SBOS472B March   2009  – June 2016 INA148-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics Dual Supply
    6. 6.6 Electrical Characteristics Single Supply
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Gain Equation
      3. 7.3.3 Common-Mode Range
      4. 7.3.4 Offset Trim
      5. 7.3.5 Input Impedance
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Battery Monitor Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Quasi-AC-Coupled Differential Amplifier
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 Single-Supply Differential Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 AC-Coupled Difference Amplifier
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 50-mV Current-Shunt Amplifier With ±200-V Common-Mode Voltage Range
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • D|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
    • Device MM ESD Classification Level M2
  • High Common-Mode Voltage
    • 75 V at VS = 5 V
    • ±200 V at VS = ±15 V
  • Fixed Differential Gain = 1 V/V
  • Low Quiescent Current: 260 µA
  • Wide Supply Range
    • Single Supply: 2.7 V to 36 V
    • Dual Supplies: ±1.35 V to ±18 V
  • Low Gain Error: 0.075% (Maximum)
  • Low Nonlinearity: 0.002% (Maximum)
  • High CMR: 86 dB
  • Surface-Mount 8-pin SOIC Package

2 Applications

  • HEV/EV and Powertrain
  • HEV Battery Management
  • Automotive Instrumentation
  • Current-Shunt Measurements
  • Differential Sensor Amplifiers
  • Line Receivers
  • Battery-Powered Systems
  • Stacked-Cell Monitors

3 Description

The INA148-Q1 is a precision, low-power, unity-gain difference amplifier with a high common-mode input voltage range. The device consists of a monolithic, precision, bipolar operational amplifier with a thin-film resistor network.

The on-chip resistors are laser trimmed for an accurate 1-V/V differential gain and high common-mode rejection. Excellent temperature tracking of the resistor network maintains high gain accuracy and common-mode rejection over temperature. The INA148-Q1 operates on single or dual supplies. These features make the INA148-Q1 suitable for HEV/EV and Powertrain applications, specifically in battery management systems.

The INA148-Q1 is available in an 8-pin SOIC, surface-mount package, and is specified for operation over the temperature range of –40°C to 125°C.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
INA148-Q1 SOIC (8) 3.91 mm × 4.90 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

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Input Common-Mode Voltage vs Output Voltage

INA148-Q1 D001_sbos472.gif