SLUSC05D July   2014  – May 2016 UCC28880

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical CharacteristicsTypical Characteristics graphs 1 through 7.
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Startup Operation
      2. 7.4.2 Feedback and Voltage Control Loop
      3. 7.4.3 PWM Controller
      4. 7.4.4 Current Limit
      5. 7.4.5 Inductor Current Runaway Protection
      6. 7.4.6 Thermal Shutdown Over-Temperature Protection section to Thermal Shutdown section.
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 12-V, 100-mA Low-Side Buck Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design with WEBENCH Tools
          2. 8.2.1.2.2 Input Stage (RF, D2, D3, C1, C2, L2)
          3. 8.2.1.2.3 Regulator Capacitor (CVDD)
          4. 8.2.1.2.4 Freewheeling Diode (D1)Freewheeling Diode (D1) section.
          5. 8.2.1.2.5 Output Capacitor (CL)
          6. 8.2.1.2.6 Load Resistor (RL)
          7. 8.2.1.2.7 Inductor (L1)
          8. 8.2.1.2.8 Feedback Path (Q1, RFB1, RFB2)
        3. 8.2.1.3 Application Curves
      2. 8.2.2 12-V, 100-mA, High-Side Buck Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Introduction
          2. 8.2.2.2.2 Feedback Path (CFB, RFB1 and RFB2) and Load Resistor (RL)
        3. 8.2.2.3 Application Curves
      3. 8.2.3 Additional UCC28880 Application Topologies
        1. 8.2.3.1 Low-Side Buck and LED Driver - Direct Feedback (Level Shifted)
        2. 8.2.3.2 12-V, 100-mA High-Side Buck Converter
        3. 8.2.3.3 Non-Isolated, Low-Side Buck-Boost Converter
        4. 8.2.3.4 Non-Isolated, High-Side Buck-Boost Converter
        5. 8.2.3.5 Non-Isolated Flyback Converter
        6. 8.2.3.6 Isolated Flyback Converter
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines Layout Guidelines section.
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Custom Design with WEBENCH Tools
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)(5)
MIN MAX UNIT
HVIN –0.3 700 (3) V
DRAIN Internally clamped 700(3) V
IDRAIN Positive drain current single pulse, pulse max duration 25 μs 320(6) mA
IDRAIN Negative drain current –320 mA
FB –0.3 6 V
VDD VDD is supplied from low impedance source –0.3 6 V
IVDD VDD is supplied from high impedance source 400 µA
TJ(4) Junction temperature 150 °C
Lead temperature 1.6 mm (1/16 inch) from case 10 seconds 260 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. These ratings apply over the operating ambient temperature ranges unless otherwise noted.
(3) TA = 25°C
(4) The thermal shutdown threshold can be beyond the absolute maximum rating of the junction temperature. Thermal shut down is designed to prevent thermal run away that could result in catastrophic failure. Prolonged operation above recommended maximum junction temperature can impact device life time
(5) The device is not rated to withstand operating conditions when multiple parameters are at or near, absolute maximum ratings.
(6) The MOSFET drain to source voltage is less than 400V

6.2 ESD Ratings

UNIT
V(ESD) Electrostatic discharge Human Body Model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins except HVIN pin(1) ±2000 V
Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001, HVIN pin (1) ±1500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VVDD Voltage On VDD pin 5 V
VFB Voltage on FB pin –0.2 5 V
TA Operating ambient temperature –40 105 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) UCC28880 UNIT
D (SOIC)
7 PINS
RθJA Junction-to-ambient thermal resistance 134.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.6 °C/W
RθJB Junction-to-board thermal resistance 85 °C/W
ψJT Junction-to-top characterization parameter 6.4 °C/W
ψJB Junction-to-board characterization parameter 76 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VHVIN = 30 V, TA = TJ = –40°C to +125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VHVIN(min) Minimum Voltage to startup 30 V
INL Internal supply current, no load FB = 1.25 V (> VFB_TH) 58 100 µA
IFL Internal supply current, full load FB = 0.75 V (> VFB_TH) 72 120 µA
ICH0 Charging VDD Cap current VVDD = 0 V, –3.8 –1.6 –0.4 mA
ICH1 Charging VDD Cap current VVDD = 4.4V, VFB = 1.25 V –3.4 –1.3 –0.25 mA
VVDD Internally regulated low Voltage supply (supplied from HVIN pin) 4.5 5 5.5 V
VFB_TH FB pin reference threshold 0.94 1.02 1.1 V
VVDD(on) VDD turn-on threshold VDD low-to-high 3.55 3.92 4.28 V
ΔVVDD(uvlo) VDDON - VDD turn-off threshold VDD high-to-low 0.28 0.33 0.38 V
DMAX Maximum Duty Cycle FB = 0.75 V 45% 55%
ILIMIT Current Limit Static, TA = –40°C 300 mA
Static, TA = 25°C 170 210 260 mA
Static, TA = 125°C 140 mA
TJ(stop) Thermal Shutdown Temperature Internal junction temperature 150 °C
TJ(hyst) Thermal Shutdown Hysteresis Internal junction temperature 50 °C
BV Power MOSFET Breakdown Voltage TJ = 25°C 700 V
RDS(on) Power MOSFET On-Resistance (includes internal sense-resistor) ID = 30 mA, TJ = 25°C 32 40 Ω
ID = 30 mA, TJ = 125°C 55 68 Ω
DRAIN_ILEAKAGE Power MOSFET off state leakage current VDRAIN = 700V, TJ = 25°C 5 µA
VDRAIN = 400 V, TJ = 125°C 20 µA
HVIN_IOFF HVIN off state current VHVIN = 700 V, TJ = 25°C, VVDD = 5.8 V 4 7.5 36 µA
VHVIN = 400 V, TJ = 125°C, VVDD = 5.8 V 20 µA
VVDD(clamp) VDD clamp voltage IVDD = 250 µA 6 6.7 7.5 V

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
fSW(max) Maximum switching frequency 52 62 75 kHz
tON_MAX Maximum switch on time (current limiter not triggered), FB = 0.75 V 6.5 8.1 9.7 µs
tOFF_MIN Minimum switch off time follows every tON time, FB = 0.75 V 6.5 8.1 9.7 µs
tMIN Minimum on time 0.17 0.22 0.30 µs
tOFF(ovl) Max off time (OL condition), tOFF(ovl) = tSW – tON(max) 130 200 270 µs
ton_TO Inductor current run away protection time threshold 500 ns

6.7 Typical Characteristics

UCC28880 D101_SLUSC05.gif
A.
Figure 1. ILIMIT vs Temperature
UCC28880 D103_SLUSC05.gif
Figure 3. INL and IFL vs Temperature
UCC28880 D105_SLUSC05.gif
Figure 5. VVDD(on) and ΔVUVLO vs Temperature
UCC28880 D107_SLUSC05.gif
Figure 7. Maximum Switching Frequency vs Temperature
UCC28880 D008_SLUSC05.gif
Figure 9. tON(max) and tOFF(min) vs Temperature
UCC28880 D201_SLUSC05.gif
Figure 11. RTHJA vs Copper Area
UCC28880 D102_SLUSC05.gif
A.
Figure 2. ILIMIT vs Drain Current Slope
UCC28880 D104_SLUSC05.gif
Figure 4. ICH0 and ICH1 vs Temperature
UCC28880 D106_SLUSC05.gif
Figure 6. IDS vs VDS at 25°C and 125°C
UCC28880 D005_SLUSC05.gif
Figure 8. VFB_TH vs Temperature
UCC28880 D014_SLUSC05.gif
Figure 10. (LMIN/VIN )MIN vs Temperature