OPA4314 4 回路、3MHz、低消費電力、低ノイズ、RRI/O、1.8V CMOS オペ・アンプ | TIJ.co.jp

OPA4314
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4 回路、3MHz、低消費電力、低ノイズ、RRI/O、1.8V CMOS オペ・アンプ

4 回路、3MHz、低消費電力、低ノイズ、RRI/O、1.8V CMOS オペ・アンプ - OPA4314
データシート
OPAx314 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier データシート   （英語）
 

概要

The OPA314 family of single-, dual-, and quad-channel operational amplifiers represents a new generation of low-power, general-purpose CMOS amplifiers. Rail-to-rail input and output swings, low quiescent current (150 µA typically at 5 VS) combined with a wide bandwidth of 3 MHz, and very low noise (14 nV/√Hz at 1 kHz) make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The low input bias current supports applications with MΩ source impedances.

The robust design of the OPA314 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the full extended temperature range of –40°C to 125°C.

The OPA314 (single) is available in both SC70-5 and SOT23-5 packages. The OPA2314 (dual) is offered in SO-8, MSOP-8, and DFN-8 packages. The quad-channel OPA4314 is offered in a TSSOP-14 package.

特長

  • Low IQ: 150 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 14 nV/√Hz at 1 kHz
  • Gain Bandwidth: 3 MHz
  • Low Input Bias Current: 0.2 pA
  • Low Offset Voltage: 0.5 mV
  • Unity-Gain Stable
  • Internal RF/EMI Filter
  • Extended Temperature Range:
    –40°C to 125°C

機能一覧

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Part number オーダー・オプション Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
OPA4314 ご注文 4     1.8     5.5     3     1.5     In
Out    		 2.5     0.15     14     Catalog     -40 to 125     TSSOP | 14     14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)     1     EMI Hardened     10     80     20     CMOS    
OPA2314 ご注文 2     1.8     5.5     3     1.5     In
Out    		 2.5     0.15     14     Catalog     -40 to 125     SOIC | 8
SON | 8
VSSOP | 8    		 8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8SON: 9 mm2: 3 x 3 (SON | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    		 1     EMI Hardened
Small Size    		 10     80     20     CMOS    
OPA314 ご注文 1     1.8     5.5     3     1.5     In
Out    		 2.5     0.15     14     Catalog     -40 to 125     SC70 | 5
SOT-23 | 5    		 5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)
5SOT-23: 5 mm2: 1.6 x 2.9 (SOT-23 | 5)    		 1     EMI Hardened     10     80     20     CMOS    
TLV2774 ご注文 4     2.5     5.5     5.1     10.5     In to V-
Out    		 2.5     1     17     Catalog     -40 to 125
0 to 70    		 PDIP | 14
SOIC | 14
TSSOP | 14    		 14PDIP: 181 mm2: 9.4 x 19.3 (PDIP | 14)
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)
14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)    		 2         60     96     40     CMOS