SLVSB02B November   2013  – July 2014 TPS62740 , TPS62742

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DCS-Control™
      2. 7.3.2 CTRL / Output Load
      3. 7.3.3 Enable / Shutdown
      4. 7.3.4 Power Good Output (PG)
      5. 7.3.5 Output Voltage Selection (VSEL1 - 4)
      6. 7.3.6 Softstart
      7. 7.3.7 Undervoltage Lockout UVLO
    4. 7.4 Device Functional Modes
      1. 7.4.1 VOUT And LOAD Output Discharge
      2. 7.4.2 Automatic Transition Into 100% Mode
      3. 7.4.3 Internal Current Limit
      4. 7.4.4 Dynamic Voltage Scaling with VSEL Interface
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Inductor Selection
        2. 8.2.1.2 DC/DC Output Capacitor Selection
        3. 8.2.1.3 Input Capacitor Selection
      2. 8.2.2 Application Curves
    3. 8.3 System Example
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Pin voltage(2) VIN –0.3 6 V
SW (3) –0.3 VIN +0.3V V
EN, CTRL, VSEL1-4 –0.3 VIN +0.3V V
PG –0.3 VIN +0.3V V
VOUT, LOAD –0.3 3.7 V
PG pin IPG sink current 10 mA
Maximum operating junction temperature, TJ –40 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal GND.
(3) The MAX value VIN +0.3V applies for applicative operation (device switching), DC voltage applied to this pin may not exceed 4V

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VIN Supply voltage VIN(1) 2.2 5.5 V
IOUT + I LOAD Device output current (sum of IOUT and I LOAD) VOUTnom + 0.7V ≤ VIN ≤ 5.5V TPS62740 300 mA
3V ≤ VIN, VOUTnom + 0.7V ≤ VIN ≤ 5.5V TPS62742 400
VOUTnom ≤ VIN ≤ VOUTnom +0.7V 100
ILOAD Load current (current from LOAD pin) 100
L Inductance 1.5 2.2 3.3 µH
COUT Output capacitance connected to VOUT pin (not including LOAD pin) 22 µF
CLOAD Capacitance connected to LOAD pin 10
TJ Operating junction temperature range -40 125 °C
TA Ambient temperature range -40 85
(1) The minimum required supply voltage for startup is 2.15V (undervoltage lockout threshold VTH_UVLO+) . The device is functional down to 2V supply voltage (falling undervoltage lockout threshold VTH_UVLO-).

6.4 Thermal Information

THERMAL METRIC DSS / 12 PINS UNIT
RθJA Junction-to-ambient thermal resistance 61.8 °C/W
RθJCtop Junction-to-case (top) thermal resistance 70.9
RθJB Junction-to-board thermal resistance 25.7
ψJT Junction-to-top characterization parameter 1.9
ψJB Junction-to-board characterization parameter 25.7
RθJCbot Junction-to-case (bottom) thermal resistance 7.2

6.5 Electrical Characteristics

VIN = 3.6V, TA = –40°C to 85°C typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.2 5.5 V
IQ Operating quiescent current EN = VIN, CTRL = GND, IOUT = 0µA, VOUT = 1.8V, device not switching, 360 1800 nA
EN = VIN, IOUT = 0mA, CTRL = GND, VOUT = 1.8V , device switching 460
EN = VIN, IOUT = 0mA., CTRL = VIN, VOUT = 1.8V, device not switching 12.5 µA
ISD Shutdown current EN = GND, shutdown current into VIN 70 1000 nA
EN = GND, shutdown current into VIN, TA = 60°C 150 450
VTH_UVLO+ Undervoltage lockout threshold Rising VIN 2.075 2.15 V
VTH_UVLO- Falling VIN 1.925 2
INPUTS EN, CTRL, VSEL 1-4
VIH TH High level input threshold 2.2V ≤ VIN ≤ 5.5V 1.1 V
VIL TH Low level input threshold 2.2V ≤ VIN ≤ 5.5V 0.4 V
IIN Input bias Current TA = 25°C 10 nA
TA = –40°C to 85°C 25
POWER SWITCHES
RDS(ON) High side MOSFET on-resistance VIN = 3.6V, IOUT = 50mA 0.6 0.85 Ω
Low Side MOSFET on-resistance 0.36 0.5
ILIMF High side MOSFET switch current limit 2.2V ≤ VIN ≤ 5.5V, TPS62740 480 600 720 mA
3.0V ≤ VIN ≤ 5.5V, TPS62742 590 650 740
Low side MOSFET switch current limit TPS62740 600 mA
TPS62742 650
OUTPUT DISCHARGE SWITCH (VOUT)
RDSCH_VOUT MOSFET on-resistance VIN = 3.6V, EN = GND, IOUT = -10mA into VOUT pin 30 65 Ω
IIN_VOUT Bias current into VOUT pin VIN = 3.6V, EN = VIN, VOUT = 2V, CTRL = GND TA = 25°C 40 100 nA
TA = –40°C to 85°C 1010
LOAD OUTPUT (LOAD)
RLOAD High side MOSFET on-resistance ILOAD = 50mA, CTRL = VIN, VOUT = 2.0V, 2.2 V ≤ VIN ≤ 5.5V 0.6 1.25 Ω
RDSCH_LOAD Low side MOSFET on-resistance CTRL = GND, 2.2V ≤ VIN ≤ 5.5V, ILOAD = - 10mA 30 65
tRise_LOAD VLOAD rise time Starting with CTRL low to high transition, time to ramp VLOAD from 0V to 95% VOUT = 1.8V, 2.2V ≤ VIN ≤ 5.5V, ILOAD = 1mA 315 800 µs
AUTO 100% MODE TRANSITION
VTH_100+ Auto 100% Mode leave detection threshold (1) Rising VIN,100% Mode is left with VIN = VOUT + VTH_100+ , max value at TJ = 85°C 170 250 340 mV
VTH_100- Auto 100% Mode enter detection threshold (1) Falling VIN, 100% Mode is entered with VIN = VOUT + VTH_100-, max value at TJ = 85°C 110 200 280
POWER GOOD OUTPUT (PG, OPEN DRAIN)
VTH_PG+ Power good threshold voltage Rising output voltage on VOUT pin, referred to VVOUT 97.5%
VPG_Hys Hysteresis -3%
VOL Low level output voltage 2.2V ≤ VIN ≤ 5.5V, EN = GND, current into PG pin IPG = 4mA 0.3 V
IIN_PG Bias current into PG pin PG pin is high impedance, VOUT = 2V, EN = VIN, CTRL = GND, IOUT = 0mA TA = 25°C 0 10 nA
TA = –40°C to 85°C 25
OUTPUT
tONmin Minimum ON time VIN = 3.6V, VOUT = 2.0V, IOUT = 0 mA 225 ns
tOFFmin Minimum OFF time VIN = 2.3V 50 ns
tStartup_delay Regulator start up delay time VIN = 3.6V, from transition EN = low to high until device starts switching 10 25 ms
tSoftstart Softstart time with reduced switch current limit 2.2V ≤ VIN ≤ 5.5V, EN = VIN 700 1200 µs
ILIM_softstart High side MOSFET switch current limit Reduced switch current limit during softstart TPS62740 80 150 200 mA
TPS62742 150
Low side MOSFET switch current limit 150
VVOUT Output voltage range Output voltages are selected with pins VSEL 1 - 4 1.8 3.3 V
Output voltage accuracy VIN = 3.6V, IOUT = 10mA, VOUT = 1.8V -2.5 0% 2.5
VIN = 3.6V, IOUT = 100mA, VOUT = 1.8V –2 0% 2
DC output voltage load regulation VOUT = 1.8V, VIN = 3.6V, CTRL = VIN 0.001 %/mA
DC output voltage line regulation VOUT = 1.8V, CTRL = VIN, IOUT = 10 mA, 2.5V ≤ VIN ≤ 5.5V 0 %/V
(1) VIN is compared to the programmed output voltage (VOUT). When VIN–VOUT falls below VTH_100- the device enters 100% Mode by turning the high side MOSFET on. The 100% Mode is exited when VIN–VOUT exceeds VTH_100+ and the device starts switching. The hysteresis for the 100% Mode detection threshold VTH_100+ - VTH_100- will always be positive and will be approximately 50 mV(typ.)

6.6 Typical Characteristics

Iq_sleep_Vs_tem_vs_VIN.gif
EN = VIN, VOUT = 1.8V, CTRL = GND Device Not Switching
Figure 1. Quiescent Current
RDSON_high_side.gif
Figure 3. RDSON High Side Mosfet
RDSON_load_switch.gif
Figure 5. Load Switch Resistance RLOAD
Isd_vs_VIN_VS_TEmp.gif
EN = GND
Figure 2. Shutdown Current ISD
RDSON_low_side.gif
Figure 4. RDSON Low Side Mosfet