hysteresis 135 150 165 mV
GATE DRIVE
IOSOURCE(gate) Gate sourcing current VI(VIN) = 3.1 V, VO(gate) = 7 V 3 10 µA
VI(VIN) = 5 V, VO(gate) = 10 V 3 10
IOSINK(gate) Gate sinking current(1) VI(VIN) = 7.2 V, VO(gate) = 15 V 350 485 600 mA
VOH(gate) Gate output high voltage VI(VIN) = 3.1 V, IOSOURCE(gate) = 1 µA 10 12 V
VI(VIN) = 5 V, IOSOURCE(gate) = 1.5 µA 16 19
VI(VIN) = 6.5 V, IOSOURCE(gate) = 1.5 µA 16 20
VOHMAX(gate) Gate output high maximum voltage IOSOURCE(gate) = 0 µA 20 V
VOL(gate) Gate output low voltage VI(VIN) = 7.2 V, IOSINK(gate) = 50 mA 1 V
TON(prop) Gate turnon propogation delay,
(50% VI(vin) to VO(gate) = 1 V,
RLOAD = 10 MΩ		 VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF 0.1 0.6 ms
CLOAD = 10 nF 0.9 3
TON(rise) Gate turnon rise time,
(VO(gate) = 1 V to 90%VO(gate),
RLOAD = 10 MΩ)		 VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF 1.5 6 ms
CLOAD = 10 nF 15 55
TOFF Turnoff time, (50% VI(VIN) step to VO(GATE) = 6.9 V, RLOAD = 10 MΩ) VI(VIN) stepped from 6 V to 8 V, CLOAD = 1 nF 5 0.25 µs
CLOAD = 10 nF 5 0.5
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

6.6 Typical Characteristics

TPS2400 graph_1_slus599.gif
Figure 1. Input Supply current vs Junction Temperature
TPS2400 graph_3_slus599.gif
Figure 3. Gate Sourcing Current vs Gate Voltage
TPS2400 graph_5_slus599.gif
Figure 5. Gate Sinking Current vs Junction Temperature
TPS2400 graph_7_slus599.gif
Figure 7. Turnoff Time to VGATE = 6.9 V vs Junction Temperature
TPS2400 graph_2_slus599.gif
Figure 2. Input Supply current vs Junction Temperature
TPS2400 graph_4_slus599.gif
Figure 4. Gate Sourcing Current vs Gate Voltage
TPS2400 graph_6_slus599.gif
Figure 6. Gate Output Voltage vs Input Supply Voltage
TPS2400 graph_8_slus599.gif
Figure 8. Turnoff Time to VGATE = 6.9 V vs Junction Temperature