SWCS032F Data sheet

SWCS032F October 2008 – July 2014 TPS65950

PRODUCTION DATA.

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メカニカル・データ（パッケージ｜ピン）

ZXN|209

サーマルパッド・メカニカル・データ

発注情報

5 Detailed Description

5.1 Power Module

This section describes the electrical characteristics of the voltage regulators and timing characteristics of the supplies digitally controlled in the TPS65950.

Figure 5-1 is a block diagram of the power provider.

For TPS65950A3: 0.6V to 1.2V, 1200mA and 1.2V to 1.45V, 1400mA

Figure 5-1 Power Provider Block Diagram

NOTE

For the component values, see Table 5-92.

5.1.1 Power Providers

Table 5-1 lists the power providers.

Table 5-1 Summary of the Power Providers

Name	Use	Type	Voltage Range (V)	Default Voltage Depending on Boot Mode⁽¹⁾		Maximum Current
Name	Use	Type	Voltage Range (V)	OMAP2 Mode	OMAP3 Mode	Maximum Current
VAUX1	External	LDO	1.5, 1.8, 2.5, 2.8, 3.0	3.0 V	3.0 V	200 mA
VAUX2	External	LDO	1.3, 1.5, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, 2.5, 2.8	2.8 V	1.8 V	100 mA
VAUX3	External	LDO	1.5, 1.8, 2.5, 2.8, 3.0	2.8 V	2.8 V	200 mA
VAUX4	External	LDO	0.7, 1.0, 1.2, 1.3 1.5, 1.8, 1.85, 2.5, 2.6, 2.8, 2.85, 3.0, 3.15	1.2 V	2.8 V	100 mA
VMMC1	External	LDO	1.85, 2.85, 3.0, 3.15	1.85 V	3.0 V	220 mA
VMMC2	External	LDO	1.0, 1.2, 1.3, 1.5, 1.8, 1.85, 2.5, 2.6, 2.8, 2.85, 3.0, 3.15	2.6 V	2.6 V	100 mA
VPLL1	External	LDO	1.0, 1.2, 1.3, 1.8, 2.8, 3.0	1.3 V	1.8 V	40 mA
VPLL2	External	LDO	0.7, 1.0, 1.2, 1.3, 1.5, 1.8, 1.85, 2.5, 2.6, 2.8, 2.85, 3.0, 3.15	1.3 V	1.3 V	100 mA
VSIM	External	LDO	1.0, 1.2, 1.3, 1.8, 2.8, 3.0	1.8 V	1.8 V	50 mA
VDAC	External	LDO	1.2, 1.3, 1.8	1.8 V	1.8 V	70 mA
VIO	External	SMPS	1.8, 1.85	1.8 V	1.8 V	700 mA
VDD1 for TPS65950A2/ TPS65950A3	External	SMPS	0.6 ... 1.45	1.3 V	1.2 V	1200 mA
VDD1 for TPS65950A3	External	SMPS	1.2 ... 1.45	1.3 V	1.2 V	1400mA
VDD2	External	SMPS	0.6 ... 1.5	1.3 V	1.2 V	600 mA
VINTANA1	Internal	LDO	1.5	1.5 V	1.5 V	50 mA
VINTANA2	Internal	LDO	2.5, 2.75	2.75 V	2.75 V	250 mA
VINTDIG	Internal	LDO	1.0, 1.2, 1.3, 1.5	1.5 V	1.5 V	80 mA
USBCP	Internal	CP	5	5 V	5 V	100 mA
VUSB1V5	Internal	LDO	1.5	1.5 V	1.5 V	30 mA
VUSB1V8	Internal	LDO	1.8	1.8 V	1.8 V	30 mA
VUSB3V1	Internal	LDO	3.1	3.1 V	3.1 V	15 mA
VRRTC	Internal	LDO	1.5	1.5 V	1.5 V	30 mA
VBRTC	Internal	LDO	1.3	1.3 V	1.3 V	100 μA

(1) For the significance of boot mode, see Section 5.1.5, Power Management.

5.1.1.1 VDD1 DC-DC Regulator

5.1.1.1.1 VDD1 DC-DC Regulator Characteristics

The VDD1 DC-DC regulator is a stepdown DC-DC converter with a configurable output voltage. The programming of the output voltage and the characteristics of the DC-DC converter are SmartReflex-compatible. The regulator can be put in sleep mode to reduce its leakage (PFM) or power-down mode when it is not being used. Table 5-3 lists the characteristics of the regulator.

Table 5-2 Part Names With Corresponding VDD1 Current Support

Device Name	VDD1 Current Support
TPS65950A2ZXN/R (some bug fixes, see errata)	1.2 A
TPS65950A3ZXN/R (same as TPS65950A2 + 1 GHz support with higher current support)	1.4 A

Table 5-3 VDD1 DC-DC Regulator Characteristics

Parameter	Comments	Min	Typ	Max	Unit
Input voltage range		2.7	3.6	4.5	V
Output voltage		0.6		1.45	V
Output voltage step	Covering the 0.6 to 1.45-V range		12.5		mV
Output accuracy⁽¹⁾	0.6 to < 0.8 V	–6%		6%
	0.8 to 1.45 V	–4%		4%
Switching frequency			3.2		MHz
Conversion efficiency⁽²⁾, Figure 5-2 in active and sleep modes	I_O = 10 mA, sleep		82%
	100 mA < I_O < 400 mA		85%
	400 mA < I_O < 600 mA		80%
	600 mA < I_O < 800 mA		75%
Output current	Active mode, Output Voltage 0.6 V to 1.45 V for TPS65950A2/TPS65950A3			1200	mA
	Active mode, Output Voltage 1.2 V to1.45 V for TPS65950A3			1400	mA
	Sleep mode			10	mA
Ground current (I_Q)	Off at 30°C			3	μA
	Sleep, unloaded		30	50
	Active, unloaded, not switching			300
Short-circuit current	V_IN = V_Max		2.2		A
Load regulation	0 < I_O < I_Max			20	mV
Transient load regulation⁽³⁾	I_O = 10 mA to 600 +10 mA, Maximum slew rate is 600mA/100 ns.	–65		50	mV
Line regulation				10	mV
Transient line regulation	300 mV_PP ac input, 10-μs rise and fall time			10	mV
Startup time			0.25	1	ms
Recovery time	From sleep mode to on mode with constant load		<10	100	μs
Slew rate (rising or falling)⁽⁴⁾		4	8	16	mV/μs
Output shunt resistor (pulldown)			500	700	Ω
External coil	Value	0.7	1	1.3	μH
	DCR			0.1	Ω
	Saturation current for TPS65950A2	1.8			A
	Saturation current for TPS65950A3	2.1			A
External capacitor⁽¹⁾	Value	8	10	12	μF
External capacitor⁽¹⁾	Equivalent series resistance (ESR) at switching frequency	0		20	mΩ

(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process). Under current load condition step: 600 mA in 100 ns with a ±20% external capacitor accuracy or 400 mA in 100 ns with a ±50% external capacitor accuracy

(2) VBAT = 3.6 V, VDD1 = 1.2 V, Fs = 3.2 MHz, L = 1 μH, L_DCR = 100 mΩ, C = 10 μF, ESR = 10 mΩ

(3) For negative transient load, the output voltage must discharge completely and settle to its final value within 100 ms.
Transient load is specified at Vout max with a ±50% external capacitor accuracy and includes temperature and process variation.

(4) Load current varies proportionally with the output voltage. The slew rate is for increasing and decreasing voltages and the maximum load current is 1.1 A.

See Table 3-2 for how to connect the VDD1/2 DC-DC converter when it is not used.

Figure 5-2 shows the efficiency of the VDD1 DC-DC regulator in active and sleep modes.

Figure 5-2 VDD1 DC-DC Regulator Efficiency – Output Voltage = 1.3 V, VBAT = 3.6 V

5.1.1.1.2 External Components and Application Schematic

Figure 5-3 is an application schematic with the external components on the VDD1 DC-DC regulator.

Figure 5-3 VDD1 DC-DC Application Schematic

NOTE

For the component values, see Table 5-92.

5.1.1.2 VDD2 DC-DC Regulator

5.1.1.2.1 VDD2 DC-DC Regulator Characteristics

The VDD2 DC-DC regulator is a programmable output stepdown DC-DC converter with an internal field effect transistor (FET). Like the VDD1 regulator, the VDD2 regulator can be placed in sleep or power-down mode and is SmartReflex-compatible. The VDD2 regulator differs from VDD1 in its current load capability. Table 5-4 lists the characteristics of the regulator.

Table 5-4 VDD2 DC-DC Regulator Characteristics

Parameter	Comments	Min	Typ	Max	Unit
Input voltage range		2.7	3.6	4.5	V
Output voltage		0.6	1	1.5	V
Output voltage step	Covering the 0.6-V to 1.45-V range, 1.5 V is a single programmable value.		12.5		mV
Output accuracy⁽¹⁾	0.6 to < 0.8 V	–6%		6%
	0.8 o 1.5 V	–4%		4%
Switching frequency			3.2		MHz
Conversion efficiency⁽²⁾, Figure 5-4 in active mode and sleep mode	I_O = 10 mA, sleep		82%
	100 mA < I_O < 300 mA		85%
	300 mA < I_O < 500 mA		80%
Output current	Active mode			700	mA
Output current	Sleep mode			10	mA
Ground current (I_Q)	Off at 30°C			1	μA
	Sleep, unloaded			50
	Active, unloaded, not switching			300
Short-circuit current	V_IN = V_Max		1.2		A
Load regulation	0 < I_O < I_Max			20	mV
Transient load regulation⁽³⁾	I_O = 10 mA to (I_Max/2) + 10 mA, Maximum slew rate is I_Max/2/100 ns.	–65		50	mV
Line regulation				10	mV
Transient line regulation	300 mV_PP ac input, 10-μs rise and fall time			10	mV
Output shunt resistor (internal pulldown)			500	700	Ω
Startup time			0.25	1	ms
Recovery time	From sleep mode to on mode with constant load		25	100	μs
Slew rate (rising or falling)⁽⁴⁾		4	8	16	mV/μs
External coil	Value	0.7	1	1.3	μH
	DCR			0.1	Ω
	Saturation current	900			mA
External capacitor⁽⁵⁾	Value	8	10	12	μF
External capacitor⁽⁵⁾	ESR at switching frequency	0		20	mΩ

(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process)

(2) VBAT = 3.8 V, VDD2 = 1.3 V, Fs = 3.2 MHz, L = 1 μH, L_DCR = 100 mΩ, C = 10 μF, ESR = 10 mΩ

(3) Output voltage must discharge the load current completely and settle to its final value within 100 μs.

(4) Load current varies proportionally with the output voltage. The slew rate is for increasing and decreasing voltages and the maximum load current is 600 mA.

(5) Under current load condition step:
Imax/2 (300 mA) in 100 ns with a ±20% external capacitor accuracy or
Imax/3 (200 mA) in 100 ns with a ±50% external capacitor accuracy

See Table 3-2 for how to connect the VDD2 DC-DC converter when it is not used.

Figure 5-4 shows the efficiency of the VDD2 DC-DC regulator in active and sleep modes.

Figure 5-4 VDD2 DC-DC Regulator Efficiency – Output Voltage = 1.3 V, VBAT = 3.6 V

5.1.1.2.2 External Components and Application Schematic

Figure 5-5 is an application schematic with the external components of the VDD2 DC-DC regulator.

Figure 5-5 VDD2 DC-DC Application Schematic

NOTE

For the component values, see Table 5-92.

5.1.1.3 VIO DC-DC Regulator

5.1.1.3.1 VIO DC-DC Regulator Characteristics

The I/Os and memory DC-DC regulator is a 600-mA stepdown DC-DC converter (internal FET) with two output voltage settings. It supplies the memories and all I/O ports in the application and is one of the first power providers to switch on in the power-up sequence. This DC-DC regulator can be placed in sleep or power-down mode; however, care must be taken in the sequencing of this power provider, because numerous electrostatic discharge (ESD) blocks are connected to this supply. Table 5-5 lists the characteristics of the regulator.

Table 5-5 VIO DC-DC Regulator Characteristics

Parameter	Comments	Min	Typ	Max	Unit
Input voltage range		2.7	3.6	4.5	V
Output voltage⁽¹⁾			1.8 1.85		V
Output accuracy ⁽²⁾		–4%		4%
Output accuracy ⁽²⁾		–3%		3%
Switching frequency			3.2		MHz
Conversion efficiency⁽³⁾Figure 5-6 in active mode and sleep modes	I_O = 10 mA, sleep		85%
	100 mA < I_O < 400 mA		85%
	400 mA < I_O < 600 mA		80%
Output current	On mode			700	mA
Output current	Sleep mode			10
Ground current (I_Q)	Off at 30°C			1	μA
Ground current (I_Q)	Sleep, unloaded			50	μA
	Active, unloaded, not switching			300
Load transient⁽⁴⁾				50	mV
Line transient	300 mV_PP ac, input rise and fall time 10 μs			10	mV
Start-up time			0.25	1	ms
Recovery time	From sleep mode to on mode with constant load		<10	100	μs
Output shunt resistor (internal pulldown)			500	700	Ω
External coil	Value	0.7	1	1.3	μH
	DCR			0.1	Ω
	Saturation current	900			mA
External capacitor	Value	8	10	12	μF
External capacitor	ESR at switching frequency	1		20	mΩ

(1) This voltage is tuned according to the platform and transient requirements.

(2) ±4% accuracy includes all variations (line and load regulation, line and load transient, temperature, process).
±3% accuracy is dc accuracy only.

(3) VBAT = 3.8 V, VIO = 1.8 V, Fs = 3.2 MHz, L = 1 μH, L_DCR = 100 mΩ, C = 10 μF, ESR = 10 mΩ

(4) Load transient can also be specified as 0 < I_O < I_OUTmax/2, Δt = 1 μs, 100 mV but this is not included in ±4% accuracy.

Figure 5-6 shows the efficiency of the VIO DC-DC regulator in active and sleep modes.

Figure 5-6 VIO DC-DC Regulator Efficiency in Active Mode – Output Voltage = 1.2 V, VBAT = 3.8 V

5.1.1.3.2 External Components and Application Schematic

Figure 5-7 is an application schematic with the external components of the VIO DC-DC regulator.

Figure 5-7 VIO DC-DC Application Schematic

NOTE

For the component values, see Table 5-92.

5.1.1.4 VDAC LDO Regulator

The VDAC programmable LDO regulator is a high power-supply ripple rejection (PSRR), low-noise, linear regulator that powers the host processor dual-video DAC. It is controllable with registers through I²C and can be powered down. Table 5-6 lists the characteristics of the regulator.

Table 5-6 VDAC LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VDAC.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode	1.164	1.2	1.236	V
			1.261	1.3	1.339
			1.746	1.8	1.854
I_OUT	Rated output current	On mode			70	mA
		Low-power mode			5
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 20 kHz	65			dB
		20 kHz < f < 100 kHz	45
		f = 1 MHz	40
		V_IN = V_OUT + 1 V, I_O = I_Max
	Output noise	100 Hz < f < 5 kHz			400	nV/√Hz
		5 kHz < f < 400 kHz			125
		400 kHz < f < 10 MHz			50
	Ground current	On mode, I_OUT = 0			150	μA
		On mode, I_OUT = I_OUTmax			350
		Low-power mode, I_OUT = 0			15
		Low-power mode, I_OUT = 1 mA			25
		Off mode at 55°C			1
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 60 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.5 VPLL1 LDO Regulator

The VPLL1 programmable LDO regulator is high-PSRR, low-noise, linear regulator used for the host processor phase-locked loop (PLL) supply. Table 5-7 lists the characteristics of the regulator.

Table 5-7 VPLL1 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VPLL1.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	0.97	1.0	1.03	V
			1.164	1.2	1.236
			1.261	1.3	1.339
			1.746	1.8	1.854
			2.716	2.8	2.884
			2.91	3.0	3.090
I_OUT	Rated output current	On mode			40	mA
		Low-power mode			5
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz	50			dB
		10 kHz < f < 100 kHz	40
		f = 1 MHz	30
		V_IN = V_OUT + 1 V, I_O = I_Max
	Ground current	On mode, I_OUT = 0			70	μA
		On mode, I_OUT = I_OUTmax			110
		Low-power mode, I_OUT = 0			15
		Low-power mode, I_OUT = 1 mA			16
		Off mode at 55°C			1
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 60 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.6 VPLL2 LDO Regulator

The VPLL2 programmable LDO regulator is a high-PSRR, low-noise, linear regulator used for the host processor PLL supply. Table 5-8 lists the characteristics of the regulator.

Table 5-8 VPLL2 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VPLL2.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	0.672 0.97 1.164 1.261 1.455 1.746 1.795 2.425 2.522 2.716 2.765 2.91 3.05	0.7 1.0 1.2 1.3 1.5 1.8 1.85 2.5 2.6 2.8 2.85 3.0 3.15	0.728 1.03 1.236 1.339 1.545 1.854 1.906 2.575 2.678 2.884 2.936 3.09 3.245	V
I_OUT	Rated output current	On mode Low-power mode			100 5	mA
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 30			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 1 mA Off mode at 55°C			70 160 17 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.7 VMMC1 LDO Regulator

The VMMC1 LDO regulator is a programmable linear voltage converter that powers the multimedia channel (MMC) slot. It includes a discharge resistor and overcurrent (short -ircuit) protection. This LDO regulator can also be turned off automatically when MMC card extraction is detected. The VMMC1 LDO can be powered through an independent supply other than the battery; for example, a charge pump (CP). In this case, the input from the VMMC1 LDO can be higher than the battery voltage. Table 5-9 lists the characteristics of the regulator.

Table 5-9 VMMC1 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VMMC1.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	5.5	V
V_OUT	Output voltage	On mode and low-power mode	1.7945 2.7645 2.91 3.0555	1.85 2.85 3.0 3.15	1.9055 2.9355 3.09 3.2445	V
I_OUT	Rated output current	On mode Low-power mode			220 5	mA
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 25			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 5 mA Off mode at 55°C			70 290 17 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.8 VMMC2 LDO Regulator

The VMMC2 LDO regulator is a programmable linear voltage converter that powers MMC slot 2. It includes a discharge resistor and overcurrent (short-circuit) protection. The VMMC2 LDO can be powered through an independent supply other than the battery (for example, a CP). In this case, the input from the VMMC2 LDO can be higher than the battery voltage. Table 5-10 lists the characteristics of the regulator.

Table 5-10 VMMC2 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VMMC2.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	5.5	V
V_OUT	Output voltage	On mode and low-power mode	0.7 1.164 1.261 1.455 1.746 1.795 2.425 2.522 2.716 2.765 2.91 3.056	1.0 1.2 1.3 1.5 1.8 1.85 2.5 2.6 2.8 2.85 3.0 3.15	1.03 1.236 1.339 1.545 1.854 1.906 2.575 2.678 2.884 2.936 3.09 3.245	V
I_OUT	Rated output current	On mode Low-power mode			100 5	mA
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 30			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 50 μA Off mode at 55°C			70 170 17 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.9 VSIM LDO Regulator

The VSIM voltage regulator is a programmable, low-dropout, linear voltage regulator that supplies the subscriber identity module (SIM)-card and the SIM-card driver. This LDO regulator can be turned off automatically when SIM card extraction is detected. Table 5-11 lists the characteristics of the regulator.

Table 5-11 VSIM LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VSIM.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	0.97 1.164 1.261 1.746 2.716 2.91	1.0 1.2 1.3 1.8 2.8 3.0	1.03 1.236 1.339 1.854 2.884 3.09	V
I_OUT	Rated output current	On mode Low-power mode			50 1	mA
	dc load regulation	On mode: 0 < I_O < I_Max			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 30			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 1 mA Off mode at 55°C			70 120 15 16 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.10 VAUX1 LDO Regulator

The VAUX1 GP LDO regulator powers the auxiliary devices. The VAUX1 regulator can also support an inductive load such as a vibrator. While operating in vibrator mode, the VAUX1 LDO has the following features:

Programmable, register-controlled, soft-start function
Enabled through the VIBRA.SYNC pin
Programmable, register-controlled, duty cycle (PWM generator) based on a nominal 4-Hz cycle derived from an internal 32-kHz clock

Table 5-12 lists the characteristics of the regulator.

Table 5-12 VAUX1 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VAUX1.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
	Vibrator inductive load⁽¹⁾	Connected from VAUX1.OUT to analog ground	70		700	μH
	Vibrator load resistance⁽¹⁾		15		50	Ω
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	1.455 1.746 2.425 2.716 2.91	1.5 1.8 2.5 2.8 3.0	1.545 1.854 2.575 2.884 3.09	V
I_OUT	Rated output current	On mode Low-power mode			200 5	mA
	dc load regulation	On mode: I_OUT = I_OUTmax to 0			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT) Soft-start function for inductive load			100 500	μs
	Turn-off time				5000	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 25			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 5 mA Off mode at 55°C			70 270 15 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

(1) Parameter not tested, used for design specification only

5.1.1.11 VAUX2 LDO Regulator

The VAUX2 GP LDO regulator powers the auxiliary devices. Table 5-13 lists the characteristics of the regulator.

Table 5-13 VAUX2 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VAUX2.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	–3%	1.3 1.5 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.8	3%	V
I_OUT	Rated output current	On mode Low-power mode			100 5	mA
	dc load regulation	On mode: I_OUT= I_OUTmax to 0			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 25			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 5 mA Off mode at 55°C			70 170 17 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.12 VAUX3 LDO Regulator

The VAUX3 GP LDO regulator powers the auxiliary devices. Table 5-14 lists the characteristics of the regulator.

Table 5-14 VAUX3 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VAUX3.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	1.455 1.746 2.425 2.716 2.91	1.5 1.8 2.5 2.8 3.0	1.545 1.854 2.575 2.884 3.09	V
I_OUT	Rated output current	On mode Low-power mode			200 5	mA
	dc load regulation	On mode: I_OUT = I_OUTmax to 0			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 25			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 5 mA Off mode at 55°C			70 270 15 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.13 VAUX4 LDO Regulator

The VAUX4 GP LDO regulator powers the auxiliary devices. The VAUX4 regulator has an independent supply input pin and can be preregulated by an external voltage. Table 5-15 lists the characteristics of the regulator.

Table 5-15 VAUX4 LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VAUX4.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage		2.7	3.6	4.5	V
V_OUT	Output voltage	On mode and low-power mode	0.672 0.97 1.164 1.261 1.455 1.746 1.795 2.425 2.522 2.716 2.765 2.91 3.056	0.7 1.0 1.2 1.3 1.5 1.8 1.85 2.5 2.6 2.8 2.85 3.0 3.15	0.728 1.03 1.236 1.339 1.545 1.854 1.906 2.575 2.678 2.884 2.936 3.09 3.245	V
I_OUT	Rated output current	On mode Low-power mode			100 5	mA
	dc load regulation	On mode: I_OUT = I_OUTmax to 0			20	mV
	dc line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			3	mV
	Turn-on time	I_OUT = 0, C_L = 1 μF (within 10% of V_OUT)			100	μs
	Wake-up time	Full load capability			10	μs
	Ripple rejection	f < 10 kHz 10 kHz < f < 100 kHz f = 1 MHz V_IN = V_OUT + 1 V, I_O = I_Max	50 40 30			dB
	Ground current	On mode, I_OUT = 0 On mode, I_OUT = I_OUTmax Low-power mode, I_OUT = 0 Low-power mode, I_OUT = 5 mA Off mode at 55°C			70 170 17 20 1	μA
V_DO	Dropout voltage	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_Load: I_Min – I_Max Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV

5.1.1.14 Internal LDOs

Table 5-16 lists the regulators that power the device, and the output loads associated with them.

Table 5-16 Output Load Conditions

Regulator	Parameter	Test Conditions	Min	Typ	Max	Unit
VINTDIG LDO	Filtering capacitor	Connected from VINTDIG.OUT to analog ground	0.3	1	2.7	μF
VINTDIG LDO	Filtering capacitor ESR		20		600	mΩ
VINTANA1 LDO	Filtering capacitor	Connected from VINTANA1.OUT to analog ground	0.3	1	2.7	μF
VINTANA1 LDO	Filtering capacitor ESR		20		600	mΩ
VINTANA2 LDO	Filtering capacitor	Connected from VINTANA2.OUT to analog ground	0.3	1	2.7	μF
VINTANA2 LDO	Filtering capacitor ESR		20		600	mΩ
VRUSB_3V1 LDO	Filtering capacitor	Connected from VUSB.3P1 to GND	0.3	1	2.7	μF
VRUSB_3V1 LDO	Filtering capacitor ESR		0	10	600	mΩ
VRUSB_1V8 LDO	Filtering capacitor	Connected from VINTUSB1P8.OUT to GND	0.3	1	2.7	μF
VRUSB_1V8 LDO	Filtering capacitor ESR		0	10	600	mΩ
VRUSB_1V5 LDO	Filtering capacitor	Connected from VINTUSB1P5 to GND	0.3	1	2.7	μF
VRUSB_1V5 LDO	Filtering capacitor ESR		0	10	600	mΩ

5.1.1.15 CP

The CP generates a 4.8-V (nominal) power supply voltage from the battery to the VBUS pin. The input voltage range is 2.7 to 4.5 V for the battery voltage. The CP operating frequency is 1 MHz.

The CP tolerates 7 V on VBUS when it is in power-down mode. The CP integrates a short-circuit current limitation at 450 mA. Table 5-17 lists the characteristics of the CP.

Table 5-17 CP Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VBUS to VSSP	1.41	4.7	6.5	μF
	Flying capacitor	Connected from CP to CN	1.32	2.2	3.08	μF
	Filtering capacitor ESR				20	mΩ
Electrical Characteristics
V_IN	Input voltage	On mode: V_IN = VBAT	2.7	3.6	4.5	V
V_O	Output voltage		4.6	4.8	5.25	V
I_load	Rated output current	VBAT > 3 V at VBUS	0		100	mA
I_load	Rated output current	2.7 V < VBAT < 3 V, at VBUS	0		50	mA
	Efficiency	I_Load = 100 mA, VBAT = 3.6 V		55%
	Setting time	I_LOADmax/2 to I_LOAmax in 5 μs		100	400	μs
	Startup time				3	ms
	Short-circuit limitation current		250	350	450	mA
	dc load regulation	I_LOADmin to I_LOADmax		250	500	mV
	dc line regulation	3.0 V to VBAT_max I_Load = 100 mA		250	350	mV
	Transient load regulation	I_{VBUS_5Vmax/2} – I_{VBUS_5Vmax} 50 μs, C = 2*4.7 μF		300	350	mV
	Transient load regulation	0 – I_{VBUS_5Vmax/2}, 50 μs, C = 2*4.7 μF			350	mV
	Transient line regulation	VBAT_min to VBAT_max in 50 μs, C = 2*4.7 μF		300	350	mV

5.1.1.16 USB LDO Short-Circuit Protection Scheme

The short-circuit current for the LDOs and DC-DC converters in TPS65950 is approximately twice the maximum load current. In certain cases when the output of the block is shorted to ground, the power dissipation can exceed the 1.2-W requirement if no action is taken. A short-circuit protection scheme is included in the TPS65950 to ensure that if the output of an LDO or DC-DC is short-circuited, the power dissipation does not exceed the 1.2-W level.

The three USB LDOs, VRUSB3V1, VRUSB1V8, and VRUSB1V5, are included in this short-circuit protection scheme, which monitors the LDO output voltage at a frequency of 1 Hz and generates an interrupt (sc_it) when a short circuit is detected.

The scheme compares the LDO output voltage to a reference voltage and detects a short circuit if the LDO voltage drops below this reference value (0.5 or 0.75 V programmable). In the case of the VRUSB3V1 and VRUSB1V8 LDOs, the reference is compared with a divided-down voltage (1.5 V typical).

If a short circuit is detected on VRUSB3V1, the power subchip FSM switches this LDO to sleep mode.

If a short circuit is detected on VRUSB1V8 or VRUSB1V5, the power subchip FSM switches off the relevant LDO.

5.1.2 Power References

The bandgap voltage reference is filtered (resistance/capacitance [RC] filter) using an external capacitor connected across the VREF output and an analog ground (REFGND). The VREF voltage is scaled, distributed, and buffered in the device. The bandgap is started in fast mode (not filtered), and is set automatically by the D machine in slow mode (filtered, less noisy) when required.

Table 5-18 lists the characteristics of the voltage references.

Table 5-18 Voltage Reference Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Condition
	Filtering capacitor	Connected from V_REF to REFGND	0.3	1	2.7	μF
Electrical Characteristics
V_IN	Input voltage	On mode	2.7	3.6	4.5	V
	Internal bandgap reference voltage	On mode, measured through TESTV terminal	1.272	1.285	1.298	V
	Reference voltage (V_REF terminal)	On mode	0.725	0.75	0.7575	V
	Retention mode reference	On mode	0.492	0.5	0.508	V
	I_REF NMOS sink		0.9	1	1.1	µA
	Ground current	Bandgap IREF block Preregulator VREF buffer Retention reference buffer			25 20 15 10 10	µA
	Output spot noise	100 Hz			1	µV/√Hz
	A-weighted noise (rms)			200		nV (ms)
	P-weighted noise (rms)			150		nV (ms)
	Integrated noise	20 Hz to 100 kHz		2.2		µV
	I_BIAS trim bit LSB				0.1	µA
	Ripple rejection	< 1 MHz from VBAT	60			dB
	Start-up time				1	ms

5.1.3 Power Control

5.1.3.1 Backup Battery Charger

If the backup battery is rechargeable, it can be recharged from the main battery. A programmable voltage regulator powered by the main battery allows recharging of the backup battery. The backup battery charge must be enabled using a control bit register. Recharging starts when two conditions are met:

Main battery voltage > backup battery voltage
Main battery > 3.2 V

The comparators of the backup battery system (BBS) give the two thresholds of the backup battery charge startup. The programmed voltage for the charger gives the end-of-charge threshold. The programmed current for the charger gives the charge current.

Overcharging is prevented by measurement of the backup battery voltage through the GP ADC. Table 5-19 lists the characteristics of the backup battery charger.

Table 5-19 Backup Battery Charger Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
VBACKUP-to-MADC input attenuation	VBACKUP from 1.8 to 3.3 V		0.33		V/V
Backup battery charging current	VBACKUP = 2.8 V, BBCHEN = 1, BBISEL = 00	10	25	45	μA
	VBACKUP = 2.8 V, BBCHEN = 1, BBISEL = 01	105	150	270	μA
	VBACKUP = 2.8 V, BBCHEN = 1, BBISEL = 10	350	500	900	μA
	VBACKUP = 2.8 V, BBCHEN = 1, BBISEL = 11	0.7	1	1.8	mA
	VBACKUP = 0 V, BBCHEN = 1, BBISEL = 00	17.5	25	45	μA
	VBACKUP = 0 V, BBCHEN = 1, BBISEL = 01	105	150	270	μA
	VBACKUP = 0 V, BBCHEN = 1, BBISEL = 10	350	500	900	μA
	VBACKUP = 0 V, BBCHEN = 1, BBISEL = 11	0.7	1	1.8	mA
End backup battery charging voltage: VBBCHGEND	I_VBACKUP = –10 μA, BBSEL = 00	2.4	2.5	2.6	V
	I_VBACKUP = –10 μA, BBSEL = 01	2.9	3.0	3.1	V
	I_VBACKUP = –10 μA, BBSEL = 10	3.0	3.1	3.2	V
	I_VBACKUP = –10 μA, BBSEL = 11	3.1	3.2	3.3	V

5.1.3.2 Battery Monitoring and Threshold Detection

5.1.3.2.1 Power On/Power Off and Backup Conditions

Table 5-20 lists the threshold levels of the battery.

Table 5-20 Battery Threshold Levels

Parameter	Test Conditions	Min	Typ	Max	Unit
Main battery charged threshold VMBCH	Measured on VBAT terminal	3.1	3.2	3.3	V
Main battery low threshold VMBLO	VBACKUP = 3.2 V, measured on VBAT terminal (monitored on terminal ONNOFF)	2.55	2.7	2.85	V
Main battery high threshold VMBHI	Measured on terminal VBAT, VBACKUP = 0 V Measured on terminal VBAT, VBACKUP = 3.2 V	2.5 2.5	2.65 2.85	2.95 2.95	V
Batteries not present threshold VBNPR	Measured on terminal VBACKUP with VBAT < 2.1 V Measured on terminal VBAT with VBACKUP = 0 V (monitored on terminal VRRTC)	1.6 1.95	1.8 2.1	2.0 2.25	V

5.1.3.3 VRRTC LDO Regulator

The VRRTC voltage regulator is a programmable, low dropout, linear voltage regulator supplying (1.5 V) the embedded real-time clock (32.768-kHz oscillator) and dedicated I/Os of the digital host counterpart. The VRRTC regulator is also the supply voltage of the power-management digital state-machine. The VRRTC regulator is supplied from the UPR line, switched on by the main or backup battery, depending on the system state. The VRRTC output is present as long as a valid energy source is present. The VRRTC line is supplied by an LDO when VBAT > 2.7, and a clamp circuit when in backup mode. Table 5-21 describes the regulator characteristics.

Table 5-21 VRRTC LDO Regulator Characteristics

Parameter		Test Conditions	Min	Typ	Max	Unit
Output Load Conditions
	Filtering capacitor	Connected from VRTC.OUT to analog ground	0.3	1	2.7	μF
	Filtering capacitor ESR		20		600	mΩ
Electrical Characteristics
V_IN	Input voltage	On mode	2.7	VBAT	4.5	V
V_OUT	Output voltage	On mode	1.45	1.5	1.55	V
I_OUT	Rated output current	On mode			30	mA
I_OUT	Rated output current	Sleep mode			1	mA
	DC load regulation	On mode: I_OUT= I_OUTmax to 0			100	mV
	DC line regulation	On mode, V_IN = V_INmin to V_INmax at I_OUT = I_OUTmax			100	mV
	Turn-on time	I_OUT = 0, at V_OUT = V_OUTfinal ± 3%		100		μs
	Wake-up time	On mode from low power to On mode, I_OUT = 0, at V_OUT = V_OUTfinal ± 3%		100		μs
	Wake-up time	From backup to On mode, I_OUT = 0, at V_OUT = V_OUTfinal ± 3%		100		μs
	Ripple rejection (VRRTC)	f < 10 kHz	50			dB
		10 kHz < f < 100 kHz	40
		f = 1 MHz	30
		V_IN = V_OUT + 1 V, I_O = I_MAX
	Ground current	On mode, I_OUT = 0			70	μA
		On mode, I_OUT = I_OUTmax			100
		Sleep mode, I_OUT = 0			10
		Sleep mode, I_OUT = 1 mA			11
		Off mode			1
V_DO	Dropout voltage⁽¹⁾	On mode, I_OUT = I_OUTmax			250	mV
	Transient load regulation	I_LOAD: I_MIN – I_MAX Slew: 40 mA/μs	–40		40	mV
	Transient line regulation	V_IN drops 500 mV Slew: 40 mV/μs			10	mV
	Overshoot	Softstart			3%
	Pull down resistance	Default in off mode	250	320	450	Ω

(1) For nominal output voltage

5.1.4 Power Consumption

Table 5-22 describes the power consumption, depending on the use cases.

NOTE

Typical power consumption is obtained in nominal operating conditions with the TPS65950 in stand-alone mode.

Table 5-22 Power Consumption

Mode	Description		Typical Consumption
Backup	Only the RTC date is maintained with a couple of registers in the backup domain. No main source is connected. Consumption is on the backup battery.	VBAT not present	2.25 * 3.2 = 7.2 μW
Wait-on	The phone is apparently off for the user, a main battery is present and well-charged. The RTC registers (registers in the backup domain) are maintained. Wake-up capabilities (like the PWRON button) are available.	VBAT = 3.8 V	64 * 3.8 = 243.2 μW
Active No Load	The subsystem is powered by the main battery, all supplies are enabled with full current capability, internal reset is released, and the associated processor is running.	VBAT = 3.8 V	3291 * 3.8 = 12505 μW
Sleep No Load	The main battery powers the subsystem, selected supplies are enabled but in low-consumption mode, and the associated processor is in low-power mode.	VBAT = 3.8 V	496 * 3.8 = 1884.4 μW

Table 5-23 lists the regulator states for each mode.

Table 5-23 Regulator States Depending on Use Cases

Regulator	Mode
Regulator	Backup	Wait-On	Sleep No Load	Active No Load
VAUX1	OFF	OFF	OFF	OFF
VAUX2	OFF	OFF	SLEEP	ON
VAUX3	OFF	OFF	OFF	OFF
VAUX4	OFF	OFF	SLEEP	ON
VMMC1	OFF	OFF	OFF	OFF
VMMC2	OFF	OFF	SLEEP	ON
VPLL1	OFF	OFF	SLEEP	ON
VPLL2	OFF	OFF	SLEEP	ON
VSIM	OFF	OFF	OFF	OFF
VDAC	OFF	OFF	OFF	OFF
VINTANA1	OFF	OFF	SLEEP	ON
VINTANA2	OFF	OFF	SLEEP	ON
VINTDIG	OFF	OFF	SLEEP	ON
VIO	OFF	OFF	SLEEP	ON
VDD1	OFF	OFF	SLEEP	ON
VDD2	OFF	OFF	SLEEP	ON
VUSB_1V5	OFF	OFF	OFF	OFF
VUSB_1V8	OFF	OFF	OFF	OFF
VUSB_3V1	OFF	OFF	SLEEP	SLEEP

5.1.5 Power Management

5.1.5.1 Boot Modes

The modes corresponding to the BOOT0–BOOT1 combination value are listed in Table 5-24.

Table 5-24 BOOT Mode Description

Name	Description	BOOT0	BOOT1
	Reserved	0	0
MC027	Master_C027_Generic 01	0	1
MC021	Master_C021_Generic 10	1	0
SC021	Slave_C021_Generic 11	1	1

5.1.5.2 Process Modes

The process modes parameter defines:

The boot voltage for the host core
The boot sequence associated with the process
The dynamic voltage and frequency scaling (DVFS) protocol associated with the process

5.1.5.2.1 C027.0 Mode

Table 5-25 lists the parameters for C027.0 mode.

Table 5-25 C027.0 Mode Description

Boot core voltage	1.3 V
Power sequence	VIO followed by VDD1 and VPLL
DVFS protocol	VMODE1/2

5.1.5.2.2 C021.M Mode

Table 5-26 lists the parameters for C021.M mode.

Table 5-26 C021.M Mode Description

Boot core voltage	1.2 V
Power sequence	VIO followed by VPLL1, VDD2, VDD1
DVFS protocol	SmartReflex IF (I²C high speed)

5.1.5.3 Power-On Sequence

5.1.5.3.1 Timings Before Sequence_Start

The starting time of the power-on sequence relative to external events is shown in Figure 5-8.

Figure 5-8 Timings Before Sequence Start

5.1.5.3.2 OMAP2 Power-On Sequence

Figure 5-9 shows the timing and control that must occur in Master_C027_Generic mode. Sequence_Start occurs according to the events shown in Figure 5-8.

Figure 5-9 Timings—OMAP2 Power-On Sequence

5.1.5.3.3 OMAP3 Power-On Sequence

Figure 5-10 shows the timing and control that must occur in Master_C021_Generic mode. Sequence_Start occurs according to the events shown in Figure 5-8.

Figure 5-10 Timings—OMAP3 Power-On Sequence

5.1.5.3.4 Power On in Slave_C021_Generic Mode

Figure 5-11 describes the timing and control that must occur in the Slave_C021_Generic mode. Sequence_Start is a symbolic internal signal to ease the description of the power sequences and occurs according to the different events detailed in Figure 5-8.

Figure 5-11 Timings—Power On in Slave_C021_Generic Model

5.1.5.4 Power-Off Sequence

This section describes the signal behavior required to power down the system.

5.1.5.4.1 Power-Off Sequence in Master Modes

Figure 5-12 shows the timing and control that occur during the power-off sequence in master modes.

All timings are typical values with the default setup (depending on the resynchronization between power domains, state machinery priority, etc.).

Figure 5-12 Power-Off Sequence in Master Modes

If the value of the HF clock is not 19.2 MHz (with the values of the CFG_BOOT HFCLK_FREQ bit field set accordingly), the delay between DEVOFF and NRESPWRON/CLK32KOUT/SYSEN/HFCLKOUT is divided by two (approximately 9 μs). This is caused by the internal frequency used by power STM switching from 3 to 1.5 MHz if the HF clock value is 19.2 MHz.

The DEVOFF event is PWRON falling edge in slave mode and DEVOFF internal register write in master mode.

5.2 Real-Time Clock and Embedded Power Controller

The TPS65950 device contains an RTC to provide clock and timekeeping functions and an EPC to provide battery supervision and control.

5.2.1 RTC

The RTC provides the following basic functions:

Time information (seconds/minutes/hours) directly in binary-coded decimal (BCD) code
Calendar information (day/month/year/day of the week) directly in BCD code
Interrupt generation periodically (1 second/1 minute/1 hour/1 day) or at a precise time (alarm function)
32-kHz oscillator drift compensation and time correction
Alarm-triggered system wake-up event

5.2.1.1 Backup Battery

The TPS65950 implements a backup mode in which a backup battery can keep the RTC running to maintain clock and time information even if the main supply is not present. If the backup battery is rechargeable, the device also provides a backup battery charger so it can be recharged when the main battery supply is present.

The backup domain powers the following:

Internal 32.768-kHz crystal oscillator
RTC
Eight GP storage registers
Backup domain low-power regulator (VBRTC)

5.2.2 EPC

The EPC provides five system states for optimal power use by the system, as listed in Table 5-27.

Table 5-27 System States

System State	Description
NO SUPPLY	The system is not powered by any battery.
BACKUP	The system is powered only with the backup battery and maintains only the VBRTC supply.
WAIT-ON	The system is powered by the main battery and maintains only the VRRTC supply. It can accept switch-on requests.
ACTIVE	The system is powered by the main battery; all supplies can be enabled with full current capability.
SLEEP	The main battery powers the system; selected supplies are enabled, but in low consumption mode.

Three categories of events can trigger state transitions:

Hardware events: Supply/battery insertion, wake-up requests, USB plug, and RTC alarm
Software events: Switch-off commands, switch-on commands, and sleep-on commands
Monitoring events: Supply/battery level check, main battery removal, main battery fail, and thermal shutdown

5.3 Audio/Voice Module

The audio codec in the device includes five DACs and two ADCs to provide multiple voice channels and stereo downlink channels that can support all standard audio sample rates through I2S/TDM format interfaces. The audio output stages on the device include stereo headset amplifiers, two integrated class-D amplifiers providing stereo differential outputs, predrivers for line outputs, and an earpiece amplifier. The input audio stages include three differential microphone inputs, stereo line inputs, and interface for digital micrphones. Automatic and programmable gain control is available with all necessary digital filtering, side-tone functions, and pop-noise reduction.

Figure 5-13 is a block diagram of the audio/voice module.

Figure 5-13 Audio/Voice Module Block Diagram

5.3.1 Audio/Voice Downlink (RX) Module

The audio/voice module includes the following output stages:

Mono/stereo single-ended headset amplifier
Stereo differential integrated class-D 8-Ω hands-free amplifiers
Predriver output signals for external class-D amplifiers (single-ended)
Mono differential earpiece amplifier
Vibrator H-bridge

5.3.1.1 Earphone Output

5.3.1.1.1 Earphone Output Characteristics

Analog signals from the audio and/or voice interface are fed to the earphone amplifier. This amplifier, with different gains, provides a full differential signal on terminals EARP and EARM. Figure 5-14 shows the earphone amplifier. Table 5-28 lists the output characterstics of the earphone amplifier.

Figure 5-14 Earphone Amplifier

Table 5-28 Earphone Amplifier Output Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Differential load impedance		26	32		Ω
		100	100		pF
Gain range ⁽²⁾	Audio path	–86		36	dB
	Voice path	–60		36
Absolute gain error		–1		1	dB
Maximum output power	At 1.4 Vrms differential output voltage Load impedance = 32 Ω		61.25		mW
Peak-to-peak differential output voltage (0 dBFs)	Default gain ⁽¹⁾		4.0		V_PP
Total harmonic distortion	At 0 dBFs		–65	–60	dB
Default gain ⁽¹⁾	At –6 dBFs		–70	–65
Load impedance = 32 Ω	At –20 dBFs			–60
	At –60 dBFs			–30
Idle channel noise (20 Hz to 20 kHz, A-weighted)	Gain = 0 dB Load = 32 Ω		–90	–85	dBFs
Output PSRR (for all gains)	20 Hz to 4 kHz		90		dB
	20 Hz to 20 kHz		70		dB

(1) The default gain setting assumes the ARXPGA has 2-dB gain setting (volume control) and output driver at 6-dB gain setting.

(2) Audio digital filter = –62 to 0 dB (1-dB steps) and 0 to 12 dB (6-dB steps)
Voice digital filter = –36 to 12 dB (1-dB steps)
ARXPGA (volume control) = –24 to 12 dB (2-dB steps)
Output driver = 0, 6, 12 dB

5.3.1.1.2 External Components and Application Schematic

Figure 5-15 is a simplified schematic of the earphone speaker.

Figure 5-15 Earphone Speaker

NOTE

For the component values, see Table 5-92.

5.3.1.2 8-Ω Stereo Hands-Free

The digital signal from the audio and/or voice interface is fed to two class-D amplifiers. These 8-Ω speaker amplifiers provide a stereo differential signal on terminal pairs (IHF.RIGHT.P, IHF.RIGHT.M and IHF.LEFT.P, IHF.LEFT.M).

5.3.1.2.1 8-Ω Stereo Hands-Free Output Characteristics

Figure 5-16 shows the 8-Ω stereo hands-free amplifier. Table 5-29 lists the output characteristics of the 8-Ω stereo hands-free amplifier.

Figure 5-16 8-Ω Stereo Hands-Free Amplifiers

Table 5-29 8-Ω Stereo Hands-Free Output Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
VBAT voltage		3.0	3.6	4.6	V
Load impedance		6	8		Ω
Gain range⁽¹⁾	Audio path	–75.6		34.4	dB
	Voice path	–49.6		34.4
Absolute gain error		–1		1	dB
Maximum output power (load impedance = 8 Ω)	VBAT > 3.6 V		400		mW
	VBAT > 4.0 V		700
Peak-to-peak differential output voltage	VBAT > 3.6 V (0 dBFs)		5.0		V_PP
	VBAT > 4.0 V (2 dBFs)		6.25
Total harmonic distortion (load impedance = 8 Ω, gain setting = 0 dB) (VBAT > 3.6 V)	At 0 dBFs		–60	–40	dBFs
	At –10 dBFs			–60
	At –20 dBFs			–45
	At –60 dBFs			–20
Total harmonic distortion (load impedance = 8 Ω, (VBAT > 4.2 V)	2 dBFs		–60	–40	dB
Idle channel noise (20 Hz to 20 kHz)	0 dB gain		–88		dBFs
PSRR (input signal 1 kHz sine, 300 mVPP GSM ripple at 217 Hz with 10-μs rise/fall times, at 12.5% duty cycle)	From VBAT	75	80		dB
Efficiency	Power on load = 400 mW Load impedance = 8 Ω	70%
Power dissipation	Power on load = 400 mW Load impedance = 8 Ω			175	mW
Idle current consumption on VBAT	Without input signal		6		mA
Clock frequency for the ramp generation		384		426.6	kHz
I_DDQ current	At 25°C		0.6		μA

(1) Audio digital filter = –62 to 0 dB (1-dB steps) and 0 to 12 dB (6-dB steps)
Voice digital filter = –36 to 12 dB (1-dB steps)
ARXPGA (volume control) = –24 to 12 dB (2-dB steps)
Output driver = 10.4 dB

5.3.1.2.1.1 Short-Circuit Protection

There is short-circuit protection for hands-free amplifiers to limit power dissipation to 1.2 W. The short-circuit protection can be disabled by register. If a short circuit is detected, the short-circuit detection block switches off the hands-free speaker output stages. A software restart is required to restart the class-D amplifier.

5.3.1.2.2 External Components and Application Schematic

Figure 5-17 is a simplified schematic of the 8-Ω stereo hands-free.

Figure 5-17 8-Ω Stereo Hands-Free

NOTE

For the component values, see Table 5-92.

For ferrite bead, choose one with high impedance at high frequencies, but with very low impedance at low frequencies. For example, MPZ1608S221A (recommended), N2012ZPS121, or MDP BKP1608HS271.

5.3.1.3 Headset

The analog signal from the audio and/or voice interface is fed to two single-ended headset amplifiers.

There are two configurations:

Stereo single-ended mode: Left and right headset amplifiers with different gains (–6, 0, 6 dB) provide the stereo signal on the HSOL and HSOR terminals. A pseudo-ground is provided on the VMID terminal to eliminate external capacitors.
Stereo single-ended mode ac-coupled: Left and right headset amplifiers with different gains (–6, 0, 6 dB) provide the stereo signal on the HSOL and HSOR terminals. The external capacitor is required to eliminate the dc component of the signal.

5.3.1.3.1 Headset Output Characteristics

Figure 5-18 shows the headset amplifier. Table 5-30 lists the output characteristics of the headset amplifier.

Figure 5-18 Headset Amplifier

Table 5-30 Headset Output Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Load impedance		14	16		Ω
		100	100		pF
Gain range ⁽²⁾	Audio path	–92		30	dB
	Voice path	–66		30
Absolute gain error		–1		1	dB
Maximum output power	At 0.53 Vrms differential output voltage Load impedance = 16 Ω		17.56		mW
Peak-to-peak output voltage (0 dBFs)	Default gain ⁽¹⁾		1.5		V_PP
Single-Ended Mode ac-Coupled
Total harmonic distortion	At 0 dBFs		–80	–75	dB
Default gain ⁽¹⁾	At –6 dBFs		–74	–69
Load = 16 Ω	At –20 dBFs		–70	–65
	At –60 dBFs		–30	–25
Idle channel noise (20 Hz to 20 kHz, A-weighted)	Default gain ⁽¹⁾ Load = 16 Ω		–90	–85	dB
SNR (A-weighted over 20-kHz bandwidth)	At 0 dBFs	82	86		dB
Output PSRR (for all gains)	20 Hz to 4 kHz		90		dB
	20 Hz to 20 kHz		70
Crosstalk between right and left channels			–60		dB
Single-Ended Mode (Pseudo-Ground Provided on HSOVMID)
Total harmonic distortion	At 0 dBFs		–75	–70	dB
Default gain ⁽¹⁾	At –6 dBFs		–74	–69
Load = 16 Ω	At –20 dBFs		–70	–65
	At –60 dBFs		–30	–25
Idle channel noise (20 Hz to 20 kHz, A-weighted)	Default gain ⁽¹⁾ Load = 16 Ω		–90	–85	dB
Output PSRR (for all gains)	20 Hz to 4 kHz		85		dB
	20 Hz to 20 kHz		65		dB

(1) The default gain setting assumes the ARXPGA has 0 dB gain setting (volume control) and output driver at 0 dB gain setting.

5.3.1.3.2 External Components and Application Schematic

Figure 5-19 is a schematic of a headset 4-wire stereo jack without an external FET. Table 5-31 lists the output characteristics of this configuration.

Figure 5-19 Headset 4-Wire Stereo Jack Without an External FET

Table 5-31 Output Characteristics of a Headset 4-Wire Stereo Jack Without an External FET

Parameter	Test Conditions		Min	Typ	Max	Unit
Rsb	Cb < 200 pF		0			Ω
	Cb = 100 nF		300
	Cb = 1 μF		500
Rb + Rsb			2.2		2.7	kΩ
Cs The input capacitors and output resistors form a high-pass filter (HPF) with the corner frequency = 1/(2πR_out/Cs)			22	47		μF
	R_L	C_L
Rs required to ensure	16 to 32 Ω	<100 pF	0			Ω
HS amplifier stability	16 to 32 Ω	1 nF	4
	16 Ω	2 nF	8
	24 Ω		12
	32 Ω		18
	16 Ω	3 nF	12
	24 Ω		20
	32 Ω		24
	16 Ω	4 nF	16
	24 Ω		24
	32 Ω		32
	16 Ω	5 nF	20
	24 Ω		28
	32 Ω		36

NOTE

For other component values, see Table 5-92.

Table 5-32 is a schematic of a headset 4-wire stereo jack with an external FET. Table 5-32 lists the output characteristics of this configuration.

Figure 5-20 Headset 4-Wire Stereo Jack With an External FET

Table 5-32 Output Characteristics of a Headset 4-Wire Stereo Jack With an External FET

Parameter	Test Conditions		Min	Typ	Max	Unit
Rsb	Cb < 200 pF		0			Ω
	Cb = 100 nF		300
	Cb = 1 μF		500
Rb + Rsb			2.2		2.7	kΩ
Cs The input capacitors and output resistors form a HPF with the corner frequency = 1/(2πR_out/Cs)			22	47		μF
	R_L	C_L
Rs required to ensure HS amplifier stability and no distortion caused by the parasitic diode of the external FET	16 Ω	<2 nF	10			Ω
	24 Ω		15
	32 Ω		20
	16 Ω	3 nF	12
	24 Ω		20
	32 Ω		24
	16 Ω	4 nF	16
	24 Ω		24
	32 Ω		32
	16 Ω	5 nF	20
	24 Ω		28
	32 Ω		36

NOTE

For other component values, see Table 5-92.

Figure 5-21 is a schematic of a headset 5-wire stereo jack. Table 5-33 lists the output characteristics of this configuration.

Figure 5-21 Headset 5-Wire Stereo Jack

Table 5-33 Output Characteristics of a Headset 5-Wire Stereo Jack

Parameter	Test Conditions		Min	Max	Unit
Rsb	Cb < 200 pF		0		Ω
	Cb = 100 nF		300
	Cb = 1 μF		500
Rb + Rsb			2.2	2.7	kΩ
	R_L	C_L
Rs required to ensure HS amplifier stability	16 to 32 Ω	<100 pF	0		Ω
	16 to 32 Ω	1 nF	4
	16 Ω	2 nF	8
	24 Ω		12
	32 Ω		18
	16 Ω	3 nF	12
	24 Ω		20
	32 Ω		24
	16 Ω	4 nF	16
	24 Ω		24
	32 Ω		32
	16 Ω	5 nF	20
	24 Ω		28
	32 Ω		36

NOTE

For other component values, see Table 5-92.

Figure 5-22 is a schematic of a headset 4-wire stereo jack optimized.

Figure 5-22 Headset 4-Wire Stereo Jack Optimized

NOTE

For other component values, see Table 5-92.

5.3.1.4 Headset Pop-Noise Attenuation

Pop noise occurs when the audio output amplifier is switched on. Although the speaker is ac-coupled through an external capacitor, the sharp rise time given by the activation of the amplifier causes a large spike to propagate to the speakers. Pop attenuation is achieved through a precharge and discharge of the external coupling capacitor.

The antipop system using an internal current generator controlling the ramp of charge or discharge is implemented for the headset output. The pop-noise effect can be dramatically reduced by an external FET controlled by a 1.8-V output signal (MUTE pin).

Figure 5-23 is a diagram of headset pop noise. Table 5-34 lists the characteristics of headset pop noise.

Figure 5-23 Headset Pop-Noise Cancellation Diagram

Table 5-34 Headset Pop-Noise Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
dv/dt	Ramp of charge or discharge			170	V/s
Pop-noise (A-weighted)	ac-coupling capacitor = 47 μF Serial resistor = 33 Ω External FET: Rdson = 0.12 Ω			1	mV

5.3.1.5 Predriver for External Class-D Amplifier

Two predriver amplifiers provide a stereo signal on the PreD.LEFT and PreD.RIGHT terminals to drive an external class-D amplifier. These terminals are available if a stereo, single-ended, ac-coupled headset is used.

5.3.1.5.1 Predriver Output Characteristics

Table 5-35 lists the output characteristics of the predriver.

Table 5-35 Predriver Output Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Load impedance		10			kΩ
		50			pF
Gain range ⁽²⁾	Audio path	–92		30	dB
	Voice path	–66		30
Absolute gain error		–1		1	dB
Peak-to-peak output voltage (0 dBFs)	Default gain ⁽¹⁾		1.5		V_PP
Total harmonic distortion	At 0 dBFs		–80	–75	dB
Default gain ⁽¹⁾	At –6 dBFs		–74	–69
Load > 10 kΩ // 50 pF	At –20 dBFs		–70	–65
	At –60 dBFs		–30	–25
Idle channel noise (20 Hz to 20 kHz, A-weighted)	Default gain ⁽¹⁾ Load = 10 Ω		–90	–85	dB
SNR (A-weighted over 20-kHz bandwidth)	At 0 dBFs	83	88		dB
Default gain⁽¹⁾	At –60 dBFS		30
Output PSRR (for all gains)	20 Hz to 4 kHz		90		dB
	20 Hz to 20 kHz		70

(1) The default gain setting assumes the ARXPGA has a 0 dB gain setting (volume control) and output driver has a 0 dB gain setting.

5.3.1.5.2 External Components and Application Schematic

Figure 5-24 is a simplified schematic of the external class-D predriver.

Figure 5-24 Predriver for External Class D

In Figure 5-24, input resistor (R_PR or R_PL) sets the gain of the external class D. For TPS2010D1, the gain is defined according to the following equation:

Gain (V/V) = 2*150*10³/(R_PR or R_PL)

R_PR or R_PL > 15 kΩ

NOTE

For other component values, see Table 5-92.

5.3.1.6 Vibrator H-Bridge

A digital signal from the pulse width modulated generator is fed to the vibrator H-bridge driver. The vibrator H-bridge is a differential driver that drives vibrator motors. The differential output allows dual rotation directions.

5.3.1.6.1 Vibrator H-Bridge Output Characteristics

Table 5-36 lists the output characteristics of the vibrator H-bridge.

Table 5-36 Vibrator H-Bridge Output Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
VBAT voltage		2.8	3.6	4.8	V
Differential output swing (16-Ω load)	VBAT = 2.8 V	3.6			V_PP
Differential output swing (16-Ω load)	VBAT = 3.5 V	4.3			V_PP
Output resistance (summed for both sides)				8	Ω
Load capacitance				100	pF
Load resistance		8	16	60	Ω
Load inductance			30	300	μH
Total harmonic distortion				10%
Operating frequency		20		10k	Hz

5.3.1.6.2 External Components and Application Schematic

Figure 5-25 is a simplified schematic of the vibrator H-bridge.

Figure 5-25 Vibrator H-Bridge

NOTE

For other component values, see Table 5-92.

Example of ferrite: BLM 18BD221SN1.

5.3.1.7 Carkit Output

The USB-CEA carkit uses the DP/DM pad to output audio signals (see the CEA-936A: Mini-USB Analog Carkit Interface Specification).

The MCPC carkit uses the RXAF analog pad to output audio signals.

Figure 5-26 shows the carkit output downlink full path characteristics for audio and USB.

Figure 5-26 Carkit Output Downlink Path Characteristics

Table 5-37 lists the electrical characteristics of the MCPC and USB-CEA carkit audio.

Table 5-37 MCPC and USB-CEA Carkit Audio Downlink Electrical Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Output load	USB-CEA (DP/DM)	20			kΩ
Output load	MCPC (RXAF)	5			kΩ
Gain range⁽²⁾	Audio path	–92		30	dB
Gain range⁽²⁾	Voice path	–66		30	dB
Absolute gain error	At 1 kHz	–1		1	dB
Peak-to-peak differential output voltage (0 dBFs)	Gain = 0 dB		1.5		V_PP
Total harmonic distortion	At 0 dBFs		–80	–75	dB
	At –6 dBFs		–74	–69
	At –20 dBFs		–70	–65
	At –60 dBFs		–30	–25
THD+N (20 Hz to 20 kHz, A-weighted)	At 0 dBFs		60		dB
Idle channel noise (20 Hz to 20 kHz, A-weighted), default gain setting⁽¹⁾	USB-CEA		–77		dBFs
	MCPC		–80	–77	dBFs
Output PSRR	20 Hz to 20 kHz		60		dB
Supply voltage (VINTANA1)			1.5		V
Common mode output voltage for USB-CEA		1.3	1.35	1.4	V
Isolation between D+/D– during audio mode (20 Hz to 20 kHz)		60			dB
Crosstalk between right and left channels	USB-CEA stereo		–90		dB
Crosstalk RX/TX (1 V_PP output)	USB-CEA mono/stereo			–60	dB
Crosstalk RX/TX (1 V_PP output)	MCPC			–65	dB
Signal noise ratio (20 Hz to 20 kHz, A-weighted)	At 0 dBFs		60		dB
Phone speaker amplifier output impedance at 1 kHz	USB-CEA (DP/DM)			200	Ω
Phone speaker amplifier output impedance at 1 kHz	MCPC (RXAF)			200	Ω

(1) The default gain setting assumes the ARXPGA has 0-dB gain setting (volume control) and output driver at 0.6-dB gain setting.

(2) Audio digital filter = –62 to 0 dB (1-dB steps) and 0 to 12 dB (6-dB steps);
Voice digital filter = –36 to 12 dB (1-dB steps);
ARXPGA (volume control) = –24 to 12 dB (2-dB steps);
Output driver (USB-CEA and MCPC) = –1 dB

5.3.1.8 Digital Audio Filter Module

Figure 5-27 shows the digital audio filter downlink full path characteristics of the audio interface.

Figure 5-27 Digital Audio Filter Downlink Path Characteristics

The HPF can be bypassed.

Table 5-38 lists the audio filter frequency responses relative to reference gain at 1 kHz.

Table 5-38 Digital Audio Filter RX Electrical Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Passband			0.42		F_S
Passband ripple	0 to 0.42F_S⁽¹⁾	–0.25	0.1	0.25	dB
Stopband			0.6		F_S
Stopband attenuation	F = 0.6F_S⁽¹⁾ to 0.8F_S⁽¹⁾	60	75		dB
Group delay			15.8/F_S⁽¹⁾		μs
Linear phase		–1.4		1.4	°

(1) F_S is the sampling frequency (8, 11.025, 12, 16, 22.05, 24, 32, 44.1, or 48 kHz).

5.3.1.9 Digital Voice Filter Module

Figure 5-28 shows the digital voice filter downlink full path characteristics of the voice interface.

Figure 5-28 Digital Voice Filter Downlink Path Characteristics

The global HPF or only the third-order HPF can be bypassed (when the third-order HPF is skipped, the first-order HPF remains active).

5.3.1.9.1 Voice Downlink Filter (Sampling Frequency at 8 kHz)

Figure 5-29 shows the voice downlink frequency response with F_S = 8 kHz. Table 5-39 lists the voice filter frequency responses relative to the reference gain at 1 kHz with F_S = 8 kHz.

Figure 5-29 Voice Downlink Frequency Response With F_S = 8 kHz

Table 5-39 Digital Voice Filter RX Electrical Characteristics With F_S = 8 kHz

Parameter	Test Conditions	Min	Typ	Max	Unit
Frequency response relative to reference gain at 1 kHz (first-order HPF)	100 Hz			–20	dB
	200 Hz	–8		–0.5
	300 to 3300 Hz	–0.5	0	0.5
	3400 Hz	–1.5	0	0.1
	4000 Hz			–17
	4600 Hz			–40
	> 6000 Hz			–45
Pole when third-order HPF is disabled (first-order HPF)			2.5		Hz
Group delay			0.5		ms

5.3.1.9.2 Voice Downlink Filter (Sampling Frequency at 16 kHz)

Figure 5-30 shows the voice downlink frequency response with F_S = 16 kHz. Table 5-40 lists the voice filter frequency responses relative to the reference gain at 1 kHz with F_S = 16 kHz.

Figure 5-30 Voice Downlink Frequency Response With F_S = 16 kHz

Table 5-40 Digital Voice Filter RX Electrical Characteristics With F_S = 16 kHz

Parameter	Test Conditions	Min	Typ	Max	Unit
Frequency response relative to reference gain at 1 kHz (first-order HPF)	300 to 6600 Hz	–0.5	0	0.5	dB
	6800 Hz	–1.5	0	0.1
	8000 Hz			–17
	9200 Hz			–40
	> 12000 Hz			–45
Pole when third-order HPF is disabled (first-order HPF)			5		Hz

5.3.1.10 Boost Stage

The boost effect adds emphasis to low frequencies. It compensates for an HPF created by the capacitance resistor (CR) filter of the headset (in ac-coupling configuration).

There are four modes. Three effects are available, with slightly different frequency responses, and the fourth setting disables the boost effect:

Boost effect 1
Boost effect 2
Boost effect 3
Flat equalization: The boost effect is in bypass mode.

Table 5-41 and Table 5-42 list typical values according to frequency response versus input frequency and F_S frequency.

Table 5-41 Boost Electrical Characteristics Versus F_S Frequency (F_S ≤ 22.05 kHz)

Frequency (Hz)	F_S = 8 kHz			F_S = 11.025 kHz			F_S = 12 kHz			F_S = 16 kHz			F_S = 22.05 kHz			Unit
Frequency (Hz)	1	2	3	1	2	3	1	2	3	1	2	3	1	2	3	Unit
10	4.51	5.13	5.62	5.10	5.51	5.80	5.22	5.58	5.83	5.54	5.77	5.92	5.76	5.89	5.97	dB
12	4.08	4.83	5.46	4.80	5.32	5.71	4.95	5.41	5.76	5.36	5.66	5.87	5.65	5.83	5.94
15.2	3.43	4.32	5.18	4.28	4.97	5.54	4.47	5.11	5.61	5.03	5.47	5.79	5.45	5.71	5.90
18.2	2.91	3.86	4.89	3.82	4.63	5.36	4.04	4.80	5.45	4.71	5.26	5.69	5.24	5.59	5.84
20.5	2.56	3.53	4.65	3.49	4.37	5.21	3.72	4.56	5.32	4.45	5.09	5.60	5.06	5.49	5.79
29.4	1.62	2.49	3.78	2.45	3.42	4.57	2.68	3.74	4.73	3.51	4.39	5.24	4.35	5.02	5.59
39.7	1.05	1.71	2.93	1.67	2.55	3.84	1.88	2.80	4.06	2.66	3.63	4.72	3.67	4.45	5.27
50.4	0.71	1.20	2.26	1.17	1.91	3.17	1.33	2.13	3.41	2.01	2.95	4.19	2.89	3.85	4.88
60.3	0.51	0.92	1.79	0.89	1.49	2.65	1.00	1.68	2.89	1.57	2.43	3.72	2.39	3.35	4.52
76.7	0.32	0.61	1.26	0.59	1.05	1.99	0.69	1.18	2.22	1.11	1.79	3.04	1.76	2.66	3.94
97.5	0.20	0.39	0.87	0.38	0.70	1.43	0.44	0.79	1.62	0.75	1.27	2.36	1.24	2.00	3.28
131.5	0.12	0.21	0.50	0.20	0.39	0.88	0.25	0.47	1.02	0.42	0.78	1.59	0.75	1.30	2.41
157	0.08	0.15	0.36	0.15	0.28	0.65	0.17	0.33	0.75	0.31	0.57	1.22	0.55	0.99	1.93
200	0.05	0.09	0.22	0.09	0.17	0.41	0.11	0.21	0.49	0.19	0.37	0.82	0.36	0.66	1.38
240	0.03	0.06	0.15	0.06	0.12	0.29	0.07	0.14	0.35	0.14	0.26	0.60	0.25	0.48	1.04
304	0.02	0.04	0.09	0.04	0.07	0.18	0.04	0.09	0.22	0.08	0.16	0.38	0.16	0.30	0.70
463	0.00	0.01	0.03	0.01	0.03	0.07	0.02	0.04	0.09	0.03	0.07	0.17	0.07	0.13	0.32
704	0.00	0.00	0.01	0.00	0.01	0.03	0.01	0.01	0.03	0.01	0.03	0.07	0.03	0.06	0.14
1008	0.00	0.00	0.00	0.00	0.00	0.01	0.00	0.00	0.01	0.00	0.01	0.03	0.01	0.02	0.06
1444	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.01	0.02
2070	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.01
3770	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00

Table 5-42 Boost Electrical Characteristics Versus F_S Frequency (F_S ≥ 24 kHz)

Frequency (Hz)	F_S = 24 kHz			F_S = 32 kHz			F_S = 44.1 kHz			F_S = 48 kHz			F_S = 96 kHz			Unit
Frequency (Hz)	1	2	3	1	2	3	1	2	3	1	2	3	1	2	3	Unit
10	5.79	5.90	5.97	5.89	5.89	5.99	5.95	5.98	6.04	5.96	5.99	6.01	5.71	5.83	5.90	dB
12	5.70	5.85	5.95	5.84	5.84	5.98	5.92	5.97	6.03	5.94	5.98	6.00	5.54	5.68	5.81
15.2	5.53	5.76	5.91	5.73	5.73	5.96	5.87	5.94	6.02	5.89	5.95	5.99	5.40	5.57	5.73
18.2	5.35	5.65	5.87	5.62	5.62	5.93	5.80	5.90	6.00	5.83	5.93	5.98	5.28	5.48	5.68
20.5	5.19	5.56	5.83	5.52	5.52	5.91	5.74	5.87	5.99	5.78	5.90	5.97	5.19	5.42	5.64
29.4	4.55	5.18	5.64	5.10	5.07	5.79	5.51	5.75	5.94	5.57	5.79	5.92	4.87	5.18	5.48
39.7	3.81	4.62	5.37	4.52	4.52	5.64	5.12	5.53	5.85	5.26	5.59	5.84	4.47	4.91	5.30
50.4	3.14	4.06	5.02	3.94	3.95	5.43	4.69	5.27	5.72	4.88	5.37	5.73	4.08	4.63	5.11
60.3	2.62	3.51	4.69	3.46	3.54	5.21	4.30	5.00	5.59	4.49	5.13	5.62	3.72	4.37	4.95
76.7	1.97	2.90	4.15	2.76	2.76	4.78	3.68	4.52	5.34	3.91	4.70	5.40	3.18	3.92	4.67
97.5	1.41	2.22	3.51	2.10	2.09	4.27	2.99	3.94	4.99	3.24	4.15	5.07	2.59	3.41	4.33
131.5	0.88	1.49	2.65	1.40	1.40	3.49	2.15	3.10	4.35	2.38	3.35	4.51	1.86	2.69	3.75
157	0.65	1.13	2.15	1.04	1.04	2.96	1.70	2.58	3.90	1.90	2.82	4.08	1.47	2.24	3.35
200	0.41	0.76	1.55	0.70	0.70	2.28	1.19	1.93	3.23	1.35	2.15	3.44	1.03	1.68	2.77
240	0.30	0.55	1.18	0.50	0.50	1.81	0.89	1.51	2.71	1.02	1.70	2.92	0.77	1.31	2.32
304	0.18	0.35	0.80	0.33	0.32	1.27	0.58	1.04	2.05	0.68	1.19	2.24	0.51	0.90	1.75
463	0.08	0.16	0.37	0.14	0.14	0.64	0.27	0.50	1.12	0.31	0.58	1.25	0.23	0.43	0.95
704	0.03	0.06	0.16	0.06	0.06	0.29	0.12	0.23	0.56	0.14	0.27	0.62	0.10	0.20	0.46
1008	0.01	0.03	0.07	0.03	0.02	0.14	0.06	0.11	0.30	0.06	0.13	0.31	0.05	0.10	0.23
1444	0.00	0.01	0.03	0.01	0.01	0.06	0.03	0.05	0.16	0.03	0.06	0.15	0.02	0.05	0.11
2070	0.00	0.00	0.01	0.00	0.00	0.02	0.01	0.02	0.09	0.01	0.03	0.07	0.01	0.02	0.05
3770	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.00	0.04	0.00	0.00	0.01	0.00	0.00	0.01

5.3.2 Audio/Voice Uplink (TX) Module

The voice uplink path includes two input amplification stages dedicated to ten analog input terminals:

MIC_MAIN_P, MIC_MAIN_M (differential main handset input)
MIC_SUB_P, MIC_SUB_M (differential sub handset input)
HSMICP, HSMICM (differential headset input)
AUXL (common terminal: single-ended auxiliary/FM radio left channel input)
AUXR (common terminal: single-ended auxiliary/FM radio right channel input)
CEA carkit and MCPC transmit audio (TXAF) microphone through DINP/DINM pins

For all cases, only two analog input amplifiers can be used, because two ADCs are available.

The voice uplink path also includes two pulse density modulated (PDM) interfaces for digital microphones. Two stereo digital microphone interfaces are available.

The left and right FM channels can be connected to any audio output stage (for example, earpiece, headset speakers, etc.) through a connection matrix.

5.3.2.1 Microphone Bias Module

Three bias generators provide an external voltage of 2.2 V to bias the analog microphones (MICBIAS1, MICBIAS2, and HSMICBIAS terminals). The typical output current is 1 mA for each analog bias microphone.

Two bias generators can provide an external voltage of 1.8 V to bias digital microphones (DIGMIC_0 and DIGMIC_1). The typical output current is 5 mA for each digital bias microphone.

NOTE

One bias generator can bias two digital microphones at the same time; in this case, the typical output current is 10 mA.

Figure 5-31 shows the multiplexing for the analog and digital microphones.

Figure 5-31 Analog and Digital Microphone Multiplexing

5.3.2.1.1 Analog Microphone Bias Module Characteristics

Table 5-43 lists the characteristics of the analog microphone bias module.

Table 5-43 Analog Microphone Bias Module Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Bias voltage		2.15	2.2	2.25	V
Load current				1	mA
Output noise	P-weighted 20 Hz to 6.6 kHz			1.8	μV_RMS
External capacitor		0		200	pF
Internal resistance		50	60	70	kΩ

NOTE

If the value of the external capacitor is greater than 200 pF, the analog microphone bias becomes unstable. To stabilize it, a serial resistor must be added.

Table 5-44 lists the characteristics of the analog microphone bias module with a bias resistor.

Table 5-44 Characteristics of Analog Microphone Bias Module With a Bias Resistor

Parameter	Test Conditions	Min	Typ	Unit
R_SB	C_B < 200 pF	0		Ω
	C_B = 100 pF	300
	C_B = 1 μF	500
R_B + R_SB			2.2 to 2.7	kΩ

5.3.2.1.2 External Components and Application Schematic

Figure 5-32 and Figure 5-33 show the external components and application schematics for the analog microphone.

Figure 5-32 Analog Microphone Pseudodifferential

NOTE

For other component values, see Table 5-92.

Figure 5-33 Analog Microphone Differential

NOTE

For other component values, see Table 5-92.

NOTE

To improve the rejection, it is highly recommended to ensure that MICBIAS_GND is as clean as possible. This ground must be shared with AGND of TPS65950 and must not share with AVSS4, which is the ground used by RX class-AB output stages.

In differential mode, adding a low-pass filter (made by R_SB and C_B) is highly recommended if coupling between RX output stages and the microphone is too high (and there is not enough attenuation by the echo cancellation algorithm). The coupling can come from:

The internal TPS65950 coupling between MICBIAS.OUT voltage and RX output stages
Coupling noise between MICBIAS.GND and AVSS4

In pseudodifferential mode, the dynamic resistance of the microphone improves the rejection versus MICBIAS.OUT:

PSRR = 20*log((R_B + R_{Dyn_mic})/R_B)

5.3.2.1.3 Digital Microphone Bias Module Characteristics

Figure 5-34 is a block diagram of the digital microphone bias module.

Figure 5-34 Digital Microphone Bias Module Block Diagram

Table 5-45 and Table 5-46 list the characteristics of the digital microphone bias module.

Table 5-45 Digital Microphone Bias Module Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Bias voltage			1.8		V
Load current				10	mA
PSRR (from VBAT)	20 Hz to 6.6 kHz	60			dB
External capacitor		0.3	1	3.3	μF
ESR for capacitor	At 100 kHz	0.02		0.6	Ω

Table 5-46 Digital Microphone Bias Module Characteristics (2)

Parameter	Min	Typ	Max	Unit
Comparator high threshold		0.5*VDD_IO	0.7*VDD_IO
Comparator low threshold	0.3*VDD_IO	0.5*VDD_IO
Startup time			2	μs
DIG.MIC.0 (t_HOLD) from DIG.MIC.CLK0 edge	4			ns
DIG.MIC.1 (t_HOLD) from DIG.MIC.CLK1 edge	4			ns

Figure 5-35 is a timing diagram of the digital microphone bias module.

Figure 5-35 Digital Microphone Bias Module Timing Diagram

5.3.2.1.4 Silicon Microphone Characteristics

Based on silicon micro-electrical-mechanical system (MEMS) technology, the new microphone achieves the same acoustic and electrical properties as conventional microphones, but is more rugged and exhibits higher heat resistance. These properties offer designers greater flexibility and new opportunities to integrate microphones.

The silicon microphone is the integration of mechanical elements and electronics on a common silicon substrate through microfabrication technology.

The complementary metal oxide semiconductor (CMOS) MEMS microphone is more like an analog IC than a classic electric condenser microphone (ECM). It is powered as an IC with a direct connection to the power supply. The on-chip isolation between the power input and the rest of the system adds power supply rejection (PSR) to the component, making the CMOS MEMS microphone inherently more immune to power supply noise than an ECM and eliminating the need for additional filtering circuitry to keep the power supply line clean.

Figure 5-36 is a schematic of the silicon microphone module.

Figure 5-36 Silicon Microphone Module

Table 5-47 lists the characteristics of the silicon microphone module.

Table 5-47 Silicon Microphone Module Characteristics

Parameter	Test Conditions	Typ	Max	Unit
Bias voltage		2.2		V
Load current			1	mA
Output noise	P-weighted 20 Hz to 6.6 kHz		1.8	μV_RMS

NOTE

For other component values, see Table 5-92.

5.3.2.2 Stereo Differential Input

The stereo differential inputs (the MIC_MAIN_P and MIC_MAIN_M, and the MIC_SUB_P and MIC_SUB_M terminals) can be amplified by the microphone amplification stages. The amplification stage outputs are connected to the two ADC inputs.

5.3.2.3 Headset Differential Input

The headset differential inputs (the HSMICP and HSMICM terminals) can be amplified by the microphone amplification stage. The amplification stage outputs are connected to the ADC input.

5.3.2.4 FM Radio/Auxiliary Stereo Input

The auxiliary inputs AUXL/FML and AUXR/FMR can be used as the left and right stereo inputs, respectively, of the FM radio. In that case (because both input amplifiers are busy), the other input terminals are discarded and set to a high-impedance state. Both microphone amplification stages amplify the FM radio stereo signal. Both amplification stage outputs are connected to the ADC input. The left and right channel inputs of the FM radio can also be output through an audio output stage (mono output stage in case of mono input FM radio, stereo output stage in case of stereo input FM radio).

5.3.2.4.1 External Components

Figure 5-37 shows the external components of the auxiliary stereo input.

Figure 5-37 Audio Auxiliary Input

NOTE

For other component values, see Table 5-92.

5.3.2.5 PDM Interface for Digital Microphones

The PDM interface is used as digital microphone inputs; each microphone is directly connected to the TX filter decimator to extract the audio samples at the desired accuracy and sample rate. Each digital microphone is stereo (two paths). The digital microphone interface is DIG.MIC.CLK (clock input to the microphone) and DIG.MIC (PDM data output from the microphone). The appropriate frequency of DIG.MIC.CLK is generated by the audio PLL, and the ratio between DIG.MIC.CLK and the sample rate is 50 (see Figure 5-38). The PDM interface is available only when F_S = 48 kHz.

The data signal output is a 3-state output from the microphone. When a falling-edge DIG.MIC.CLK is detected, DIG.MIC is actively driven. When a rising DIG.MIC.CLK is detected, DIG.MIC is high impedance. The latter DIG.MIC.CLK half-cycle is reserved for stereo operation (the second microphone receives DIG.MIC.CLK inverted).

The Σ-Δ converter in the digital microphones produces PDM.

Digital microphone characteristics:

PDM clock rate 2.4 MHz
Fourth-order Σ-Δ converter in the microphone component

Figure 5-38 is an example of PDM interface circuitry.

Figure 5-38 Example of PDM Interface Circuitry

5.3.2.6 Uplink Characteristics

Figure 5-39 shows the uplink amplifier. Table 5-48 lists the characteristics of the uplink amplifier.

Figure 5-39 Uplink Amplifier

Table 5-48 Uplink Amplifier Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Speech delay	Voice path		0.5		ms
Gain range⁽¹⁾		0		61	dB
Absolute gain	0 dBFs at 1.02 kHz	–1		1	dB
Peak-to-peak differential input voltage (0 dBFs)	For differential input 0 dB gain setting			1.5	V_PP
Peak-to-peak single-ended input voltage (0 dBFs)	For single-ended input 0 dB gain setting			1.5	V_PP
Input impedance⁽²⁾		40k		70k	Ω
Total harmonic distortion (sine wave at 1.02 kHz)	At –1 dBFs		–80	–75	dB
	At –6 dBFs		–74	–69
	At –10 dBFs		–70	–65
	At –20 dBFs		–60	–55
	At –60 dBFs		–20	–15
Idle channel noise	20 Hz to 20 kHz, A-weighted, gain = 0 dB		–85	–78	dBFs
	16 kHz: < 20 Hz to 7 kHz, gain = 0 dB		–90
	8 kHz: P-weighted voice, gain = 18 dB		–87
	16 kHz: < 20 Hz to 7 kHz, gain = 18 dB		–82
Crosstalk A/D to D/A	Gain = 0 dB		–80		dB
Crosstalk path between two microphones		–70			dB
Intermodulation distortion	Two-tone method			–60	dB

(1) Gain range is defined by: Preamplifier = 0 to 30 dB; Filter = 0 to 31 dB (1-dB steps)

(2) Impedance varies in the specified range with gain selection.

5.3.2.7 Microphone Amplification Stage

Microphone amplification stages perform single-to-differential conversion for single-ended inputs. Two programmable gains from 0 to 30 dB can be set:

Automatic level control for main microphone or submicrophone input. The gain step is 1 dB.
Level control by register for line-in or carkit input, or headset microphone. The gain step is 6 dB.

The amplification stage outputs are connected to the ADC input (ADC left and right).

5.3.2.8 Carkit Input

The USB-CEA carkit uses the DP pad to input the audio signal.

The MCPC carkit uses the TXAF analog pad to input the audio signal.

Figure 5-40 shows the uplink carkit full path uplink characteristics for audio and USB.

Figure 5-40 Carkit Input Uplink Path Characteristics

Table 5-49 lists the electrical characteristics of the MCPC and USB-CEA carkit audio.

Table 5-49 MCPC and USB-CEA Carkit Audio Uplink Electrical Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Gain range ⁽¹⁾		–1		60	dB
Absolute gain, 0 dBFs at 1.02 kHz ⁽¹⁾⁽²⁾⁽³⁾	USB-CEA default gain setting	–1.5		1.5	dB
Absolute gain, 0 dBFs at 1.02 kHz ⁽¹⁾⁽²⁾⁽³⁾	MCPC default gain setting	–1.5		1.5	dB
Speech delay	Voice path		0.5		ms
Input common mode voltage ⁽⁴⁾	USB-CEA	1.3		1.9	V
Phone microphone amplifier input impedance at 1 kHz	USB-CEA	8	120		kΩ
Phone microphone amplifier input impedance at 1 kHz	MCPC	5	100		kΩ
Peak-to-peak single-ended input voltage (0 dBFs)	Default setting			1.414	V_PP
Total harmonic distortion (sine wave at 1 kHz), default gain setting	At –1 dBFs		–74	–60	dB
	At –6 dBFs
	At –10 dBFs
	At –20 dBFs
	At –60 dBFs
THD + N (20 Hz to 20 kHz, A-weighted)	At 0 dBFs		60		dB
Signal noise ratio (20 Hz to 20 kHz, A-weighted)	At 0 dBFs		60		dB
Idle channel noise (20 Hz to 20 kHz, A-weighted), default gain setting	USB-CEA		–77		dBFs
	MCPC		–80	–77	dBFs
Output PSRR (20 Hz to 20 kHz, A-weighted)	USB-CEA		50		dB
Output PSRR (20 Hz to 20 kHz, A-weighted)	MCPC		35		dB

(1) Gain range is defined by: MCPC/CEA amplifier = 0.56 dB/–1.02 dB; Preamplifier = 0 to 30 dB; Filter = 0 to 31 dB (1-dB steps).

(2) The CEA default gain setting assumes 0 dB on the preamplifier, 1 dB on the digital filter, and the MCPC/CEA amplifier at –1.02 dB.

(3) The MCPC default gain setting assumes 0 dB on the preamplifier, 0 dB on the digital filter, and the MCPC/CEA amplifier at 0.56 dB.

(4) Full-scale input voltage is 1 V minimum.

5.3.2.9 Digital Audio Filter Module

Figure 5-41 shows the digital audio filter uplink full path characteristics for the audio interface.

Figure 5-41 Digital Audio Filter Uplink Path Characteristics

The HPF can be bypassed. It is controlled by the MISC_SET_2 ATX_HPF_BYP bit, address 0x49.

Table 5-50 lists the audio filter frequency responses relative to reference gain at 1 kHz.

Table 5-50 Digital Audio Filter TX Electrical Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
Passband		0.0005		0.42	F_S
Passband gain	In region 0.0005F_S to 0.42F_S⁽¹⁾	–0.25		0.25	dB
Stopband			0.6		F_S
Stopband attenuation	In region 0.6F_S to 1F_S⁽¹⁾		60		dB
Group delay			15.8/F_S		μs

(1) F_S is the sampling frequency (8, 11.025, 12, 16, 22.05, 24, 32, 44.1, or 48 kHz).

5.3.2.10 Digital Voice Filter Module

Figure 5-42 shows the digital voice filter uplink full path characteristics of the voice interface.

Figure 5-42 Digital Audio Filter Uplink Path Characteristics

The global HPF or only the third-order HPF can be bypassed (when the third-order HPF is skipped, the first-order HPF remains active). It is controlled by the MISC_SET_2 VTX_3RD_HPF_BYP bit, address 0x49, the for the third-order HPF, and by the VTX_HPF_BYP bit for the global HPF.

5.3.2.10.1 Voice Uplink Filter (Sampling Frequency at 8 kHz)

Figure 5-43 and Figure 5-44 show the voice uplink frequency response with a sampling frequency of 8 kHz.

Figure 5-43 Voice Uplink Frequency Response With F_S = 8 kHz (Frequency Range 0 to 600 Hz)

Figure 5-44 Voice Uplink Frequency Response With F_S = 8 kHz (Frequency Range 3000 to 3600 Hz)

Table 5-51 lists the voice filter frequency responses relative to reference gain at 1 kHz with F_S = 8 kHz.

Table 5-51 Digital Voice Filter TX Electrical Characteristics With F_S = 8 kHz

Parameter	Test Conditions	Min	Typ	Max	Unit
Frequency response relative to reference gain at 1 kHz	100 Hz			–20	dB
	200 Hz	–8		–0.5
	300 to 3300 Hz	–0.5	0	0.5
	3400 Hz	–1.5	0	0.1
	4000 Hz			–17
	4600 Hz			–40
	>6000 Hz			–45
Pole when HPF is disabled (first-order HPF)			24		Hz
Group delay			0.5		ms

5.3.2.10.2 Voice Uplink Filter (Sampling Frequency at 16 kHz)

Figure 5-45 and Figure 5-46 show the voice uplink frequency response with a sampling frequency of 16 kHz.

Figure 5-45 Voice Uplink Frequency Response With F_S = 16 kHz (Frequency Range 0 to 600 Hz)

Figure 5-46 Voice Uplink Frequency Response With F_S = 16 kHz (Frequency Range 6200 to 7000 Hz)

Table 5-52 lists the voice filter frequency responses relative to reference gain at 1 kHz with F_S = 16 kHz.

Table 5-52 Digital Voice Filter TX Electrical Characteristics With F_S = 16 kHz

Parameter	Test Conditions	Min	Typ	Max	Unit
Frequency response relative to reference gain at 1 kHz (first-order HPF)	300 to 6600 Hz	–0.5		0.5	dB
	6800 Hz	–1.5		0.1
	8000 Hz	–0.5	0	–17
	9200 Hz	–1.5	0	–40
	12000 Hz			–45
Pole when third-order HPF is disabled (first-order HPF)			47		Hz

5.4 USB HS 2.0 OTG Transceiver

The TPS65950 includes a USB OTG transceiver with CEA and MCPC carkit interfaces that support USB 480 Mbps HS, 12 Mbps full-speed (FS), and USB 1.5 Mbps low-speed (LS) through a 4-pin ULPI.

The carkit block ensures the interface between the phone and a carkit device. The TPS65950 USB supports CEA and MCPC carkit standards.

Figure 5-47 is a block diagram of the USB 2.0 physical layer (PHY).

Figure 5-47 USB 2.0 PHY Overview

5.4.1 USB Features

The device has a USB OTG carkit transceiver that allows system implementation that complies with the following specifications:

Universal Serial Bus 2.0 Specification
On-The-Go Supplement to the USB 2.0 Specification
CEA-2011: OTG Transceiver Interface Specification
CEA-936A: Mini-USB Analog Carkit Interface Specification
MCPC ME-UART GL-006 Specification
UTMI+ Low Pin Interface Specification

The features of the individual specifications are:

Universal Serial Bus 2.0 Specification (hereafter referred to as the USB 2.0 specification):
- 5-V-tolerant data line at HS/FS, FS-only, and LS-only transmission rates
- 7-V-tolerant video bus (VBUS) line
- Integrated data line serial termination resistors (factory-trimmed)
- Integrated data line pullup and pulldown resistors
- On-chip 480-MHz PLL from the internal system clock (19.2, 26, and 38.4 MHz)
- Synchronization (SYNC)/end-of-period (EOP) generation and checking
- Data and clock recovery from the USB stream
- Bit-stuffing/unstuffing and error detection
- Resume signaling, wakeup, and suspend detection
- USB 2.0 test modes
On-The-Go Supplement to the USB 2.0 Specification (hereafter referred to as the OTG supplement to the USB 2.0 specification):
- 3-pin LS/FS serial mode (DAT_SE0)
- 4-pin LS/FS serial mode (VP_VM)
CEA-2011: OTG Transceiver Interface Specification:
- 3-pin LS/FS serial mode (DAT_SE0)
- 4-pin LS/FS serial mode (VP_VM)
CEA-936A: Mini-USB Analog Carkit Interface Specification (hereafter referred to as the CEA-936A specification):
- 5-pin CEA mini-USB analog carkit interface
- UART signaling
- Audio (mono/stereo) signaling
- UART transactions during audio signaling
- Basic and smart 4-wire/5-wire carkit, chargers, and accessories
- ID CEA resistor comparators
MCPC ME-UART GL-006 Specification (hereafter referred to as the MCPC ME-UART specification):
- 11-pin MCPC Association of Radio Industries and Businesses (ARIB)-USBi (USB interface standard) analog carkit interface
- UART signaling
UTMI+ Low Pin Interface Specification (hereafter referred to as the ULPI specification):
- 12-pin ULPI with 8-pin parallel data for USB signaling and register access
- 60-MHz clock generation
- Register mapping

5.4.2 USB Transceiver

Figure 5-48 is an application schematic of the USB system.

Figure 5-48 USB System Application Schematic

NOTE

For the component values, see Table 5-92.

5.4.2.1 MCPC Carkit Port Timing

MCPC UART specification:

11-pin MCPC ARIB-USBI analog carkit interface
Integrated 50 RRTSO resistor
UART signaling (from 600 bps to 460.8 kbps)
Audio (mono/stereo) signaling: In this mode, the ULPI data bus is redefined as a 4-pin UART interface, which exchanges data through a direct access to the FS/LS analog transmitter and receiver.

The UART data are sent and received on the USB D+/D– pads, and the handshake signals are sent and received on the RTSO/CTSI pads.

Figure 5-49 shows the MCPC UART and handshake mode data flow.

Figure 5-49 MCPC UART and Handshake Mode Data Flow

Table 5-53 lists the McPC UART and handshake mode timings.

Table 5-53 MCPC UART and Handshake Mode Timings

Notation	Parameter		Min	Max	Unit
CK5	t_{d(UART_TXH-DM)}	Delay time, UART_TX rising edge to DM transition	10	37	ns
CK6	t_{d(UART_TXL-DM)}	Delay time, UART_TX falling edge to DM transition	2.5	13	ns
CK7	t_{d(DPH-UART_RX)}	Delay time, DP rising edge to UART_RX transition	17	40	ns
CK8	t_{d(DPL-UART_RX)}	Delay time, DP falling edge to UART_RX transition	26	50	ns
CK9	t_{d(UART_CTSH-RTSO)}	Delay time, UART_CTS rising edge to RTSO transition	1	18	ns
CK10	t_{d(UART_CTSL-RTSO)}	Delay time, UART_CTS falling edge to RTSO transition	1	18	ns
CK11	t_{d(CTSIH-UART_RTS)}	Delay time, CTSI rising edge to UART_RTS transition	3	16	ns
CK12	t_{d(CTSIL-UART_RTS)}	Delay time, CTSI falling edge to UART_RTS transition	3	16	ns

Figure 5-50 shows the MCPC UART and handshake mode timings.

Figure 5-50 MCPC UART and Handshake Mode Timings

5.4.2.2 USB-CEA Carkit Port Timing

CEA carkit mode lets the link communicate through the USB PHY to a remote carkit in CEA audio + data during audio (DDA) mode as defined in the CEA-936A specification. In this mode, the ULPI data bus is redefined as a 2-pin UART interface, which exchanges data through a direct access to the FS/LS analog transmitter and receiver.

UART data are sent and received on the USB D+/D– pads. D+/D– are also used in this mode to carry audio I/O signals.

Table 5-54 assumes testing over the recommended operating conditions (see the CEA-936A specification).

Table 5-54 USB-CEA Carkit Interface Timing Parameters

Parameter		Min	Max	Unit
t_{PH_DP_CON}	Phone D+ connect time	100		ms
t_{CR_DP_CON}	Carkit D+ connect time	150	300	ms
t_{PH_DM_CON}	Phone D– connect time		10	ms
t_{PH_CMD_DLY}	Phone command delay	2		ms
t_{PH_MONO_ACK}	Phone mono acknowledge		10	ms
t_{PH_DISC_DET}	Phone D+ disconnect time	150		ms
t_{CR_DISC_DET}	Carkit D– disconnect detect	50	150	ms
t_{PH_AUD_BIAS}	Phone audio bias	1		ms
t_{CR_AUD_DET}	Carkit audio detect	400	800	μs
t_{CR_UART_DET}	Carkit UART detect (DDA enabled)	700	1200	ns
t_{PH_STLO_DET}	Phone stereo D+ low detect	30	100	ms
t_{PH_PLS_POS}	Phone D– interrupt pulse width	200	600	ns
t_{CR_PLS_NEG}	Carkit D+ interrupt pulse width	200	600	ns
t_{DAT_AUD_POL}	DDA polarity	20	60	ms
t_{ACC_COL_DET}	Accessory identification (ID) collision detect	2	3	ms
t_{ACC_INT_PW}	Accessory ID interrupt pulse width	200	400	μs
t_{ACC_INT_WAIT}	Accessory ID interrupt wait time	10	15	ms
t_{ACC_CMD_WAIT}	Accessory ID command wait time	0		ms
t_{PH_INT_PW}	Phone ID interrupt pulse width	4	8	ms
t_{PH_INT_WAIT}	Phone ID interrupt wait time	4	8	ms
t_{PH_CMD_WAIT}	Phone ID command wait time	0		ms
t_{PH_UART_RPT}	Phone command repeat time	50		ms
t_{CR_UART_RSP}	Carkit UART response		30	ms
t_{CR_INT_RPT}	Carkit interrupt repeat time	50		ms
f_{UART_DFLT}	Default UART signaling rate (typical rate)		9600	bps

Figure 5-51 shows the USB-CEA carkit UART data flow.

Figure 5-51 USB-CEA Carkit UART Data Flow

Table 5-55 lists the USB-CEA carkit UART timing parameters.

Table 5-55 USB-CEA Carkit UART Timing Parameters

Notation	Parameter			Min	Max	Unit
CK1	t_{d(UART_TXH-DM)}	Delay time, UART_TX rising edge to DM transition		4.0	11	ns
CK2	t_{d(UART_TXL-DM)}	Delay time, UART_TX falling edge to DM transition		4.0	11	ns
CK3	t_{d(DPH-UART_RX)}	Delay time, DP rising edge to UART_RX transition	At 38.4 MHz	205	234	ns
CK3	t_{d(DPH-UART_RX)}	Delay time, DP rising edge to UART_RX transition	At 19.2 MHz	310	364	ns
CK4	t_{d(DPL-UART_RX)}	Delay time, DP falling edge to UART_RX transition	At 38.4 MHz	205	234	ns
CK4	t_{d(DPL-UART_RX)}	Delay time, DP falling edge to UART_RX transition	At 19.2 MHz	310	364	ns

Figure 5-52 shows the USB-CEA carkit UART timings.

Figure 5-52 USB-CEA Carkit UART Timing Parameters

5.4.2.3 HS USB Port Timing

The ULPI interface supports an 8-bit data bus and the internal clock mode. The 4-bit data bus and the external clock mode are not supported.

The HS functional mode supports an operating rate of 480 Mbps.

Table 5-56 and Table 5-57 assume testing over the recommended operating conditions (see Figure 5-53).

Figure 5-53 HS USB Interface—Transmit and Receive Modes (ULPI 8-Bit)

NOTE

ULPI data [7:0] lines are set to 1 after USB PHY power up, and before the clock signal is stable.

The input timing requirements are given by considering a rising or falling time of 1 ns.

Table 5-56 HS USB Interface Timing Requirement Parameters

Notation	Parameter		Min	Unit
HSU4	t_s(STPV-CLKH)	Setup time, STP valid before UCLK rising edge	6	ns
HSU5	t_{h(CLKH-STPIV)}	Hold time, STP valid after UCLK rising edge	0	ns
HSU6	t_{s(DATAV-CLKH)}	Setup time, DATA[0:7] valid before UCLK rising edge	6	ns
HSU7	t_{h(CLKH-DATIV)}	Hold time, DATA[0:7] valid after UCLK rising edge	0	ns

Table 5-57 HS USB Interface Switching Requirement Parameters⁽¹⁾

Notation	Parameter			Min	Typ	Max	Unit
HSU0	f_p(CLK)	UCLK clock frequency	Steady state	58.42	60	61.67	MHz
HSU1	t_W(CLK)	UCLK duty cycle	Steady state	48.3%	50%	51.7%
HSU2	t_d(CLKH-DIR)	Delay time, UCLK rising edge to DIR transition	Steady state	0		9	ns
HSU2	t_d(CLKH-NXTV)	Delay time, UCLK rising edge to NXT transition	Steady state	0		9	ns
HSU3	t_d(CLKH-DATV)	Delay time, UCLK rising edge to DATA[0:7] transition	Steady state	0		9	ns

(1) The capacitive load for output data and control load is 10 pF (rising and falling time is 2 ns).
The capacitive load for the CLK port is 6 pF (rising and falling time is 1 ns).
The HS USB interface has only one state: steady state.

5.4.2.4 PHY Electrical Characteristics

The PHY is the physical signaling layer of the USB 2.0. It contains the drivers and receivers required for physical data and protocol signaling on the DP and DM lines.

The PHY interfaces to the USB controller through UTMI.

There are two main classes of transmitters and receivers in the PHY:

FS and LS transceivers. These are the legacy USB1.x transceivers.
HS transceivers

To bias the transistors and run the logic, the PHY also contains reference generation circuitry which consists of:

A digital phase-locked loop (DPLL) that does a frequency multiplication to achieve the 480-MHz low-jitter lock necessary for USB, and the clock required for the switched capacitor resistance block
A switched capacitor resistance block that replicates an external resistor on chip

Built-in pullup and pulldown resistors are used as part of the protocol signaling.

The PHY also contains circuitry that protects it from an accidental 5-V short on the DP and DM lines and from 8-kV IEC ESD strikes.

5.4.2.4.1 5-V Tolerance

When the voltage on DP or DM exceeds 3.6 V, a stress condition is detected. In this case, the current is drawn from the DP/DM line, to prevent damage caused by the stress voltage. In this condition, the VRUSB_3V supply can be charged as high as 3.6 V. Table 5-58 lists the tolerances.

Table 5-58 5V-Tolerant Electrical Summary

Parameter		Comments	Min	Max	Unit
Continuous short-circuit stress	DCSTRESS	50% TX/50% RX/50% LS/50% FS/VBUS = 5.25 V	24		h
Worst case overshoot and undershoot stress	ACSTRESS	t_HI = 60 ns/t_LO = 100 ns/t_R = t_F = 4 ns/ V_HI = 4.6 V/VLO = –1.0 V/R_SRC = 39Ω/ 50% TX/50% RX/VBUS = 5.25 V	24		h
Internal DP/DM stress voltage	VDX_STRESS	Force 5.25 V VBUS/DP/DM		4.3	V
V3P1 stress voltage	V3P1_STRESS	Force 5.25 V VBUS/DP/DM/ID		3.6	V
DP/DM input stress current	IDX_STRESS	Force 5.25 V VBUS/DP/DM	30		mA
ID input stress current	IID_STRESS	Force 5.25 V VBUS/DP/DM/ID		25	μA

5.4.2.4.2 LS/FS Single-Ended Receivers

In addition to the differential receiver, there is a single-ended receiver (SE–, SE+) for each of the two data lines D+/–. The main purpose of the single-ended receivers is to qualify the D+ and D– signals in the FS/LS modes of operation. Table 5-59 lists the parameters of the LS/FS single-ended receivers.

Table 5-59 LS/FS Single-Ended Receivers

Parameter		Comments	Min	Typ	Max	Unit
USB Single-Ended Receivers
Skew between VP and VM	SKWVP_VM	Driver outputs unloaded	–2	0	2	ns
Single-ended hysteresis	V_{SE_HYS}			0		mV
High (driven)	V_IH		2			V
Low	V_IL				0.8	V
Switching threshold	V_TH		0.8		2	V
UART Receiver CEA
	VIH_SER	DP_PULLDOWN asserted	2			V
Serial interface input low	VIL_SER	DP_PULLDOWN asserted			0.8	V
Switching threshold	V_TH		0.8		2	V
UART Receiver MCPC From DP.RXD
MCPC DP pullup	RMCPCDP	Internal pullup	4.7k		10k	Ω
Open-drain input high level	Z_IH	Internal MCPC DP pullup asserted		Open		Ω
Open-drain input low level	Z_IL	External open-drain NMOS impedance to ground. With internal MCPC DP pullup asserted.			100	Ω
Output high level	V_OH (*)	At DATA1 pin	VIO – 0.45			V
Output low level	V_OL	At DATA1 pin			0.45	V

5.4.2.4.3 LS/FS Differential Receiver

A differential input receiver (RX) retrieves the LS/FS differential data signaling. The differential voltage on the line is converted to digital data by a differential comparator on DP/DM. This data is then sent to a clock and data recovery circuit that recovers the clock from the data. In an additional serial mode, the differential data is directly output on the RXRCV pin. Table 5-60 lists the parameters of the LS/FS differential receiver.

Table 5-60 LS/FS Differential Receiver

Parameter		Comments	Min	Typ	Max	Unit
Skew between VP/VM	SKWVP_VM	Driver outputs unloaded	–16	0	16	ns
Receiver power-up time	TPWR_UP_RCV		0	100	200	μs
Differential common mode range	V_CM		0.8		2.5	V
Differential input sensitivity	V_DI		0.2			V

5.4.2.4.4 LS/FS Differential Transmitter

The USB transceiver (TX) uses a differential output driver to drive the USB data signal D+/– onto the USB cable. The driver outputs support 3-state operation to achieve bidirectional half-duplex transactions. Table 5-61 lists the parameters of the LS/FS differential transmitter.

Table 5-61 LS/FS Differential Transmitter

Parameter		Comments	Min	Typ	Max	Unit
B-device (dual-role) unconfigured average current	IB_OTG_UNCFG	0 V = VBUS = 5.25 V, t_AVG = 1 ms			150	μA
B-device (secure remote password [SRP] capable, peripheral only) unconfigured average current	IB_PO_UNCFG	0 V = VBUS = 5.25 V, t_AVG = 1 ms			8	mA
FS fall time/rise time	t_Ff, t_Fr	10%–90% C_L = 50 pF on DP and DM	4		20	ns
FS rise and fall time matching	TFRFM	10%–90% C_L = 50 pF on DP and DM	90%		110%
FS width of SE0 interval during differential transition	t_Fst	Pulldowns R = 15 kΩ on DP and DM Pullup R = 1.5 kΩ at 3.6 V on DP only			14	ns
LS fall time/rise time	t_LF, t_LR	10%–90% C_L = [200–600] pF on DP and DM Pullup R = 1.5 kΩ at 3.6 V for DM only	75		300	ns
LS rise and fall time matching	TLRFM	10%–90% C_L = [200–600] pF on DP and DM Pullup R = 1.5 kΩ at 3.6 V for DM only	80%		120%
LS width of SE0 interval during differential transition	t_LST	Pulldowns R = 15 kΩ on DP and DM Pullup R = 1.5 kΩ at 3.6 V on DM only			210	ns
Driver power-up time	TPWR_UP_TXD	Pulldowns R = 15 kΩ on DP and DM Pullup R = 1.5 kΩ at 3.6 V on DM only	0	100	200	μs
FS source driver jitter to next transition	t_SDJ1	C_L = 50 pF on DP and DM	–2		2	ns
FS source driver jitter for paired transitions	t_SDJ2	C_L = 50 pF on DP and DM	–1		1	ns
LS upstream facing port source driver jitter (next transition)	t_USDJ1	C_L = [200–600] pF on DP and DM Pullup R = 1.5 kΩ at 3.6 V for DM only	–25		25	ns
LS upstream facing port source driver jitter (next transition)	t_USDJ2	C_L = [200–600] pF on DP and DM Pullup R = 1.5 kΩ at 3.6 V for DM only	–10		10	ns
Output signal cross-over voltage	Vcrs	Pulldowns R = 15 kΩ on DP and DM Pullup R = 1.5 kΩ at 3.6 V on DM only	1.3		2	V
High (driven)	V_OH	Pulldowns R = 15 kΩ on DP and DM	2.8	3.3	3.6	V
Low	V_OL	Pullups R = 1.5 kΩ at 3.6 V on DP and DM	0	0.1	0.3	V
Driver output resistance	Z_DRV/R_S		28	36	44	Ω

5.4.2.4.5 HS Differential Receiver

The HS receiver consists of the following blocks:

A differential input comparator to receive the serial data
A squelch detector to qualify the received data
An oversampler-based clock data recovery scheme followed by a nonreturn to zero inverted (NRZI) decoder, bit unstuffing, and a serial-to-parallel converter to generate the UTMI DATAOUT

Table 5-62 lists the parameters of the HS differential receiver.

Table 5-62 HS Differential Receiver

Parameter		Comments	Min	Typ	Max	Unit
Input Levels for HS
HS squelch detection threshold	V_HSSQ	(Differential signal amplitude)	100	125	150	mV
HS disconnect detection threshold	V_HSDSC	(Differential signal amplitude)	525	600	625	mV
HS data signaling common mode voltage range	V_HSCM		–50	200	500	mV
HS differential input sensitivity	V_DIHS	(Differential signal amplitude)	–100		100	mV
Input Impedance for HS
Internal specification for input capacitance	C_HSLOAD			11		pF
Internal C_HSLOAD DP/DM matching	C_HSLOADM			0.2		pF
External Components With the Total Budget Combined (Without USB Cable Load)
External capacitance on DP or DM					2	pF
External series resistance on DP or DM					1	Ω

5.4.2.4.6 HS Differential Transmitter

The HS transmitter is always operated on the UTMI parallel interface. The parallel data on the interface is serialized, bit-stuffed, NRZI-encoded, and transmitted as a dc output current on DP or DM, depending on the data. Each line has an effective 22.5-Ω load to ground, which generates the voltage levels for signaling.

A disconnect detector is also part of the HS transmitter. A disconnect on the far end of the cable causes the impedance seen by the transmitter to double, thereby doubling the differential amplitude seen on the DP/DM lines.

Table 5-63 lists the parameters of the HS differential transmitter.

Table 5-63 HS Differential Transmitter

Parameter		Comments	Min	Typ	Max	Unit
Output Levels for HS
HS TX idle level	V_HSOI	Absolute voltage DP/DM – Both internal/external 45 Ω	–10	0	10	mV
HS TX data signaling high	V_HSOH	Absolute voltage DP/DM – Both internal/external 45 Ω	360	400	440	mV
HS data signaling low	V_HSOL		–10	0	10	mV
Chirp J level	V_CHIRPJ	Differential voltage	700	800	1100	mV
Chirp K level	V_CHIRPK	Differential voltage	–900	–800	–500	mV
HS TX disconnect threshold	V_DISCOUT	Absolute voltage DP/DM—No external 45 Ω	700			mV
Driver Characteristics
Rise time	t_HSR	(10%–90%)	500			ps
Fall time	t_HSF	(10%–90%)	500			ps
Driver output resistance	Z_HSDRV	Also serves as HS termination	40.5	45	49.5	Ω

5.4.2.4.7 CEA/MCPC/UART Driver

Table 5-64 lists the parameters of the CEA/MCPC/UART driver.

Table 5-64 CEA/MCPC/UART Driver

Parameter		Comments	Min	Typ	Max	Unit
UART Driver CEA
Phone UART edge rates	t_{PH_UART_EDGE}	DP_PULLDOWN asserted			1	μs
Serial interface output high	V_{OH_SER}	ISOURCE = 4 mA	2.4	3.3	3.6	V
Serial interface output low	V_{OL_SER}	ISINK = –4 mA	0	0.1	0.4	V
UART Driver MCPC to DM.TX.
Input high level	V_IH (*)	At DATA0 pin	VIO – 0.45			V
Input low level	V_IL	At DATA0 pin			0.45	V
MCPC DM external pullup	R_MCPCDM	External pullup	4.7k		10k	Ω
MCPC DM pullup supply	MCPCVDDEXT	External pullup supply	1.8		3.3	V
Open-drain output high level	Z_OH	External pullup asserted		HiZ		Ω
Open-drain output high level	Z_OH	HiZ means high impedance equivalent to open		HiZ		Ω
Open-drain output low level	V_OL	With open-drain NMOS to ground is ON and external pullup is asserted.	0		0.6	V
Carkit Pulse Driver
Pulse match tolerance	QPLS_MTCH	ZCR_SPKR_IN = 60 kΩ at f = 1 kHz			5%
Phone D– interrupt pulse width	t_{PH_PLS_POS}	ZCR_SPKR_IN = 60 kΩ at f = 1 kHz	200		600	ns
Phone positive pulse voltage	V_{PH_PLS_POS}	ZCR_SPKR_IN = 60 kΩ at f = 1 kHz	2.8		3.6	V

5.4.2.4.8 Pullup/Pulldown Resistors

Table 5-65 lists the parameters of the pullup/pulldown resistors.

Table 5-65 Pullup/Pulldown Resistors

Parameter		Comments	Min	Typ	Max	Unit
Pullup Resistors
Bus pullup resistor on upstream port (idle bus)	R_PUI	Bus idle	0.9	1.1	1.575	kΩ
Bus pullup resistor on upstream port (receiving)	R_PUA	Bus driven/driver outputs unloaded	1.425	2.2	3.09	kΩ
High (floating)	V_IHZ	Pullups/pulldowns on DP and DM lines	2.7		3.6	V
Phone D+ pullup voltage	V_{PH_DP_UP}	Driver outputs unloaded	3	3.3	3.6	V
Pulldown Resistors
Phone D+/– pulldown	R_{PH_DP_DWN}	Driver outputs unloaded	14.25	18	24.8	kΩ
Phone D+/– pulldown	R_{PH_DM_DWN}	Driver outputs unloaded	14.25	18	24.8	kΩ
High (floating)	V_IHZ	Pullups/pulldowns on DP and DM lines	2.7		3.6	V
D+/– Data Line
Upstream facing port	C_INUB			22	75	pF
OTG device leakage	V_{OTG_DATA_LKG}				0.342	V
Input impedance exclusive of pullup/pulldown⁽¹⁾	Z_INP	Driver outputs unloaded (waiver from usb.org standards committee)	80	120		kΩ

(1) Waiver received from usb.org standards committee on ZINP 300kmin specification

5.4.2.4.9 PHY DPLL Electrical Characteristics

USB DPLL supports input frequencies of 12, 13, 19.2, 24, and 26 MHz. The input frequency must be programmed through frequency select bits. USB DPLL provides a low jitter and gives eight equidistant phases of the 480-MHz clock for the USB receiver.

Table 5-66 lists the electrical characteristics of the PHY DPLL.

Table 5-66 PHY DPLL Electrical Characteristics

Parameter		Comments	Min	Typ	Max	Unit
Input clock				12		MHz
				13
				19.2
				24
				26
Digital supply	VINTDIG		1.35	1.5	1.65	V
Analog 1.5-V supply	VRUSB_1V5		1.35	1.5	1.65	V
Analog 1.8-V supply	VRUSB_1V8		1.62	1.8	1.98	V
Output frequency (eight phases)				480		MHz
RMS period jitter (output)					10	ps
Deterministic period jitter (output)					50	ps
RMS jitter per phase noise frequency band (input)		Frequency band: 1 to 10 Hz			310	ps
		Frequency band: 10 to 100 Hz			90
		Frequency band: 100 to 1000 Hz			30
		Frequency band: 1 to 10 kHz			10
		Frequency band: 10 to 100 kHz			10
		Frequency band: 0.1 to 0.5 MHz			290
		Frequency band: 0.5 to 1 MHz			650
Deterministic period jitter (input)					100	ps
Frequency error (input)					±150	ppm
Frequency error (output)					±500	ppm
Phase-to-phase variation					35	ps
Noise on digital 1.5-V supply					100	mV
Noise on analog 1.5-V supply					50	mV
Noise on analog 1.8-V supply					36	mV

5.4.2.4.10 PHY Power Consumption

Table 5-67 lists, by mode, the power consumption values of the modules.

Table 5-67 PHY Power Consumption

Supply	Typ	Unit
HS Mode
VUSB.3P1	8.5	mA
VINTUSB1P8.OUT	25	mA
VINTUSB1P5.OUT	24	mA
VINTDIG.OUT	0.3	mA
FS Mode
VUSB.3P1	13	mA
VINTUSB1P8.OUT	5.4	mA
VINTUSB1P5.OUT	17.5	mA
VINTDIG.OUT	0.3	mA
LS Mode
VUSB.3P1	12.5	mA
VINTUSB1P8.OUT	5.4	mA
VINTUSB1P5.OUT	17.5	mA
VINTDIG.OUT	0.3	mA
Low-Power/Suspend Mode
VUSB.3P1	0	mA
VINTUSB1P8.OUT	0	mA
VINTUSB1P5.OUT	2	μA
VINTDIG.OUT	0	mA
Power-Down Mode
VUSB.3P1	0	mA
VINTUSB1P8.OUT	0	mA
VINTUSB1P5.OUT	2	μA
VINTDIG.OUT	0	mA

5.4.2.5 OTG Electrical Characteristics

The OTG block integrates three main functions:

USB plug detection function on VBUS and ID
ID resistor detection
VBUS level detection

5.4.2.5.1 OTG VBUS Electrical

Table 5-68 lists the OTG VBUS electrical parameters.

Table 5-68 OTG VBUS Electrical

Parameter		Comments	Min	Typ	Max	Unit
VBUS Wake-Up Comparator
VBUS wake-up delay	DEL_{VBUS_WK_UP}				15	μs
VBUS wake-up threshold	V_{VBUS_WK_UP}		0.5	0.6	0.7	V
VBUS Comparators
A-device session valid	V_{A_SESS_VLD}		0.8	1.1	1.4	V
A-device V_BUS valid	V_{A_VBUS_VLD}		4.4	4.5	4.6	V
B-device session end	V_{B_SESS_END}		0.2	0.5	0.8	V
B-device session valid	V_{B_SESS_VLD}		2.1	2.4	2.7	V
VBUS Line
A-device V_BUS input impedance to ground	R_{A_BUS_IN}	SRP (V_BUS pulsing) capable A-device not driving V_BUS			100	kΩ
B-device V_BUS SRP pulldown	R_{B_SRP_DWN}	5.25 V/8 mA, pullup voltage = 3 V	0.656	10		kΩ
B-device V_BUS SRP pullup	R_{B_SRP_UP}	(5.25 V – 3 V)/8 mA, pullup voltage = 3 V	0.281	1	2	kΩ
B-device V_BUS SRP rise time maximum for OTG-A communication	t_{Rise_SRP_UP_Max}	0 to 2.1 V with < 13 μF load			36	ms
B-device V_BUS SRP rise time minimum for standard host connection	t_{Rise_SRP_UP_Min}	0.8 to 2.0 V with > 97 μF load	60			ms
VBUS line maximum voltage		If VBUS_CHRG bit is low*			7	V

5.4.2.5.2 OTG ID Electrical

Table 5-69 lists the OTG ID electrical parameters.

Table 5-69 OTG ID Electrical

Parameter		Comments	Min	Typ	Max	Unit
ID Wake-Up Comparator
ID wake-up comparator	R_{ID_WK_UP}	Wake up when ID shorted to ground through a resistor lower than 445 kΩ (±1%)	445			kΩ
ID Comparators—ID External Resistor Specifications
ID ground comparator	R_{ID_GND}	ID_GND interrupt when ID shorted to ground through a resistor lower than 10 Ω	0	5	10	Ω
ID 100k comparators	R_{ID_100K}	ID_100K interrupt when 102 kΩ (1%) resistor plugged in	101	102	103	kΩ
ID 200k comparators	R_{ID_200K}	ID_200K interrupt when 200 kΩ (1%) resistor plugged in	198	200	202	kΩ
ID 440k comparators	R_{ID_440K}	ID_440K interrupt when 440 kΩ (1%) resistor plugged in	435	440	445	kΩ
ID float comparator	R_{ID_FLOAT}	ID_FLOAT interrupt when ID shorted to ground through a resistor higher than 560 kΩ	1400			kΩ
ID Line
Phone I_D pullup to V_{PH_ID_UP}	R_{PH_ID_UP}	ID unloaded (VRUSB)	70	200	286	kΩ
Phone I_D pullup voltage	VPH_ID_UP	Connected to VRUSB	2.5		3.2	V
ID line maximum voltage					5.25	V

5.5 Battery Interface

5.5.1 General Description

5.5.1.1 Battery Charger Interface Overview

The TPS65950 has a BCI for complete battery management. The main function of the BCI is to control the charging of either 1-cell Li-ion or Li-ion polymer batteries, or 1-cell Li-ion batteries with cobalt-nickel-manganese anodes. It supports regulated ac chargers of 7-V absolute maximum and can charge with USB host devices, MCPC devices, USB chargers, or carkits of 7-V absolute maximum. The BCI can perform software-controlled linear charging with the sources mentioned, software-controlled pulsed charging with current-limited ac chargers, and automatic linear charging with ac chargers, USB chargers, and carkits.

The battery is monitored using the 10-bit ADC from the MADC to measure battery voltage, battery temperature, battery type, battery charge current, USB device input voltage, and ac charger input voltage. The magnitude of the charging current and the charging voltage is set by 10 bits of a programming register converted by a 10-bit DAC, whose output sets the reference input of the charging current and charging voltage control loop.

The BCI also performs monitoring functions:

ac charger detection
VBUS detection
Battery detection
ac charger overvoltage detection
VBUS overvoltage detection
Battery overvoltage detection
Battery voltage level detection
Battery charge current level detection
Battery temperature out-of-range detection
Battery end-of-charge detection
Battery overcurrent detection
Watchdog

5.5.1.2 Battery Backup Overview

The TPS65950 implements a backup mode, in which the backup battery keeps the RTC running. A rechargeable backup battery can be recharged from the main battery.

When the main battery is below 2.7 V or is removed, the backup battery powers the backup if the backup battery voltage is greater than 1.8 V. The backup domain powers up the following:

Internal 32.768-kHz oscillator
RTC
Hash table (20 registers of 8 bits each)
Eight GP storage registers

5.5.2 Typical Application Schematics

5.5.2.1 Functional Configurations

The BCI can be used in different configurations (see Figure 5-54). Each configuration requires a dedicated typical application schematic:

ac charge supported (see Figure 5-54A, Figure 5-54B, and Figure 5-54D)
USB charge supported (see Figure 5-54A and Figure 5-54C)
ac constant voltage mode supported (see Figure 5-54A and Figure 5-54B)
ac charger with current nonlimited (see Figure 5-54D)

A. Schematic that supports ac charge, ac constant voltage mode, and USB charge. With this ac compensation schematic, constant voltage mode is possible, but only current limited chargers are supported.

B. Schematic that supports only ac charge and ac constant voltage mode. With this ac compensation schematic, constant voltage mode is possible, but only current limited chargers are supported.

C. Schematic that supports only USB charge.

D. Schematic that supports only ac charge. With this ac compensation schematic, constant voltage mode is not possible, but current nonlimited chargers are supported.

Figure 5-54 Typical Application Schematics

NOTE

For the component values, see Table 5-92.

5.5.2.2 In-Rush Current Limitation Schematic

With the typical application schematic supporting constant voltage mode (Figure 5-54 A and B), battery in-rush current is limited by the charging device. The application schematic can be enhanced to support in-rush current at the charging device plug to maximum 850 mA as detailed by Figure 5-55. T3, R3, and C3 are connected between VAC and ICTLAC1 and intentionally bring in-rush cucation. The described enhancement is not required for Figure 5-54 D, where constant voltage mode is not supported.

Figure 5-55 shows a typical application schematic with in-rush current limitation.

Figure 5-55 Typical Application Schematic (In-Rush Current Limitation)

5.5.2.3 Configuration With BCI Not Used

Figure 5-56 shows how to connect the BCI when it is not in use. The SUSPENDM bit must be set to disable the BCI internally.

Figure 5-56 Typical Application Schematic (BCI Not Used)

5.5.3 Electrical Characteristics

This section describes the electrical characteristics of the BCI in the TPS65950.

5.5.3.1 Main Charge

Table 5-70 lists the electrical characteristics of the main charge.

Table 5-70 Main Charge Electrical Characteristics
VBAT = 3.6 V, R_S = 0.22 Ω, unless otherwise specified

Parameter	Test Conditions	Min	Typ	Max	Unit
VAC input voltage range⁽¹⁾	dc voltage	4.8	5.4	7	V
VBUS input voltage range (external)	dc voltage	4.4	5	7	V
Charge current range				1.7	A
VAC accessory supply mode consumption	VBAT = 3.6 V, consumption on VBAT when ACCSUPEN = 1 and ACPATHEN = 1 connected to VBAT, current limitation enabled		0.75	1	mA
VAC accessory supply mode consumption	VBAT = 3.6 V, consumption on VBAT when ACCSUPEN = 1 and ACPATHEN = 1 connected to VBAT, current limitation disabled		0.525	0.7	mA
VBUS accessory supply mode consumption	VBAT = 3.6 V, consumption on VBAT when ACCSUPEN = 1 and USBPATHEN = 1 connected to VBAT, current limitation enabled		0.64	0.85	mA
VBUS accessory supply mode consumption	VBAT = 3.6 V, consumption on VBAT when ACCSUPEN = 1 and USBPATHEN = 1 connected to VBAT, current limitation disabled		0.415	0.55	mA
ICTLAC1 output voltage swing (PWM charge)	I_ICTLAC1 = –10 μA, ACPATHEN = 1, PWMEN = 1, PWMDTYCY = 0x000	VAC–0.3			V
ICTLAC1 output voltage swing (PWM charge)	I_ICTLAC1 = 10 μA, ACPATHEN = 1, PWMEN = 1, PWMDTYCY = 0x3FF			0.35	V
ICTLAC1 output voltage swing (linear charge)	I_ICTLAC1 = –10 μA, ACPATHEN = 1, LINCHEN = 1, MESBAT = 1, CHGVREG = 0x000	VAC–0.3			V
ICTLAC1 output voltage swing (linear charge)	I_ICTLAC1 = 10 μA, ACPATHEN = 1, LINCHEN = 1, MESBAT = 1, CHGVREG = 0x3FF			0.35	V
ICTLUSB1 output voltage swing (linear charge)	I_ICTLUSB1 = –10 μA, USBPATHEN = 1, LINCHEN = 1, MESBAT = 1, CHGVREG = 0x000	VBUS–0.3			V
ICTLUSB1 output voltage swing (linear charge)	I_ICTLUSB1 = 10 μA, USBPATHEN = 1, LINCHEN = 1, MESBAT = 1, CHGVREG = 0x3FF			0.35	V
ICTLAC2 output voltage swing (linear charge)	I_ICTLAC2 = –10 μA, ACPATHEN = 1, LINCHEN = 1, ACPATHEN = 0	VCCS–0.3			V
ICTLAC2 output voltage swing (linear charge)	I_ICTLAC2 = 10 μA, ACPATHEN = 1, LINCHEN = 1, ACPATHEN = 1			0.35	V
ICTLUSB2 output voltage swing (linear charge)	I_ICTLUSB2 = –10 μA, USBPATHEN = 1, LINCHEN = 1, USBPATHEN = 0	VCCS–0.3			V
ICTLUSB2 output voltage swing (linear charge)	I_ICTLUSB2 = 10 μA, USBPATHEN = 1, LINCHEN = 1, USBPATHEN = 1			0.35	V
PWM mode output current	PWM = 1 (ICTLAC1 = 0), VAC = 6.8 V		5.0		mA
PWM mode output current	PWM = 0 (ICTLAC1 = VAC), VAC = 6.8 V		–2.0		mA
ac main charge battery removal switch-off time	CHGIREG = (value relative to I_CHG = 0.6 A), VAC = 5.4 V, C = 100 nF connected to ICTLAC1, VBAT threshold = 4.55 V, measure charge current from removal to 10% Miller compensation			150	μs
ac main charge battery removal switch-off time	CHGIREG = (value relative to I_CHG = 0.6 A), VAC = 5.4 V, C = 100 nF connected to ICTLAC1, VBAT threshold = 4.55 V, measure charge current from removal to 10% Regular compensation			150	μs
USB main charge battery removal switch-off time	CHGIREG = (value relative to I_CHG = 0.6 A), VBUS = 5.0 V, C = 100 nF connected to ICTLUSB1, VBAT threshold = 4.55 V, measure charge current from removal to 10%			150	μs
VAC-to-MADC input attenuation	VAC from 4.8 V to 6.8 V (maximum MADC input voltage = 1.224 V)	0.12	0.15	0.18	V/V
VBAT-to-MADC input attenuation	VBAT from 3.0 V to 4.5 V (maximum MADC input voltage = 1.35 V)	0.2	0.25	0.3	V/V
Current-to-voltage conversion slope⁽²⁾	(VCCS–VBATS) rising from 0 V to 0.17 V: CGAIN = 0 equivalent to 0–775 mA range	0.704	0.88	1.056	mV/mA
Current-to-voltage conversion slope⁽²⁾	(VCCS–VBATS) rising from 0 V to 0.33 V: CGAIN = 1 equivalent to 0–1500 mA range	0.352	0.44	0.528	mV/mA
Current-to-voltage conversion positive offset	OFFSEN = 1, OFFSN[1:0] = 00, CGAIN = 0, OFFSIGN = 0		18.7		mV
	OFFSEN = 1, OFFSN[1:0] = 01, CGAIN = 0, OFFSIGN = 0		38.8
	OFFSEN = 1, OFFSN[1:0] = 10, CGAIN = 0, OFFSIGN = 0		60.1
	OFFSEN = 1, OFFSN[1:0] = 11, CGAIN = 0, OFFSIGN = 0		82.6
Current-to-voltage conversion negative offset	OFFSEN = 1, OFFSN[1:0] = 00, CGAIN = 0, OFFSIGN = 1		–18.2		mV
	OFFSEN = 1, OFFSN[1:0] = 01, CGAIN = 0, OFFSIGN = 1		–35.6
	OFFSEN = 1, OFFSN[1:0] = 10, CGAIN = 0, OFFSIGN = 1		–52.2
	OFFSEN = 1, OFFSN[1:0] = 11, CGAIN = 0, OFFSIGN = 1		–67.6
Charge voltage and charge current DAC	Linear range	1FF		3BA	hex
	Differential nonlinearity	–2		2	LSB
	Integrated nonlinearity	–2		2	LSB
	Offset	–25		25	mV
ADIN0 dc current source	ADIN0 = 1 V	7	10	13	μA
ADCIN1 dc current source	ADCIN1 = 1 V, ITHSENS[2:0] = 000 (maximum MADC input voltage = 0.875 V), After TRIM done by ISRCTRIM[3:0], at ambient temperature	9.875	10	10.125	μA
ADCIN1 dc current source for temperature measurement	ADCIN1 = 1 V, ITHSENS[2:0] = 000 (maximum MADC input voltage = 0.875 V), after TRIM done by ISRCTRIM[3:0]	9.5	10	10.5	μA
	ITHSENS[2:0] = 001	14	20	26
	ITHSENS[2:0] = 010	21	30	39
	ITHSENS[2:0] = 011	28	40	52
	ITHSENS[2:0] = 100	35	50	65
	ITHSENS[2:0] = 101	42	60	78
	ITHSENS[2:0] = 110	49	70	91
	ITHSENS[2:0] = 111	56	80	104
Constant current loop accuracy	After trimming (±1.10%), VAC = 5.4 V or VBUS = 5.0 V, VBAT = 3.6 V, CHGIREG = (value relative to I_CHG = 0.6 A), VCCS–VBATS rising voltage, monitoring ICTLAC1 or ICTLUSB1, CGAIN = 1, overtemperature (ambient 0°C to 50°C) (including the bandgap accuracy overtemperature ±0.5% and the R_sense resistor accuracy ±1%)	–11%		11%
Constant current loop accuracy	After trimming (±0.55%), VAC = 5.4 V or VBUS = 5.0 V, VBAT = 3.6 V, CHGIREG = (value relative to I_CHG = 0.6 A), VCCS–VBATS rising voltage, monitoring ICTLAC1 or ICTLUSB1, CGAIN = 0, overtemperature (ambient 0°C to 50°C) (including the bandgap accuracy overtemperature ±0.5% and the R_sense resistor accuracy ±1%)	–3.15%		3.15%
Constant current loop offset	At error amplifier input, before loop trim. Including DAC offset, I-to-V offset after I-to-V trim, error amplifier offset	–46.8		46.8	mV
Constant voltage loop accuracy	After trimming (±0.14%), VAC = 5.4 V or VBUS = 5.0 V, at room temperature, CHGVREG = (value relative to VBAT = 4.37 V), VBAT rising voltage, monitoring ICTLAC1 or ICTLUSB1	–0.28%		0.28%
Constant voltage loop accuracy	After trimming (±0.14%), VAC = 5.4 V or VBUS = 5.0 V overtemperature (ambient 0°C to 50°C), CHGVREG = (value relative to VBAT = 4.37 V), VBAT rising voltage, monitoring ICTLAC1 or ICTLUSB1 (including the bandgap accuracy overtemperature ±0.5%)	–0.82%		0.82%
Charger presence detect threshold	VBAT = 3.6 V, rising edge	VBAT+0.3	VBAT+0.4	VBAT+0.6	V
Charger presence detect threshold	VBAT = 3.6 V, falling edge	VBAT	VBAT+0.1	VBAT+0.3	V
Battery threshold when default value⁽³⁾	VAC = 5.4 V or VBUS = 5.0 V, VBATOVEN = 1, VBATOVTH(3:0) = default, MESBAT = 1, VBAT rising voltage, monitoring VBATOV status signal	4.45	4.55	4.65	V
ac charger overvoltage threshold when default value⁽³⁾	VBAT = 3.6 V, VACCHGOVEN = 1, VACCHGOVTH(3:0) = default, VAC rising voltage, monitoring VACCHGOV status signal	6.24	6.5	7	V
VBUS overvoltage threshold when default value⁽³⁾	VBAT = 3.6 V, VBUSOVEN = 1, VBUSOVTH(3:0) = default, VBUS rising voltage, monitoring VBUSOV status signal	5.28	5.5	5.9	V
Main charge main battery presence impedance detection threshold	Measured through ADCIN1 rising voltage and sourced current, monitoring BATSTS value	67.5	75	82.5	kΩ
Main charge main battery presence voltage detection threshold	Force ADCIN1 voltage, monitor BATSTS value		750		mV
Temperature detection accuracy	For low temperature (2°C/3°C) For high temperature (43°C/50°C)	–3 –5		3 5	°C
Battery voltage accuracy	Tested for VBAT = 2.9, 3.6, and 4.2 V	VBAT–0.1	VBAT	VBAT+0.1	V
Current charge accuracy	Tested for ICHG = 600 mA	ICHG–0.04	ICHG	ICHG+0.04	A
Battery Rs	ESR (including FUSE)			0.5	Ω

(1) The maximum voltage value of the charging device is 7 V (process limitation). The minimum voltage value of the charging device is:
VBATMAX + 2 PMOS drop + 0.22 Ω resistor drop
(where VBATMAX is the maximum voltage value of the battery; that is, 4.2 V for Li-ion battery)
User must consider maximum dissipation while using maximum ac/USB voltage (7 V) or maximum current load (1.7 A).

(2) MADC output code = (VCCS – VBATS) × 4 with CGAIN = 0
MADC output code = (VCCS – VBATS) × 2 with CGAIN = 1

(3) Can be changed by programming the associated threshold register

5.5.3.2 Precharge

During slow precharge and fast precharge, a precharge voltage loop is always enabled and limits the battery voltage charge to 3.6 V typical. To use the constant voltage loop, a battery voltage prescaler is also always enabled. The voltage loop is nonlinear. A fast comparator switches off the external power portable media operating system (PMOS) when VBAT is higher than 3.6 V and switches on the PMOS when VBAT is lower than 3.6 V. When the USB charger is used, fast precharge is not available (to comply with USB standards).

In precharge mode, the threshold of the ac charger overvoltage detection is forced to 6.8 V.

Table 5-71 lists the precharge electrical characteristics.

Table 5-71 Precharge Electrical Characteristics
R_S = 0.22 Ω, unless otherwise specified

Parameter	Test Conditions	Min	Typ	Max	Unit
ICTLAC1 output voltage swing (precharge)	I_ICTLAC1 = –10 μA, VBAT = 1.5 V, VCCS = VBAT+200 mV, VAC = 5.4 V, SYSACTIV = 0	VAC–0.3			V
ICTLAC1 output voltage swing (precharge)	I_ICTLAC1 = 10 μA, VBAT = 1.5 V, VCCS = VBAT, VAC = 5.4 V, SYSACTIV = 0			0.35	V
ICTLUSB1 output voltage swing (precharge)	I_ICTLUSB1 = –10 μA, VBAT = 1.5 V, VCCS = VBAT+200 mV, VAC = 0.0 V, VBUS = 5 V, SYSACTIV = 0	VAC–0.3			V
ICTLUSB1 output voltage swing (precharge)	I_ICTLUSB1 = 10 μA, VBAT = 1.5 V, VCCS = VBAT, VAC = 0.0 V, VBUS = 5 V, SYSACTIV = 0			0.35	V
ICTLAC2 output voltage swing (precharge)	I_ICTLAC2 = –10 μA, VBAT = 1.5 V, VCCS = VBAT+200 mV, VAC = 5.4 V, SYSACTIV = 0	VCCS–0.3			V
ICTLAC2 output voltage swing (precharge)	I_ICTLAC2 = 10 μA, VBAT = 1.5 V, VCCS = VBAT, VAC = 5.4 V, SYSACTIV = 0			0.35	V
ICTLUSB2 output voltage swing (precharge)	I_ICTLUSB2 = –10 μA, VBAT = 1.5 V, VCCS = VBAT+200 mV, VAC = 0.0 V, VBUS = 5 V, SYSACTIV = 0	VCCS–0.3			V
ICTLUSB2 output voltage swing (precharge)	I_ICTLUSB2 = 10 μA, VBAT = 1.5 V, VCCS = VBAT, VAC = 0.0 V, VBUS = 5 V, SYSACTIV = 0			0.35	V
ac precharge battery removal switch-off time	In fast precharge, Rlimit = 700 kΩ, VAC = 5.4 V, VBAT threshold = 3.6 V, measure charge current from removal to 10%			150	μs
USB precharge battery removal switch-off time	In precharge, Rlimit = 500 kΩ, VBUS = 5.0 V, VBAT threshold = 3.6 V, measure charge current from removal to 10%			150	μs
PCHGPOR voltage threshold	VAC = 5.4 V or VBUS = 5.0 V, PCHGPOR raise when VPRECH voltage higher than the voltage threshold		1.2		V
PCHGCLK click frequency	VAC = 5.4 V or VBUS = 5.0 V (including temperature variation)	18.5	32	45.4	kHz
PCHGCLK click frequency	VAC = 5.4 V or VBUS = 5.0 V (at room temperature)	24.3	32	39.68	kHz
PCHGVREF band gap voltage	VAC = 5.4 V or VBUS = 5.0 V	0.7125	0.75	0.7875	V
VPRECH regulator output	VAC = 5.4 V or VBUS = 5.0 V	1.4	1.5	1.6	V
Small precharge output current	VBAT = 0.0 V, VAC = 5.4 V or (VBUS = 5.0 V and USBSLOWPCHG = 1)	3	5	7	mA
Slow precharge loop accuracy	After TRIMinG, VAC = 5.4 V or VBUS = 5.0 V, VBAT = 1.5 V, VCCS–VBATS rising voltage, monitoring ICTLAC1 or ICTLUSB1	14	17.2	20.3	mV
Fast precharge loop accuracy	After TRIMinG, PCHGAC or PCHGUSB floating, VAC = 5.4 V, VBAT = 3.0 V, VCCS–VBATS rising voltage, monitoring ICTLAC1 or ICTLUSB1	56	68.8	81.2	mV
Precharge constant voltage loop limitation	System did not start after VBAT > 3.2 V, VBATS input.	3.4	3.6	3.8	V
VBUSOVPRECH threshold (for USB reliability)	VBUS input	5.04	5.25	5.46	V
ac charger overvoltage threshold	VBAT = 2.8 V, VAC input	6.5	6.8	7.3	V
VBUS overvoltage threshold	VBAT = 2.8 V, VBUS input	6.5	6.8	7.3	V
Battery voltage threshold to start ac fast precharge	VBATS input	1.8	2.0	2.2	V
Battery voltage threshold to start ac slow precharge	VBATS input	1.0	1.2	1.4	V
Charger presence detect threshold	VBATS = 2.8 V, rising edge	VBAT+0.3	VBAT+0.4	VBAT+0.6	V
Charger presence detect threshold	VBATS = 2.8 V, falling edge	VBAT	VBAT+0.1	VBAT+0.3	V
VBUS presence detect threshold	Rising edge			4.4	V
VBUS presence detect threshold	Falling edge			4.3	V
BCIAUTO detection impedance threshold	To obtain CVENACA = BCIAUTOACA = 0			10	kΩ
BCIAUTO detection impedance threshold	To obtain CVENACA = BCIAUTOACA = 1	140			kΩ
BCIAUTO detection voltage threshold	CVENACA = 0 below the voltage threshold	100	150	200	mV
BCIAUTO detection voltage threshold	CVENACA = 1 below the voltage threshold	700	750	800	mV
BCIAUTO detection output current	Measured on BCIAUTO pin	4.5	7.5	9.5	μA
Precharge main battery presence impedance detection threshold	Measured through ADCIN1 rising voltage and sourced current, monitoring BATSTS value	115	140	192	kΩ
Precharge main battery presence voltage detection threshold	Force ADCIN1 voltage, monitor BATSTS value.		750		mV
Precharge main battery presence detection output current	Measured on ADCIN1 pin		5.5		μA

5.5.3.3 Constant Voltage Mode

The BCI supports a constant voltage (CV) mode. CV mode is automatically started when there is no battery pack, a regulated ac charger is plugged in, and CVENAC = 1. The charging device outputs a constant voltage at the VBAT node. To start CV mode, the precharge analog hardware detects whether a battery pack is open using the battery presence comparator, and detects whether an ac charger is connected using the ac charger presence comparator.

CV mode is disabled when VAC is greater than 6.5 V typical. ac overvoltage protection is also enabled during CV mode.

Hardware implementation for CV mode uses the main charge constant voltage loop. In CV mode, a 35-mA typical load is synced internally to keep the regulated VBAT voltage output stable. An 80-μF typical external capacitor must be connected to the VBAT node.

Table 5-72 lists the electrical characteristics of CV mode.

Table 5-72 CV Mode Electrical Characteristics⁽¹⁾

Parameter	Test Conditions	Min	Typ	Max	Unit
Main charge constant voltage mode	VAC = 5.4 V, ADCIN1 pin floating, LDOOK = 1
CBAT	Battery node capacitor	37	80	167	μF
CBAT	ESR (including FUSE)		0.4	0.5	Ω
VBAT regulated voltage, including dc (posttrim), dc load regulation, and dc line regulation	Typical condition is VBAT for VAC = 5.4 V, ILOAD = 0.5 A	3.88	4.0	4.12	V
	dc load regulation: VAC = VACmin, ILOAD varying from 0 to ILOADmax
	dc line regulation: ILOAD = ILOADmax, VAC varying from VACmin to VACmax
	Maximum condition is ILOAD = 0, VAC = 6.2 V
	Minimum condition is ILOAD = 1 A, VAC = 4.8 V
ILOAD				1	A
BCI VBAT load current	VAC = 5.4 V	15	35	55	mA
VAC		4.8	5.4	6.2	V
Transient load regulation during internal LDO startup	VBAT(Iout 20 mA) – VBAT(Iout 500 mA) in load change time = 1 μs (BCI in precharge CV mode)	300		300	mV
Transient load during LDO and DC-DC startup	VBAT(Iout 30 mA) – VBAT(Iout 830 mA) in load change time = 1 μs (BCI in main charge CV mode)	300		300	mV
Transient load regulation	VBAT(Iout 30 mA) – VBAT(Iout 300 mA) in load change time = 1 μs (BCI in main charge CV mode) (ESR = 0.4 Ω)	100		100	mV

(1) In CV mode, an external FET characteristic is critical. This mode has been validated for FDJ1027P FET.

5.5.4 Charge Sequence Timing Diagram

Figure 5-57 is the charge sequence timing diagram.

Figure 5-57 Automatic Charge Sequence Timing Diagram

5.5.5 CEA Charger Type

Depending on the device and according to the charger type, the DM and DP lines have different characteristics:

Hub: DP and DM not shorted, DM low
Charger: DP and DM shorted
Carkit: DP and DM not shorted, DM high

These characteristics reflect to which of these devices the phone is connected.

Table 5-73 lists the important characteristics in precharge detection.

Table 5-73 Precharge Detection Characteristics

Symbol	Parameter	Comments	Min	Max	Unit
I_CCINIT	Supply current of unconfigured function/hub	Hub: DP and DM not shorted, DM low		100	mA
I_CRINIT	Supply current of unconfigured charger/carkit	Charger: DP and DM shorted Carkit: DP and DM not shorted, DM high		100	mA
T_DELAY	Delay for power up all blocks		1000		μs
T_{DMOD_DELAY}	Time pulling down DM line		19.5		μs
T_CHECK	Repeat time check process			500	ms
T_PULSE	DP pullup pulse width			20	ms

In main charge, the basic chargers and basic carkits indicate their default current limit, versus the value of the ID resistor, between the ID pin and the ground, and also versus the data bus D± connection type (shorted or not shorted).

Table 5-74 lists the output current limit ranges according to the device type and parameters.

Table 5-74 Main Charge Current Limit Indication

Device Type	Parameter					Output Current Limit
Device Type	ID Resistor (1%)	Output Voltage (nom)	D+/D– Connection⁽²⁾	ID Pin State	ID Pin Current Limit Implemented	Min	Max	Unit
Phone-powered accessory	102k	N/A⁽¹⁾	Not shorted	N/A	N/A	N/A	N/A
Charger 5-wire	200k	5.0 V	Shorted	Low	N/A	450	650	mA
				High	No	450	650
				High	Yes	750	950
	440k	5.0 V	Shorted	Low	N/A	750	950	mA
		5.0 V	Shorted	High	No	750	950	mA
		4.5 V	Shorted	High	Yes	1.8	3.0⁽³⁾	A
Basic carkit 5-wire	200k	5.0 V	D-high	Used for muting	N/A	450	650	mA
Basic carkit 5-wire	440k	5.0 V	D-high	Used for muting	N/A	750	950	mA
Smart carkit 5-wire	N/A	5.0 V	D-high	N/A	N/A	0.450	3.0⁽³⁾	A
Carkit 4-wire	N/A	5.0 V	D-high	N/A	N/A	0.450	3.0⁽³⁾	A

(1) N/A = Not applicable

(2) Shorted indicates that D+ (DP) is shorted to D– (DM).

(3) The maximum current limit in this configuration is for safety. It does not indicate normal current loads for the phone.

5.6 MADC

5.6.1 General Description

The TPS65950 shares the MADC resource with the host processors in the system (hardware and software conversion modes) and its BCI. Therefore, the TPS65950 must:

Manage potential concurrent requests of conversions and priority among resource users
Flag, using interrupt signals, the end-of-sequence of conversions
Grant quarter-bit accuracy for modem conversion of battery voltage

The quarter-bit accurate start signal is provided through a STARTADC from the host processor (real-time conversion).

The MADC generates interrupt signals to the host processors. Interrupts are handled primarily by the MADC internal secondary interrupt handler (SIH) and secondly at the upper level (outside the MADC) by the TPS65950 primary interrupt handler (PIH). The MADC indicates to the BCI module, through a data ready signal, that conversion results are available.

5.6.2 Main Electrical Characteristics

Table 5-75 lists the electrical characteristics of the MADC.

Table 5-75 Electrical Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Resolution			10		Bit
Input dynamic range for external input	Except ADIN0 and ADCIN1 and internal MADC input (0 to 1.5 V)	0		2.5	V
MADC voltage reference			1.5		V
Differential nonlinearity	For all channels (except ADIN2 through ADIN7 channels)	–1		1	LSB
Integral nonlinearity	Best fitting. For all channels (except ADIN2 through ADIN7)	–2		2	LSB
Differential nonlinearity for ADIN2 through ADIN7		–1		1	LSB
Integral nonlinearity for ADIN2 through ADIN7	Best fitting for codes 230 to maximum	–2		2	LSB
Integral nonlinearity for ADIN2 through ADIN7	Best fitting considering offset of 25 least-significant bits (LSBs)	–3.75		3.75	LSB
Offset	Best fitting	–28.5		28.5	mV
Input bias			1		μA
Input capacitor C_BANK				10	pF
Maximum source input resistance Rs (for all 16 internal or external inputs)				100	kΩ
Input current leakage (for all 16 internal or external inputs)				1	μA

5.6.3 Channel Voltage Input Range

Table 5-76 lists the channel voltage input ranges.

Table 5-76 Analog Input Voltage Range

Channel	Max	Unit	Prescaler
ADIN0: Battery type/GP input	1.5	V	No prescaler dc current source for battery identification through external resistor (10 μA typical)
ADCIN1: Battery temperature	1.5	V	No prescaler dc current source for temperature measurement through external resistor (10 to 80 μA programmable)
ADIN2: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V
ADIN3: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V
ADIN4: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V
ADIN5: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V
ADIN6: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V
ADIN7: GP input⁽¹⁾	2.5	V	MADC prescaler from 0 to >1.5 V

(1) GP inputs must be tied to ground when TPS65950 internal power supplies (VINTANA1 and VINTANA2) are off.

5.6.3.1 Sequence Conversion Time (Real-Time or Nonaborted Asynchronous)

Table 5-77 lists the sequence conversion timing characteristics. Figure 5-58 is a conversion sequence general timing diagram.

Table 5-77 Sequence Conversion Timing Characteristics

Parameter	Comments	Min	Typ	Max	Unit
F	Running frequency		1		MHz
T = 1/F	Clock period		1		μs
N	Number of analog inputs to convert in a single sequence	0		16
Tstart	SW1, SW2, or USB asynchronous request or real-time STARTADC request	3		4	μs
Tsettling time	Settling time to wait before sampling a stable analog input (capacitor bank charge time)	5	12	20	μs
Tsettling time	Tsettling is calculated from the max ((Rs + Ron)*Cbank) of the 16 possible input sources (internal or external). Ron is the resistance of the selection analog input switches (5 kΩ). This time is software-programmable in the open-core protocol (OCP) register.	5	12	20	μs
Tstartsar	The successive approximation registers ADC start time.		1		μs
Tadc time	The successive approximation registers ADC conversion time.		10		μs
Tcapture time	Tcapture time is the conversion result capture time.		2		μs
Tstop		1		2	μs
Full conversion sequence time	One channel (N = 1)⁽¹⁾	22		39	μs
Full conversion sequence time	All channels (N = 16)⁽¹⁾	352		624	μs
Conversion sequence time	Without Tstart and Tstop: One channel (N = 1)⁽¹⁾	18		33	μs
Conversion sequence time	Without Tstart and Tstop: All channels (N = 16)⁽¹⁾	288		528	μs
STARTADC pulse duration	STARTADC period is T	0.33		24	μs

(1) Total sequence conversion time general formula: Tstart + N*(1 + Tsettling + Tadc + Tcapture) +Tstop

Table 5-77 shows the information in Figure 5-58. The Busy parameter shows that a conversion sequence is running, and the channel N result register parameter corresponds to the result register of RT/GP/BCI selected channel.

Figure 5-58 Conversion Sequence General Timing Diagram

5.7 LED Drivers

5.7.1 General Description

Two arrays of parallel LEDs are driven (dedicated for the phone light). The parallel LEDs are supplied by VBAT and the external resistor value is given for each of them. The TPS65950 has two open-drain LED drivers for keypad backlighting. The keypad backlighting must incorporate any required current limiting and be rated for operation at the main battery voltage.

Figure 5-59 is a block diagram of the LED driver. Table 5-78 lists the electrical characteristics of the LED driver.

Figure 5-59 LED Driver Block Diagram

For the component values, see Table 5-92.

Table 5-78 Electrical Characteristics

Parameter	Conditions	Min	Typ	Max	Unit
Software On resistance	I_O = 160 mA		3	4	Ω
Software On resistance	I_O = 60 mA		10	12	Ω

5.8 Keyboard

5.8.1 Keyboard Connection

The keyboard is connected to the chip using:

KBR (7:0) input pins for row lines
KBC (7:0) output pins for column lines

Figure 5-60 shows the keyboard connection.

Figure 5-60 Keyboard Connection

When a key button of the keyboard matrix is pressed, the corresponding row and column lines are shorted together. To allow key press detection, all input pins (KBR) are pulled up to V_CC and all output pins (KBC) are driven low.

Any action on a button generates an interrupt to the sequencer.

The decoding sequence is written to allow detection of simultaneous press actions on several key buttons.

The keyboard interface can be used with a smaller keyboard area than 8 × 8. To use a 6 × 6 keyboard, KBR(6) and KBR(7) must be tied high to prevent any scanning process distribution.

5.9 Clock Specifications

The TPS65950 includes several I/O clock pins. The TPS65950 has two sources of high-stability clock signals: the external high-frequency clock (HFCLKIN) input and an onboard 32-kHz oscillator (an external 32-kHz signal can be provided). Figure 5-61 is an overview of the clocks.

Figure 5-61 Clock Overview

5.9.1 Features

The TPS65950 accepts two sources of high-stability clock signals:

32KXIN/32KXOUT: Onboard 32-kHz crystal oscillator (an external 32-kHz input clock can be provided)
HFCLKIN: External high-frequency clock (19.2, 26, or 38.4 MHz).

The TPS65950 can provide:

32KCLKOUT digital output clock
HFCLKOUT digital output clock with the same frequency as the HFCLKIN input clock

5.9.2 Input Clock Specifications

The clock system accepts two input clock sources:

32-kHz crystal oscillator clock or sinusoidal/squared clock
HFCLKIN high-frequency input clock

5.9.2.1 Clock Source Requirements

Table 5-79 lists the input clock requirements.

Table 5-79 TPS65950 Input Clock Source Requirements

Pad	Clock Frequency		Stability	Duty Cycle
32KXIN 32KXOUT	32.768 kHz	Crystal	±30 ppm	40%/60%
		Square wave	–	45%/55%
		Sine wave	–	–
HFCLKIN	19.2, 26, 38.4 MHz	Square wave	±150 ppm	See ⁽¹⁾
HFCLKIN	19.2, 26, 38.4 MHz	Sine wave	–	–

(1) HFCLK duty cycle and frequency is not altered by the internal circuit. The input clock accuracy must match that of the system requirement, for example, OMAP device.

5.9.2.2 High-Frequency Input Clock

HFCLKIN is the high-frequency input clock. It can be a square- or sine-wave input clock. If a square-wave input clock is provided, it is recommended to switch the block to bypass mode when possible to avoid loading the clock.

Figure 5-62 shows the HFCLKIN clock distribution.

Figure 5-62 HFCLKIN Clock Distribution

When a device needs a clock signal other than 32.768 kHz, it makes a clock request and activates the CLKREQ pin. As a result, the TPS65950 immediately sets CLKEN to 1 to warn the clock provider in the system about the clock request and starts a timer (maximum of 5.2 ms using the 32.768-kHz clock). When the timer expires, the TPS65950 opens a gated clock, the timer automatically reloads the defined value, and a high-frequency output clock signal is available through the HFCLKOUT pin. The output drive of HFCLKOUT is programmable (minimum load 10 pF, maximum load 40 pF) and must be at 40 pF by default.

With a register setting, the mirroring of CLKEN can be enabled on CLKEN2. When this mirroring feature is not enabled, CLKEN2 can be used as a GP output controlled through I²C accesses.

CLKREQ, when enabled, has a weak pulldown resistor to support the wired-OR clock request.

Figure 5-63 shows an example of the wired-OR clock request.

Figure 5-63 Example of Wired-OR Clock Request

NOTE

The timer default value must be the worst case (10 ms) for the clock providers. For legacy or workaround support, the signals NSLEEP1 and NSLEEP2 can also be used as a clock request even if it is not their primary goal. By default, this feature is disabled and must be enabled individually by setting the register bits associated with each signal.

When the external clock signal is present on the HFCLKIN ball, it is possible to use this clock instead of the internal RC oscillator and then synchronize the system on the same clock. The RC oscillator can then go to idle mode.

Table 5-80 lists the input clock electrical characteristics of the HFCLKIN input clock.

Table 5-80 HFCLKIN Input Clock Electrical Characteristics

Parameter	Configuration Mode Slicer	Min	Typ	Max	Unit
Frequency		19, 26, or 38.4			MHz
Startup time	LP/HP (sine wave)			4	μs
Input dynamic range	LP/HP (sine wave)	0.3	0.7	1.45	V_PP
	BP/PD (square wave)	0		1.8⁵⁽¹⁾
Current consumption	LP			175	μA
	HP			235
	BP/PD			39	nA
Harmonic content of input signal (with 0.7-V_PP amplitude): second component	LP/HP (sine wave)			–25	dBc
Voltage input high (V_IH)	BP (square wave)	1			V
Voltage input low (V_IL)	BP (square wave)			0.6	V

(1) Bypass input max voltage is the same as the maximum voltage provided for the I/O interface (IO.1P8V).

Table 5-81 lists the input clock timing requirements of the HFCLKIN input clock when the source is a square wave.

Table 5-81 HFCLKIN Square Input Clock Timing Requirements With Slicer in Bypass

Name	Parameter	Description	Min	Max	Unit
CH0	1/t_C(HFCLKIN)	Frequency, HFCLKIN	19.2, 26, or 38.4		MHz
CH1	t_W(HFCLKIN)	Pulse duration, HFCLKIN low or high	0.45*t_C(HFCLKIN)	0.55*t_C(HFCLKIN)	ns
CH3	t_R(HFCLKIN)	Rise time, HFCLKIN⁽¹⁾		5	ns
CH4	t_F(HFCLKIN)	Fall time, HFCLKIN⁽¹⁾		5	ns

(1) Default drive capability is 40 pF.

Figure 5-64 shows the timing of the HFCLKIN squared input clock.

Figure 5-64 HFCLKIN Squared Input Clock

5.9.2.3 32-kHz Input Clock

A 32.768-kHz input clock (often abbreviated to 32-kHz) generates the clocks for the RTC. It has a low-jitter mode where the current consumption increases for lower jitter. It is possible to use the 32-kHz input clock with an external crystal or clock source. Depending on the mode, the 32K oscillator is configured as being either:

An external 32.768-kHz crystal through the 32KXIN/32KXOUT balls (see Figure 5-65). This configuration is available for master mode only (for more information, see Section 4.7, Timing Requirements and Switching Characteristics).
An external square or sine wave of 32.768 kHz through 32KXIN with amplitude of 1.8 or 1.85 V (see Figure 5-67, Figure 5-68, and Figure 5-69). This configuration is available for master and slave modes (for more information, see Section 4.7, Timing Requirements and Switching Characteristics).

5.9.2.3.1 External Crystal Description

Figure 5-65 is a block diagram of the 32-kHz oscillator with crystal in master mode.

Switches close by default and open only if register access enables very-low-power mode when VBAT < 2.7 V.

Figure 5-65 32-kHz Oscillator Block Diagram In Master Mode With Crystal

CXIN and CXOUT represent the total capacitance of the printed circuit board (PCB) and components, excluding the crystal. Their values depend on the datasheet of the crystal, the internal capacitors, and the parallel capacitor. The frequency of the oscillations depends on the value of the capacitors. The crystal must be in the fundamental mode of operation and parallel resonant.

NOTE

For the values of CXIN and CXOUT, see Table 5-92.

Table 5-82 lists the required electrical constraints.

Table 5-82 Crystal Electrical Characteristics

Parameter	Min	Typ	Max	Unit
Parallel resonance crystal frequency		32.768		kHz
Input voltage, Vin (normal mode)	1.0	1.3	1.55	V
Internal capacitor on each input (Cint)		10		pF
Parallel input capacitance (Cpin)			1	pF
Nominal load cap on each oscillator input CXIN and CXOUT⁽¹⁾	CXIN = CXOUT = Cosc*2 – (Cint + Cpin)			pF
Pin-to-pin capacitance		1.6	1.8	pF
Crystal ESR⁽²⁾			75	kΩ
Crystal shunt capacitance, C_O			1	pF
Crystal tolerance at room temperature, 25°C	–30		30	ppm
Crystal tolerance versus temperature range (–40°C to 85°C)	–200		200	ppm
Maximum drive power			1	μW
Operating drive level			0.5	μW

(1) Nominal load capacitor on each oscillator input defined as CXIN = CXOUT = Cosc*2 – (Cint + Cpin). Cosc is the load capacitor defined in the crystal oscillator specification, Cint is the internal capacitor, and Cpin is the parallel input capacitor.

(2) The crystal motional resistance Rm relates to the equivalent series resistance (ESR) by the following formula:

Measured with the load capacitance specified by the crystal manufacturer. If CXIN = CXOUT = 10 pF, then C_L = 5 pF. Parasitic capacitance from the package and board must also be considered.

When selecting a crystal, the system design must consider the temperature and aging characteristics of a crystal versus the user environment and expected lifetime of the system.

Table 5-83 and Table 5-84 list the switching characteristics of the oscillator and the input requirements of the 32.768-kHz input clock, respectively. Figure 5-66 shows the crystal oscillator output in normal mode.

Table 5-83 Base Oscillator Switching Characteristics

Name	Parameter Description		Typ	Max	Unit
f_P	Oscillation frequency		32.768		kHz
t_SX	Startup time			0.5	s
I_DDA	Active current consumption	LOJIT <1:0> = 00		1.8	μA
I_DDA	Active current consumption	LOJIT <1:0> = 11		8	μA
I_DDQ	Current consumption	Low battery mode (1.2 V)		1	μA
I_DDQ	Current consumption	Startup		8	μA

Table 5-84 32-kHz Crystal Input Clock Timing Requirements

Name	Parameter Description		Min	Typ	Max	Unit
OC0	1/t_C(32KHZ)	Frequency, 32 kHz		32.768		kHz
OC1	t_W(32KHZ)	Pulse duration, 32 kHz low or high	0.40*t_C(32KHZ)		0.60*t_C(32KHZ)	μs

Figure 5-66 32-kHz Crystal Input

5.9.2.3.2 External Clock Description

Figure 5-67 and Figure 5-68 show the 32-kHz oscillator with a 32.768-kHz square or sine signal in master and slave modes. Figure 5-69 shows an external clock source when the oscillator is configured in bypass mode. Thus, there are three configurations:

A square- or sine-wave input can be applied to the 32KXIN pin with an amplitude of 1.85 or 1.8 V. The 32KXOUT pin can be driven to a dc value of the square- or sine-wave amplitude divided by 2. This configuration, shown in Figure 5-67, is recommended if a large load is applied on the 32KXOUT pin.
A square- or sine-wave input can be applied to the 32KXIN pin with an amplitude of 1.85 or 1.8 V. The 32KXOUT pin can be left floating. This configuration, showed in Figure 5-68, is used if no charge is applied on the 32KXOUT pin.
The oscillator is in bypass mode and a square-wave input can be applied to the 32KXIN pin with an amplitude of 1.8 V. The 32KXOUT pin can be left floating. This configuration, shown in Figure 5-69, is used if the oscillator is in bypass mode.

1. Switches close by default and open only if register access enables very-low-power mode when VBAT < 2.7 V.

Figure 5-67 32-kHz Oscillator Block Diagram Without Crystal Option 1

1. Switches close by default and open only if register access enables very-low-power mode when VBAT < 2.7 V.

Figure 5-68 32-kHz Oscillator Block Diagram Without Crystal Option 2

1. Switches close by default and open only if register access enables very-low-power mode when VBAT < 2.7 V.

Figure 5-69 32-kHz Oscillator in Bypass Mode Block Diagram Without Crystal Option 3

Table 5-85 lists the electrical constraints required by the 32-kHz input square- or sine-wave clock used.

Table 5-85 32-kHz Input Square- or Sine-Wave Clock Source Electrical Characteristics

Name	Parameter Description	Min	Typ	Max	Unit
f	Frequency	32.768			kHz
C_I	Input capacitance		35		pF
C_FI	On-chip foot capacitance to GND on each input (see Figure 5-67, Figure 5-68, and Figure 5-69)		10		pF
V_PP	Square-/sine-wave amplitude in bypass mode or not		1.8⁽¹⁾		V
V_IH	Voltage input high, square wave in bypass mode	0.8			V
V_IL	Voltage input low, square wave in bypass mode			0.6	V

(1) Bypass input maximum voltage is the same as the maximum voltage provided for the I/O interface.

Table 5-86 lists the input requirements of the 32-kHz square-wave input clock.

Table 5-86 32-kHz Square-Wave Input Clock Source Timing Requirements

Name	Parameter	Description	Min	Max	Unit
CK0	1/t_C(32KHZ)	Frequency, 32 kHz	32.768		MHz
CK1	t_W(32KHZ)	Pulse duration, 32 kHz low or high	0.45*t_C(32KHZ)	0.55*t_C(32KHZ)	μs
CK3	t_R(32KHZ)	Rise time, 32 kHz⁽¹⁾		0.1*t_C(32KHZ)	μs
CK4	t_F(32KHZ)	Fall time, 32 kHz⁽¹⁾		0.1*t_C(32KHZ)	μs

(1) The capacitive load is 30 pF.

Figure 5-70 shows the timing of the 32-kHz square- or sine-wave input clock.

Figure 5-70 32-kHz Square- or Sine-Wave Input Clock

5.9.3 Output Clock Specifications

The TPS65950 provides two output clocks:

32KCLKOUT
HFCLKOUT

5.9.3.1 32KCLKOUT Output Clock

Figure 5-71 is a block diagram of the 32.768-kHz clock output.

Figure 5-71 32.768-kHz Clock Output Block Diagram

The TPS65950 has an internal 32.768-kHz oscillator connected to an external 32.768-kHz crystal through the 32KXIN/32KXOUT balls or an external digital 32.768-kHz clock through the 32KXIN input (see Figure 5-71). The TPS65950 also generates a 32.768-kHz digital clock through the 32KCLKOUT pin and can broadcast it externally to the application processor or any other devices. The 32KCLKOUT clock is broadcast by default in the TPS65950 active mode, but can be disabled if it is not used.

The 32.768-kHz clock (or signal) also clocks the RTC embedded in the TPS65950. The RTC is not enabled by default. The host processor must set the correct date and time and enable the RTC.

The 32KCLKOUT output buffer can drive several devices (up to a 40-pF load). At startup, the 32.768-kHz output clock (32KCLKOUT) must be stabilized (frequency/duty cycle) before the signal output. Depending on the startup condition, this can delay the startup sequence.

Table 5-87 lists the electrical characteristics of the 32KCLKOUT output clock.

Table 5-87 32KCLKOUT Output Clock Electrical Characteristics

Name	Parameter Description	Min	Typ	Max	Unit
f	Frequency		32.768		kHz
C_L	Load capacitance			40	pF
V_OUT	Output clock voltage, depending on output reference level IO_1P8 (see Section 3)		1.8⁽¹⁾		V
V_OH	Voltage output high	V_OUT – 0.45		V_OUT	V
V_OL	Voltage output low	0		0.45	V

(1) The output voltage depends on output reference level, which is IO_1P8 (see Section 3, Terminal Description).

Table 5-88 lists the timing characteristics of the 32KCLKOUT output clock. Figure 5-72 shows the waveform of the 32KCLKOUT output clock.

Table 5-88 32KCLKOUT Output Clock Switching Characteristics

Name	Parameter	Description	Min	Typ	Max	Unit
CK0	1/t_C(32KCLKOUT)	Frequency		32.768		MHz
CK1	t_W(32KCLKOUT)	Pulse duration, 32KCLKOUT low or high	0.40*t_C(32KCLKOUT)		0.60*t_C(32KCLKOUT)	ns
CK2	t_R(32KCLKOUT)	Rise time, 32KCLKOUT⁽¹⁾			16	ns
CK3	t_F(32KCLKOUT)	Fall time, 32KCLKOUT⁽¹⁾			16	ns

(1) The output capacitive load is 30 pF.

Figure 5-72 32KCLKOUT Output Clock

5.9.3.2 HFCLKOUT Output Clock

Table 5-89 lists the electrical characteristics of the HFCLKOUT output clock.

Table 5-89 HFCLKOUT Output Clock Electrical Characteristics

Name	Parameter Description	Min	Typ	Max	Unit
f	Frequency	19.2, 26, or 38.4			MHz
C_L	Load capacitance			30	pF
V_OUT	Output clock voltage, depending on output reference level IO_1P8 (see Section 3)		1.8⁽¹⁾		V
V_OH	Voltage output high	V_OUT – 0.45		V_OUT	V
V_OL	Voltage output low	0		0.45	V

(1) The output voltage depends on output reference level, which is IO_1P8 (see Section 3).

Table 5-90 lists the timing characteristics of the HFCLKOUT output clock.

Table 5-90 HFCLKOUT Output Clock Switching Characteristics

Name	Parameter	Description	Min	Max	Unit
CHO1	1/t_C(HFCLKOUT)	Frequency	19.2, 26, or 38.4		MHz
CHO2	t_W(HFCLKOUT)	Pulse duration, HFCLKOUT low or high	0.40*t_C(HFCLKOUT)	0.60*t_C(HFCLKOUT)	ns
CHO3	t_R(HFCLKOUT)	Rise time, HFCLKOUT⁽¹⁾		2.6	ns
CHO4	t_F(HFCLKOUT)	Fall time, HFCLKOUT⁽¹⁾		2.6	ns

(1) The output capacitive load is 30 pF.

Figure 5-73 shows the waveform of the HFCLKOUT output clock.

Figure 5-73 HFCLKOUT Output Clock

5.9.3.3 Output Clock Stabilization Time

Figure 5-74 shows the 32KCLKOUT and HFCLKOUT clock stabilization time.

Tstartup, Delay1, and Delay2 depend on the boot mode (see Section 5.1.5, Power Management).

Ensure that the high frequency oscillator start-up time is in spec for the boot mode used. During power-up the internal delay, Delay1 above is fixed (5.2 ms and 5.3 ms depending on boot mode). The start-up time for the oscillator must be less than the fixed delay.

Figure 5-74 32KCLKOUT and HFCLKOUT Clock Stabilization Time

Figure 5-75 shows the behavior of HFLCKOUT.

Figure 5-75 HFCLKOUT Behavior

5.10 Debouncing Time

Table 5-91 lists the debouncing functions.

Table 5-91 Debouncing Time

Debouncing Functions	Block	Programmable	Debouncing Time	Default
Main battery charged threshold (<3.2 V)	Battery monitoring	No	580 μs	580 μs
Main battery low threshold detection (<2.7 V)		No	60 μs	60 μs
Main battery plug detection (with charger connected)		No	60 μs	60 μs
Charger unplug detection⁽¹⁾	BCI (automatic charge)	No	1 x 50 ms	1 x 50 ms
Charger plug detection⁽¹⁾	BCI	No	9 x 50 ms	9 x 50 ms
Debouncing functions interrupt generation debounce for charger plug	Power	No	125.6 μs	125.6 μs
USB plug detection/VBUS precharge (same debouncing as charger plug) ⁽¹⁾	BCI	No	9 x 50 ms	9 x 50 ms
Battery presence plug/unplug⁽¹⁾	BCI	No	9 x 50 ms	9 x 50 ms
Battery thermistor in/out of range ⁽¹⁾	BCI	No	4 x 50 ms	4 x 50 ms
Plug/unplug detection VBUS⁽²⁾	USB	Yes	0 to 250 ms (32/32,468-second steps)	28 ms
Plug/unplug detection ID⁽³⁾	USB	Yes	0 to 250 ms (32/32,468-second steps)	50 ms
Debouncing functions interrupt generation debounce for VBUS and ID⁽⁴⁾	Power	Yes	0 to 250 ms	30 ms
Hot-die detection	Thermistor	No	60 μs	60 μs
Thermal shutdown detection		No	60 μs	60 μs
PWRON⁽⁵⁾	Start/stop button	No	31.25 ms	31.25 ms
NRESWARM	Button reset	No	60 μs	60 μs
SIM card plug/unplug	GPIO	Yes	0 or 30 ms ± 1 ms	0 ms
Headset detection (plug/unplug)	GPIO	Yes	0 or 30 ms ± 1 ms	0 ms
MMC1/2 (plug/unplug)	GPIO	Yes	0 or 30 ms ± 1 ms	0 ms

(1) According to the capture of the event, debouncing time can vary between 50 ms and 50 ms + dT (dT included in 0 < dT > 50 ms). Figure 5-76 shows and explains this possible variation of the debouncing time.

(2) Programmable in the VBUS_DEBOUNCE register

(3) Programmable in the ID_DEBOUNCE register

(4) Programmable in the RESERVED_E[2:0] CFG_VBUSDEB register

(5) The PWRON signal is debounced 1024 × CLK32K (maximum 1026 × CLK32K) falling edge in master mode.

Figure 5-76 Debouncing Sequence Chronogram Example

Event 1 is correctly debounced after 50 ms. Event 2 is debounced after 50 ms + dT because the capture of the event is considered after the next rising edge of the 50-ms clock.

5.11 External Components

Table 5-92 lists the external components of the TPS65950.

Table 5-92 TPS65950 External Components

Function	Component	Reference	Value	Note	Link
Power Supplies
VDD1	Capacitor	C_VDD1.IN	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD	Figure 5-1
	Capacitor	C_VDD1.OUT	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD
	Inductor	L_VDD1	1 μH	Range ± 30% DCR maximum = 100 mΩ
VDD2	Capacitor	C_VDD2.IN	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD	Figure 5-1
	Capacitor	C_VDD2.OUT	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD
	Inductor	L_VDD2	1 μH	Range ± 30% DCR maximum = 100 mΩ
VIO	Capacitor	C_VIO.IN	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD	Figure 5-1
	Capacitor	C_VIO.OUT	10 μF	Range ± 50% ESR minimum = 1 mΩ ESR maximum = 20 mΩ Taiyo Yuden: JMK212BJ106KD
	Inductor	L_VVIO	1 μH	Range ± 30% DCR maximum = 100 mΩ
VRUSB_3V	Capacitor	C_VUSB.3P1	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 300 mΩ	Figure 5-1Figure 5-48
VRUSB_1V5	Capacitor	C_{VINTUSB1P5.OUT}	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1Figure 5-48
VRUSB_1V8	Capacitor	C_{VINTUSB1P8.OUT}	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1Figure 5-48
VDAC	Capacitor	C_VDAC.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VDAC	Capacitor	C_VDAC.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VPLLA3R	Capacitor	C_VPLLA3R.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VPLL1	Capacitor	C_VPLL1.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VPLL2/VDSI.CSI	Capacitor	C_VPLL2.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VMMC1	Capacitor	C_VMMC1.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VMMC1	Capacitor	C_VMMC1.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VMMC2	Capacitor	C_VMMC2.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VMMC2	Capacitor	C_VMMC2.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VSIM	Capacitor	C_VSIM.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX12S	Capacitor	C_VAUX12S.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX1	Capacitor	C_VAUX1.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX2	Capacitor	C_VAUX2.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX3	Capacitor	C_VAUX3.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX4	Capacitor	C_VAUX4.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VAUX4	Capacitor	C_VAUX4.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VINT	Capacitor	C_VINT.IN	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VINTANA1	Capacitor	C_VINTANA1.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VINTANA2	Capacitor	C_VINTANA2.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VINTDIG	Capacitor	C_VINTDIG.OUT	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-1
VBAT.USB	Capacitor	C_VBAT.USB	1 μF	Range: 0.3 to 2.7 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ	Figure 5-48
USB CP	Capacitor	C_VBUS.FC	2.2 μF ±40%	ESR maximum = 20 mΩ	Figure 5-48
	Capacitor	C_VBUS.IN	10 μF
	Capacitor	C_VBUS	4.7 μF ±40%	ESR maximum = 20 mΩ
MCPC
	Capacitor	C_TXAF	0.1 μF		Figure 5-48
	Capacitor	C_RXAF	1 μF
	Resistor	R_RTSO	22 Ω/100 Ω
	Diode	D_CTSI1		NNCD5.6J
	Diode	D_CTSI2		NNCD5.6J
	Diode	D_RTSO1		NNCD5.6J
	Diode	D_RTSO2		NNCD5.6J
32.768 kHz
	Capacitor	C_XIN	10 pF	Range: 9 to 12.5 pF	Figure 5-65
	Capacitor	C_XOUT	10 pF
	Quartz	X_32.768kHz	32.768 kHz	±30 ppm (at 25°C) ±200 ppm (–40°C to 85°C)
Audio
Earpiece	Capacitor	C_EAR	100 pF		Figure 5-15
8-Ω hands-free right	Ferrite bead	L_HFR.M		NEC: N2012ZPS121	Figure 5-17
	Ferrite bead	L_HFR.P		NEC: N2012ZPS121
	Capacitor	C_HFR	1 μF
	Capacitor	C_HFR.M	1 nF
	Capacitor	C_HFR.P	1 nF
8-Ω hands-free left	Ferrite bead	L_HFL.M		NEC: N2012ZPS121	Figure 5-17
	Ferrite bead	L_HFL.P		NEC: N2012ZPS121
	Capacitor	C_HFL	1 μF
	Capacitor	C_HFL.M	1 nF
	Capacitor	C_HFL.P	1 nF
Headset left	Capacitor	C_S	22 μF/47 μF		Figure 5-19 through Figure 5-22
	Resistor	R_S	0 to 33 Ω
	Capacitor	C_I	47 pF
Headset right	Capacitor	C_S	22 μF/47 μF		Figure 5-19 through Figure 5-22
	Resistor	R_S	0 to 33 Ω
	Capacitor	C_I	47 pF
Headset microphone	Capacitor	C_HM.M	100 nF		Figure 5-19 through Figure 5-22
	Capacitor	C_HM.P	100 nF
	Capacitor	C_HM.O	47 pF
	Resistor	R_B + R_SB	2.2 kΩ/2.7 kΩ
	Capacitor	C_B	0 to 200 pF	If greater than 200 pF, a serial resistor is required for bias stability.
External class-D predriver left	Capacitor	C_PL.O	50 pF		Figure 5-24
	Capacitor	C_PL	1 μF
	Resistor	R_PL	>15 kΩ
	Resistor	R_PL.M	>15 kΩ
	Resistor	R_PL.O	10 kΩ
	Capacitor	C_PL.M	1 μF
External class-D predriver right	Capacitor	C_PR.O	50 pF		Figure 5-24
	Capacitor	C_PR	1 μF
	Resistor	R_PR	>15 kΩ
	Resistor	R_PR.M	>15 kΩ
	Resistor	R_PR.O	10 kΩ
	Capacitor	C_PR.M	1 μF
Vibrator H-bridge	Ferrite bead	L_V.M		BLM18BD221S1N	Figure 5-25
	Ferrite bead	L_V.P		BLM18BD221S1N
	Capacitor	C_V.V	1 μF
	Capacitor	C_V.M	1 nF
	Capacitor	C_V.P	1 nF
Main microphone (pseudodifferential mode)	Capacitor	C_MM.M	100 nF		Figure 5-32
	Capacitor	C_MM.P	100 nF
	Capacitor	C_MM.O	47 pF
	Resistor	R_MM.O	~500 Ω
	Resistor	R_MM.MP	~1.7 kΩ
	Capacitor	C_MM.B	0 to 200 pF	If greater than 200 pF, a serial resistor is required for bias stability.
Submicrophone (pseudodifferential mode)	Capacitor	C_MS.M	100 nF		Figure 5-32
	Capacitor	C_MS.P	100 nF
	Capacitor	C_MS.O	47 pF
	Resistor	R_MS.O	~500 Ω
	Resistor	R_MS.MP	~1.7 kΩ
	Capacitor	C_MS.B	0 to 200 pF	If greater than 200 pF, a serial resistor is required for bias stability.
Main microphone (differential mode)	Capacitor	C_MM.M	100 nF		Figure 5-33
	Capacitor	C_MM.P	100 nF
	Capacitor	C_MM.PM	47 pF
	Capacitor	C_MM.O	47 pF
	Capacitor	C_MM.GM	47 pF
	Capacitor	C_MM.GP	47 pF
	Resistor	R_MM.BP	1 kΩ
	Resistor	R_MM.GM	1 kΩ
	Capacitor	C_MM.B	0 to 200 pF	If greater than 200 pF, a serial resistor is required for bias stability.
Submicrophone (differential mode)	Capacitor	C_MS.M	100 nF		Figure 5-33
	Capacitor	C_MS.P	100 nF
	Capacitor	C_MS.PM	47 pF
	Capacitor	C_MS.O	47 pF
	Capacitor	C_MS.GM	47 pF
	Capacitor	C_MS.GP	47 pF
	Resistor	R_MS.BP	1 kΩ
	Resistor	R_MS.GM	1 kΩ
	Capacitor	C_MS.B	0 to 200 pF	If greater than 200 pF, a serial resistor is required for bias stability.
VMIC1	Capacitor	C_VMIC1.OUT	1 μF	Range: 0.3 to 3.3 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ
VMIC2	Capacitor	C_VMIC2.OUT	1 μF	Range: 0.3 to 3.3 μF ESR minimum = 20 mΩ ESR maximum = 600 mΩ
Silicon microphone	Capacitor	C_SM	1 μF		Figure 5-36
	Capacitor	C_SM.P	100 nF
	Capacitor	C_SM.M	100 nF
	Capacitor	C_SM.PG	47 nF
	Resistor	R_SM	>500 Ω
Auxiliary left	Capacitor	C_AUXL	100 nF		Figure 5-37
Auxiliary left	Capacitor	C_AUXL.M	47 pF
Auxiliary right	Capacitor	C_AUXR	100 nF
Auxiliary right	Capacitor	C_AUXR.M	47 pF
LED Driver
	Resistor	R_LED.A	120 Ω	Requirerd for each LED	Figure 5-59
	Resistor	R_LED.B	160 kΩ	Requirerd for each LED	Figure 5-59
Battery Charger
ICTLAC1	Capacitor	C_COMPAC	100 nF		Figure 5-54Figure 5-55
	Resistor	R_SCOMPAC	51 Ω		Figure 5-54Figure 5-55
	FET	T_AC	FDJ1027P	Fairchild	Figure 5-54Figure 5-55
	Resistor	R_LimitAC	700 kΩ		Figure 5-54Figure 5-55
	FET	T₃	FDY100PZ		Figure 5-55
	Capacitor	C₃	1 nF		Figure 5-55
	Resistor	R₃	100 kΩ		Figure 5-55
ICTLUSB1	Capacitor	C_COMPUSB	100 nF		Figure 5-54
	Resistor	R_SCOMPUSB	51 Ω
	FET	T_USB	FDJ1027P	Fairchild
	Resistor	R_LimitUSB	500 kΩ
VPRECH	Capacitor	C_PRECH	1 μF		Figure 5-54
VCCS	Resistor	R_S	220 mΩ		Figure 5-54
BCI AUTO	Resistor	R_BCI.AUTO	<10 kΩ >140 kΩ	For more information, see Table 5-71.	Figure 5-56
VBAT	Capacitor	C_CV	80 μF		Figure 5-54
I²C Bus—External Pullup
I²C SmartReflex	Resistor	R_PSR.SDA	Pullups for various bus capacitances (C_L) and I²C speeds (standard, fast, and HS) If C_L = 10 pF: Standard = 118 kΩ, Fast = 35.4 kΩ, HS = 4.7 kΩ If C_L = 12 pF: Standard = 98.3 kΩ, Fast = 29.5 kΩ, HS = 3.9 kΩ If C_L = 50 pF: Standard = 23.6 kΩ, Fast = 7.1 kΩ, HS = 940 Ω If C_L = 100 pF: Standard = 11.8 kΩ, Fast = 3.54 kΩ, HS = 470 Ω If C_L ≤ 12 pF, there is no need for an external pullup; the internal 3-kΩ pullup can be used. If an external pullup is used, disable the internal 3-kΩ pullup (reference the GPPUPDCTR1 register; see the TRM).		Section 4.7.3
I²C SmartReflex	Resistor	R_PSR.SCL
I²C control	Resistor	R
I²C control	Resistor	R_CNTL.SCL